Bodo's News

Read through my personal pick of news around people, our industry, important events and interesting product releases. Or click on a filter and pick your area of interest!

 

Strategic Agreement for Critical Metals Recovery
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Learn more:
indium.com
  • Industry News
  • 2026-04-03

Indium Corporation® has executed a long-term offtake framework agreement with Flash Metals USA Inc., a wholly owned subsidiary of Metallium Limited (MTM), for the supply of critical metals recovered using Metallium’s Flash Joule Heating technology. Under the agreement, Indium will purchase metals recovered from secondary raw materials and electronic scrap through Flash Metals USA’s recycling operations, including gallium, germanium, copper, tin, gold, and indium. The agreement, with an initial term of 10 years with automatic five-year renewal options, establishes a robust and diversified supply chain for U.S.-based recovery of strategic metals. Indium Corporation operates its own metals and compounds reclaim and recycle program that provides specialized recycling services for the electronics, semiconductor, display, battery, and other specialty material industries.

100 V Integrated GaN Power Stages
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Learn more:
epc-co.com
  • Product Release
  • 2026-04-02

Efficient Power Conversion (EPC) has introduced its next generation of 100 V integrated GaN power-stage ICs – EPC23108, EPC23109, EPC23110 and EPC23111 – targeting high-performance motion and power systems such as humanoid robots, drones, and other compact battery-powered platforms. The devices are designed to simplify implementation and improve operational robustness in real-world environments while preserving the efficiency and power-density advantages typical of integrated GaN technology. Each IC integrates the high-side and low-side eGaN® FETs together with the gate driver and level shifting circuitry in a thermally enhanced QFN package. They support operation up to 100 V, with load current capability of 35 A (EPC23108, EPC23109) and 20 A (EPC23110, EPC23111), enabling reliable high-frequency switching performance. The control interface has an active-low fast-shutdown and standby input with a built-in 65 kΩ pull-up, which makes it work with industrial logic standards. As a result, designers can connect the devices directly to standard controllers without having to do any extra signal conditioning. This makes the design easier and makes sure that the devices work the same way on all platforms. Operational safety is improved through deterministic shutdown behavior. When standby is asserted, PWM switching stops immediately and the driver enters a low-quiescent-current state from the VDRV supply. If the driver supply is lost, an active gate pull-down ensures both the high-side and low-side FETs remain off, maintaining system control during fault conditions and enhancing reliability. The family also supports continuous 100% duty-cycle operation, which is necessary for full-torque and uninterrupted conduction modes.

Measurement Day Nuremberg
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Learn more:
datatec.eu
  • Event News
  • 2026-04-02

Experience an exclusive day dedicated to power and high-end measurement technology on April 22, 2026, in Nuremberg at the Max Morlock Stadium. The event features practice-oriented technical presentations, direct exchange with experts, and a tabletop exhibition.

Prototyping Controller for Wide-Bandgap Power Converters
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Learn more:
imperix.com
  • Product Release
  • 2026-04-02

Imperix introduced the B-Box 4, a Rapid Control Prototyping (RCP) system for power electronics. Featuring a proprietary architecture optimized for low-latency operation, the controller delivers advanced control loop speeds and signal fidelity. The device aims to accelerate experimental prototyping activities in both industrial and academic research environments. The B-Box 4 enables 20 MSamples/s synchronous sampling at all analog inputs simultaneously. This captures the full high-frequency content of current ripple or medium-frequency waveforms, and it permits the direct visualization of waveforms without extra instrumentation. Using oversampling, the B-Box 4 is not only a control system but also a monitoring and debugging tool, usable directly from the readily available measurements. It provides a PWM resolution of 250 ps, which is useful for ultra-fast switching applications, especially for techniques relying on phase shift control such as within medium-frequency converters. B-Box 4 can execute the control loop of simple systems in under 2 μs, directly from the CPU. The device is fully integrated into an ecosystem of products designed to accelerate prototyping in power electronics.

GaN Half-Bridge Drivers provide smart Protection
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Learn more:
st.com
  • Product Release
  • 2026-04-01

STMicroelectronics has announced two half-bridge gate drivers that bring gallium-nitride (GaN) efficiency, thermal performance, and miniaturization to power and motion-control applications. The STDRIVEG212 and STDRIVEG612 deliver tightly controlled 5 V gate-drive signals to enhanced-mode GaN HEMTs, powered from a high-side voltage up to 220 V or 600 V respectively. The drivers contain high-side and low-side 5 V linear regulators (LDOs), a high-side bootstrap diode, and protection including under-voltage lock-out (UVLO) in a QFN package. An integrated fast-startup voltage regulator stabilizes the supply voltage for the driver output stage, enabling consistent gate control, while an embedded comparator turns off both GaNs on detecting overcurrent. Smart shutdown (SmartSD) automatically holds the switches off long enough to cool down and a fault pin provides overcurrent, overtemperature and UVLO reporting. The propagation delay of 50 ns is matched between high side and low side, with high-side start-up time of 5 μs and ±200 V/ns dV/dt transient immunity, permitting high rotational speeds. The integrated LDOs have high current capability and provide separate sink and source paths, sinking up to 1.8 A / 1.2 Ω, and sourcing 0.8 A / 4.0 Ω. With 20V-tolerant logic inputs and a dedicated shutdown pin the STDRIVEG212 and STDRIVEG612 are able to save power during inactive periods. The EVLSTDRIVEG212 evaluation board is suitable for both devices.

AI-ready UPS Systems Validation
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Learn more:
tmi.yokogawa.com
  • Industry News
  • 2026-04-01

Unlike traditional workloads with slow and predictable power variations, modern AI creates "pulsed loads", where processors switch rapidly between idle and full capacity. Power demand can swing from 0 % to 100 % and back in milliseconds, creating erratic "on-off" cycles that place power infrastructure under severe stress. Uninterruptible power supply (UPS) systems must now also function as a dynamic power conditioner capable of reacting to these variable load swings in real time. If it cannot manage these pulses effectively, they can be reflected back to the grid or backup generators, threatening overall system stability or even breakdown. Vertiv provides critical infrastructure technologies, including large power converters. Its Power Center in Bologna/Italy needed to validate new Input Power Smoothing algorithms for its Vertiv™ Trinergy™ UPS systems. These intelligently draw energy from the UPS batteries during peak pulses, shielding the upstream generator from the erratic behavior of an AI load. Veritiv created a fully integrated measurement ecosystem from Yokogawa, anchored by the WT5000 Precision Power Analyzer, DL950 ScopeCorder, GM10 Data Acquisition System, and tied together by the IS8000 software platform. This configuration allows measuring currents of up to 5000 A, where the WT5000 Precision Power Analyzer provides primary power analysis. The DL950 ScopeCorder captures the transient behavior of the "pulsed loads" using its 16 channels. Connecting these domains is Yokogawa’s IS8000 software, which synchronizes the instruments using the IEEE 1588 Precision Time Protocol (PTP).

Heat Sinks for Power Electronics and IC Components
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Learn more:
we-online.com
  • Product Release
  • 2026-03-31

Würth Elektronik launches a comprehensive heat sink portfolio, divided into three specialized product groups: The WE-HTO heat sinks are designed for THT-TO packages like the TO-220 and TO-247. WE-HIC includes classic finned heat sinks for components with flat surfaces, such as CPUs or DC/DC converters. The WE-HTOI and WE-HICI variants are supplied from the factory pre-coated with thermal interface material. This eliminates the air gap between the component and the heat sink, thus maximizing cooling performance. As a special service, Würth Elektronik provides technical support, detailed heat-sink characteristics, simulation options, as well as customer-specific modifications. The WE-HTO heat sinks are available in various shapes and with different surface structures to enable tailored cooling performance. These include variants with curved sheet metal and with cooling fins, which dissipate more heat through their increased surface area. In addition, matching M3 screws, nuts, and insulating sleeves for mounting on the WE-HTO and WE-HTOI heat sinks can also be ordered. WE-HIC is available in two variants: with continuous and interrupted fins. The design with continuous fins is designed for applications in which the airflow is aligned with the fins. The variant with interrupted fins, however, is well suited when airflow in the installation environment cannot be clearly defined. Heat sinks for ICs are available in sizes ranging from 20 × 20 to 40 × 40 mm².

High-Voltage Hardware-Based E-Fuse Reference Design
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Learn more:
microchip.com
  • Product Release
  • 2026-03-30

Microchip offers a fully hardware-based e-fuse reference design, which is optimized for high-voltage bidirectional applications, eliminating the need for an onboard microcontroller. Designed for both AC and DC systems, it supports 400 V DC and 800 V DC configurations and features bidirectional current blocking using mSiC® MOSFETs. Protection is built in, with configurable current trip profiles for rapid-fault response. Its modular architecture separates the control and power boards. The power board utilizes high-performance 700 V or 1200 V mSiC MOSFETs, while the control board includes a suite of discrete components for precise monitoring and protection. Thermal management is optimized with SiC devices in the D2PAK-7L XL package for efficient heat dissipation. With overload (1 ms shutdown) and short-circuit protection (1 μs shutdown), resettable operation and an ambient operating temperature range from -40 °C to +85 °C, this reference design is suited for applications such as battery disconnect units (BDU), on-board chargers (OBC), DC/DC converters, cabin heaters and AC compressor inverters.

2000 V / 40 A 4-Phase Boost Module
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Learn more:
inventchip.com
  • Product Release
  • 2026-03-30

Inventchip Technology introduced the IV3B20023BA2, 2000 V 4-phase boosts in a 3B module package. Each phase consists of a 2000 V 23 mΩ SiC MOSFET and a 40 A diode connected in a boost converter topology. The product is aiming 1500 V solar photovoltaic (PV) system applications. The four boost phases are divided into two electrically isolated groups. Each group has two boosts with a common power ground and a separate boost output, plus an NTC for DBC temperature sensing. With such a topology arrangement, the module maximizes the flexibility of the circuit configuration for PV systems with a single, two or four DC inputs. The 3B module has the same dimensions as the standard Easy-3B and provides a minimum 10 mm creepage from terminals to terminals and terminals to heatsink. The difference is that the 3B uses a metal base instead of a bare DBC. The metal base allows the module to be screwed on a heatsink with a stable fixing force and avoids the module’s plastic case aging issue which could lead to the reduction or loss of the fixing force during temperature cycling tests or real applications. This 2000 V MOSFET is based on Inventchip’s second generation SiC technology. The co-packed 2000 V SiC diode was designed to carry a surge current over 5 times of its rated DC current. Compared to the flying-cap topology currently used in 1500 V PV systems, the 2000 V boost converter simplifies PV MPPT circuit design e. g. by eliminating external capacitors.

EMV 2026 successfully concluded
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Learn more:
emv.mesago.com
  • Event News
  • 2026-03-26

This year’s Expo in Cologne featured 124 exhibiting companies, covering 4,700 square meters of exhibition space and attracting 2,414 visitors. The event included an extensive training program with 42 lectures and 20 workshops, with a total of 571 participants. Fifty percent of exhibitors and 30 percent of visitors and participants traveled from numerous countries. The event once again combined further education with networking and hands-on experience with the latest product developments and measurement solutions in the field of electromagnetic compatibility. For the first time, the EMV offered its own session comprising three live demonstrations of real measurement setups, sources of interference, coupling mechanisms, and countermeasures. This format particularly met the needs of developers, test engineers and users with strong practical experience. The next EMV will take place in Stuttgart from 27 to 29 April 2027.

TLVR Quad-Phase Module exceeding 2 A/mm²
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Learn more:
infineon.com
  • Product Release
  • 2026-03-26

Infineon Technologies announced a high-current-density quad-phase power module with TLVR (trans-inductor voltage regulator) inductors. The TDM24745T is an OptiMOS™ quad-phase power module designed to meet the rapidly growing power requirements of next-generation AI accelerators. Integrating four power stages, a TLVR inductor and decoupling capacitors into a 9 x 10 x 5 mm³ package. The module delivers a current density exceeding 2 A/mm². The TLVR architecture can reduce the required output capacitance by up to 50 percent. TDM24745T offers up to 320 A peak current capability. The TDM24745T power module integrates directly into Infineon’s end-to-end AI server power delivery ecosystem, which spans everything from the grid interface to the core processor rails.

Materials Trends for EV Li-ion Cells: Market and Technology
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Learn more:
idtechex.com
  • Industry News
  • 2026-03-26

IDTechEx’s market report "Materials for Electric Vehicle Battery Cells and Packs 2026-2036: Technologies, Markets, Forecasts" explores the materials that act as the foundation for the EV battery cell market and predicts that the overall cell material market for electric vehicles will reach US$154 billion by 2036. What will be the next steps? Higher percentage silicon anodes are being developed that would significantly improve cell energy density. IDTechEx predicts a shift towards silicon over graphite in premium vehicle anodes towards the end of the next decade. There is significant development of semi-solid and solid-state electrolytes to replace liquid electrolytes and enable use of higher energy density anode materials. This would require polymer, ceramic or oxide-based materials. This is expected to be limited, however, due to challenges with scaling manufacturing. Furthermore, development of LMFP, LMO and LNMO is approaching commercialization, shifting the cathode materials market away from cobalt and towards low-cost manganese. Lithium anodes enable extremely high energy density, but increases battery degradation and reduces cycle life. A small proportion of the market may shift to lithium by the end of the next decade, reducing graphite demand, especially in an anode-less cell design. Lithium anodes can also be paired with low-cost sulfur cathodes to develop high gravimetric energy density cells. This would entail a reduction in other cathode material intensities, though market share is expected to be very limited in the EV sector.

Entering the World of Discrete Power
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Learn more:
recom-power.com
  • Industry News
  • 2026-03-25

RECOM is rolling out a range of rectifier ICs to allow engineers to build their own discrete DC/DC isolated power supplies. The range includes a fully integrated full-bridge rectifier with smart output-voltage limiting, that occupies less board space than 4 diodes, and a rectification controller IC for use with an external FET, suitable for either high-side or low-side rectification. The RVS002 integrates two N-channel MOSFETs and two Schottky diodes in a DFN2∗2 package to create a low-loss full bridge rectifier capable of handling up to 3 W. A built-in intelligent voltage limiter prevents the output voltage from rising excessively under no load conditions, which increases voltage stability. When the power supply is under load, the limiter remains inactive and does not draw current. The RVSY018 synchronous rectification controller operates at up to 700 kHz, with a 30 ns turn on and 10 ns turn off characteristic, making it suitable for high-frequency power conversion applications. The rectification IC is self-powered from a single AC input allowing either high side or low side rectification. The controller supports both CCM and DCM operation and is compatible with both QR and active clamp flyback topologies. Both rectifier solutions operate over a -40 °C to +125 °C temperature range and are reflow oven solderable.

Power Inductors for Automotive Electronics
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Learn more:
we-online.com
  • Product Release
  • 2026-03-24

With the WE-MXGA inductors Würth Elektronik presents AEC-Q200-certified components qualified for automotive applications. The inductors are well suited for use in lighting, infotainment systems, DC/DC converters (48 V/12 V), battery-management systems, ADAS modules, and LED headlights. The magnetically shielded SMT storage inductor WE-MXGA is particularly targeted towards high-frequency switch-mode power supplies, especially for switching regulators based on the latest GaN and SiC transistor technologies. These power inductors, which are made from pressed nanocrystalline powder core material, are available in two versions, in form factor 4020 with inductances of 0.16 to 4.7 μH and in form factor 5030 with inductances of 0.22 to 15 μH. With a current capability of up to 28 A and an operating voltage up to 80 VDC, the inductor has an operating temperature range from -40 °C up to 125 °C.

Global Distribution Agreement for Silicon Power MOSFETs
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Learn more:
idealsemi.com
  • Industry News
  • 2026-03-24

iDEAL Semiconductor has signed a global distribution agreement with DigiKey, who will stock the semiconductor manufacturer’s products. Under the agreement, DigiKey will distribute iDEAL’s portfolio of silicon MOSFETs. The collaboration provides customers with immediate online access to inventory through DigiKey’s global e-commerce platform. iDEAL Semiconductor’s SuperQ™ technology is designed to enable improved energy efficiency and power density while maintaining the reliability, manufacturability, and cost structure of standard silicon processes. The devices are suited for applications including battery management systems (BMS), motor drives, fast charging, data center power architectures, and other high-performance power conversion systems.

Partnership for SiC-based Solid-State Transformers
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Learn more:
infineon.com
  • Industry News
  • 2026-03-24

Infineon Technologies and DG Matrix, an expert in Solid-State Transformer (SST) solutions, are partnering to enhance the efficiency of power conversion required to connect AI data centers and industrial power applications to the public grid. As part of the collaboration, DG Matrix will source latest-generation silicon carbide (SiC) technology from Infineon for use in its Interport™ multi-port solid-state transformer platform. A solid-state transformer replaces conventional copper and iron-based transformers. It features higher efficiency, significantly greater power density (smaller size and lower weight) and improved scalability. Compared to conventional transformers, SSTs are up to 14 times smaller and 40 times lighter. SSTs enable direct power conversion from the medium-voltage levels supplied by the grid to the low voltages required by applications such as AI data centers, electric vehicle (EV) charging infrastructure, renewable energy systems and industrial microgrids. Infineon expects that the global semiconductor market volume for SSTs could reach up to one billion US dollars in the next five years.

GaN-based BLDC Motor Drive Evaluation Board
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Learn more:
epc-co.com
  • Product Release
  • 2026-03-23

Efficient Power Conversion (EPC) introduced the EPC91121 motor drive inverter evaluation board, built around the Gen-7 EPC2366 40 V eGaN® power transistor. Measuring 79 mm × 80 mm, the EPC91121 is engineered for rapid prototyping of motor drive architectures in applications such as drones, robotics, industrial automation, handheld power tools, and other compact electromechanical systems where high efficiency and power density are critical. The EPC91121 is a complete three-phase inverter solution capable of delivering up to 70 Apeak (50 ARMS) output current from input voltages ranging between 18 V and 30 V, making it well-suited for battery-powered systems operating around a 24 V supply. The board integrates the key functions required for a motor drive inverter, including gate drivers, housekeeping power supplies, voltage and temperature monitoring, and current sensing. High-bandwidth current sensing on all three phases supports measurements up to ±125 A, while phase and DC-bus voltage sensing provide the feedback needed for precise monitoring and motor-control techniques such as field-oriented control (FOC) and space-vector PWM. Additional features include shaft encoder and Hall-sensor interfaces and multiple test points, simplifying system integration, measurement, and debugging during development. At the heart of the design is the 40 V EPC2366 Gen 7 eGaN FET, featuring an on-resistance of 0.84 mΩ, enabling efficient power conversion and fast switching performance. The evaluation platform supports PWM switching frequencies up to 150 kHz, significantly higher than typical silicon-based motor drives. This capability allows engineers to reduce magnetic component size, minimize switching losses, and improve overall system responsiveness.

Power Modules with increased Power Density
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Learn more:
ti.com
  • Product Release
  • 2026-03-23

Texas Instruments (TI) unveiled isolated power modules, helping enable increased power density, efficiency and safety in applications ranging from data centers to electric vehicles (EVs). The UCC34141-Q1 and UCC33420 isolated power modules use TI’s IsoShield™ technology, a proprietary multichip packaging solution that achieves up to three times higher power density than discrete solutions in isolated power designs. The IsoShield technology copackages a planar transformer and an isolated power stage, offering functional, basic and reinforced isolation capabilities. It enables a distributed power architecture, helping manufacturers meet functional safety requirements by avoiding single-point failures. The result is compact packaging while delivering up to 2 W of power, enabling designs for automotive, industrial and data center applications that require reinforced isolation. Evaluation modules, reference designs and simulation models are also available.

Isolation and Power Modules for Oscilloscopes
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Learn more:
tmi.yokogawa.com
  • Product Release
  • 2026-03-23

Yokogawa Test & Measurement introduced the 720252 1 MS/s 16-bit isolation module, featuring wide-range DC offset-adjust capability, and the 720301 power measurement module, delivering adequate DC/AC waveform accuracy. An evolution of the existing 701251, the 720252 covers a wider offset adjustment range than general digital oscilloscopes, enabling precise measurement of even small DC voltages and current changes from batteries or sensors. Its offset adjustment function is capable of cancelling a broad spectrum of DC bias, such as battery voltage, DC voltage, and DC current. The module also enables the simultaneous observation of DC levels and microvoltage fluctuations, as low as 1 mV/div for battery applications. In its Hi Z (>1 GΩ) input impedance mode the 720252 is capable of reducing the loading effect of the input circuit on a battery cell. Providing an all-in-one solution that correlates power consumption and generation with parameters including temperature, strain, acceleration, and sound, the module features one direct voltage input and one current sensor input, integrating with the power analysis functions of the DL950 or SL2000 for high accuracy in measuring DC and AC voltage/current waveforms. These features are supported by a user-defined measurement period for power calculations (from 0.1 ms), cycle-by-cycle power calculations, and trigger functions on power measurement parameters and harmonic orders.

Power Electronics, Machines and Drives Event
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Learn more:
pemd.theiet.org
  • Event News
  • 2026-03-23

PEMD Global 2026 will take place on 13–15 April 2026 in London. The event is renowned for bringing together academics and industry experts to transform research into real world engineering solutions. Join the conference that drives innovation across the electrical and power engineering landscape and be part of the conversations shaping the future of the electrical revolution.

GaN Devices for Flyback Topology up to 440 W
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Learn more:
power.com
  • Product Release
  • 2026-03-23

Power Integrations introduced a flyback solution extending the power range of flyback converters to 440 W, well beyond the limits that traditionally required more complex resonant and LLC topologies. The TOPSwitchGaN™ flyback IC family unites the company’s PowiGaN™ technology with its TOPSwitch™ IC architecture. This solution aims to reduce complexity, eliminate heat sinks in many cases, shorten design time, improve manufacturability and lower total system cost. TOPSwitchGaN ICs provide 92 percent efficiency across the load range, from 10 percent to 100 percent load, and clearly beats ErP regulations at less than 50 mW power consumption for standby and off modes. The device does this without the need for synchronous rectification. PowiGaN switches deliver much lower RDS(ON) than silicon, significantly increasing the power capability of flyback converters. These devices incorporate 800 V PowiGaN switches which can operate at switching frequencies of up to 150 kHz. No-load consumption is well below 50 mW at 230 VAC including line sense, and up to 210 mW of output power is available for 300 mW input at 230 VAC to run housekeeping functions when units are in stand-by mode. These ICs are available in two styles. For ultra-slim designs, low profile eSOP™-12 surface mount packaging enables 135 W (85 – 265 VAC) to be delivered without a heatsink for applications such as appliances. The vertical orientation of the eSIP™-7 package minimizes PCB footprint and has a thermal impedance equivalent to a TO-220-packaged part. Several reference design materials are available.

Half-Bridge 1200 V MOSFET Modules
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Learn more:
semiq.com
  • Product Release
  • 2026-03-23

SemiQ has launched the QSiC™ Dual3, a family of 1200 V half-bridge MOSFET modules for motor drives in data center cooling systems, grid converters in energy storage systems, and industrial drivers. The family enables the creation of power converters and includes an optional parallel Schottky barrier diode to further reduce switching losses in high-temperature environments. Two of the family’s six devices have an RDS(on) of just 1 mΩ and a power density of 240 W/in³ from its 62 x 152 mm package. The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die having been screened using wafer-level gate-oxide burn-in tests exceeding 1,450 V.

600 V Super Junction Power MOSFETs
  • Product Release
  • 2026-03-19

Toshiba Electronics has added the DTMOSVI 600 V HSD (High-Speed Diode) N-channel power MOSFETs to the DTMOSVI 600 V Series featuring a super junction structure. The seven additional products are available in TO-247, TOLL and DFN8×8 packages, providing engineers with options that balance power handling, thermal performance, switching efficiency, and system miniaturization capabilities for diverse application needs. A product highlight is the TK058V60Z5, which achieves an drain-source on-resistance (RDS(ON)) of 50 mΩ (typ.) in a DFN8×8 package. Applications include switched-mode power supplies (SMPS) for data center servers, uninterruptible power supplies (UPS), and photovoltaic power conditioners. These products employ lifetime control technology, which intentionally introduces defects into the diode to enhance carrier recombination speed. This technique enhances the reverse-recovery performance of the body diode, a critical requirement for bridge and inverter circuit applications. Compared to Toshiba’s existing DTMOSVI 600 V series without a built-in high-speed recovery diode, the reverse recovery time (trr) has been reduced by approximately 60 %, and the reverse recovery charge (Qrr) by approximately 85 % (measurement conditions: VDD = 400 V, VGS = 0 V, IDR = 20 A, -diDR/dt= 100 A/μs, Ta = 25 °C). Both G0 SPICE and G2 SPICE models are available as well as an online circuit simulator.

Distributor and Semiconductor Manufacturer cooperate on holistic Design Suite
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Learn more:
digikey.com
  • Industry News
  • 2026-03-19

DigiKey announces the availability of an enhanced eDesignSuite experience, developed through a collaboration with STMicroelectronics (ST) and Ultra Librarian. The tool environment allows engineers to design, simulate, refine and confidently validate their projects using ST components and to purchase their entire bill of materials (BOM) directly from DigiKey in a few steps. The eDesignSuite, developed by ST, is a free, publicly accessible, no-license-required online design platform that provides a unified workflow for power management, signal conditioning, NFC/RFID applications and other design domains. The collaboration with DigiKey and Ultra Librarian expands the platform’s capabilities by tightly integrating component models, simulation flows, BOM management and multi-CAD exports. The eDesignSuite experience now also provides e.g. the following capabilities: Integrated thermal and electrical simulation support through SIMPLIS/SIMetrix, enabling deeper performance verification and design confidence. Real-time BOM refinement with live impact analysis, allowing engineers to immediately see how parameter changes affect design choices and performance. Seamless export of schematics and BOMs to multiple CAD environments, including OrCAD, Altium and Eagle. Application-specific design support, including power management design, thermal-electrical simulation, signal conditioning and NFC/RFID calculators.

Full-Brick 48 V AC/DC Supply with up to 94 % Peak Efficiency
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Learn more:
advancedenergy.com
  • Product Release
  • 2026-03-19

Advanced Energy Industries has extended its range of AIF full-brick board-mounted AC/DC power supplies for telecom and industrial applications with the AIF13WAC, 48 V 600 W, with a peak efficiency of up to 94 %. The AIF13WAC integrates full digital control and monitoring (via PMBus) and active current sharing along with internal inrush limiting functionality. Compared to the previous generation, the AIF13WAC increases output power by 20 % in the same form-factor and therefore is compatible with all accessories created for previous generations, including case-kits, heatsinks and EMI filters. For contact-cooled, fanless applications such as IP-sealed designs, there is now an upgrade path to deliver greater power than the previous generation of 500 W products. The AIF13WAC accepts a input voltage range of 90 to 264 VAC, and delivers a 13 A, 48 VDC nominal output alongside a 10 V (250 mA) auxiliary output. It can run with up to three units in parallel. The input EMI filter, hold-up capacitors, and output capacitors are the only external components required for the realization of a successful application design.

Report on GaN Semiconductor Reliability and Robustness
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Learn more:
epc-co.com
  • Industry News
  • 2026-03-19

Efficient Power Conversion (EPC) has released its Phase 18 Reliability Report, providing insights into eGaN device reliability. The report builds on previous work by closing the gap between lab-generated reliability testing and real-world device performance across mission profiles. It introduces additional methodologies to better predict device lifetime under application-specific stress conditions, shaped through close collaboration with customers and supported by peer-reviewed research and international conference publications. The report emphasizes the significance of comprehending the fundamental wear-out mechanisms in GaN HEMTs and presents a quantitative methodology for estimating the overall device lifetime based on the predominant stress conditions experienced during operation. The methodology allows for more accurate lifetime predictions across a wide range of applications by combining different stress factors, like voltage, current, temperature, and duty cycles. Phase 18 is similar to earlier reports, but it goes much deeper into the main wear-out mechanisms. These include the reliability of gates in pGaN structures, the ability to handle stress and overvoltage (robustness), the maximum current density, and the wear-out of thermomechanical devices in both chip-scale and QFN-packaged formats. The report also looks at reliability in dynamic switching conditions and high-frequency operation, which gives us a better idea of how things work in real life. In addition, the report introduces mission-specific reliability evaluations, including motor drive applications characterized by rapid current transients and varying load conditions. A customized testing methodology is presented to emulate these application-specific stress profiles, demonstrating the robustness of EPC’s GaN technology under such conditions.

Power Modules designed for harsh Environments
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Learn more:
microchip.com
  • Product Release
  • 2026-03-19

Microchip Technology announced its BZPACK mSiC® power modules, designed to meet HV-H3TRB (High Humidity High Voltage High Temperature Reverse Bias) standards. Available in topologies including half-bridge, full-bridge, three-phase and PIM/CIB configurations, they are suited for deployments in industrial and renewable energy applications. BZPACK modules feature a baseplate-less design with Press-Fit, solderless terminals and optional pre-applied Thermal Interface Material (TIM). The MB and MC families of mSiC MOSFETs are targeted towards both industrial and automotive applications, with AEC-Q101 qualified options available. These devices support common gate-source voltages VGS ≥ 15 V and are available in TO-247-4 Notch and die form (waffle pack).

Production Site in Singapore
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Learn more:
wevo-chemie.de
  • Industry News
  • 2026-03-19

Wevo is expanding its presence in the Asia-Pacific region with a production site in Singapore. Located in the Tuas industrial area, the facility will serve as a key hub for supplying customers with locally manufactured polyurethane systems that offer proven solutions across a wide range of industries. This facility will feature identical production processes and quality standards to those of the company’s headquarters in southern Germany. In addition to a fully integrated production line, the building in the Tuas industrial area also offers ample storage and packaging capacity. The start of production is scheduled for the third quarter of 2026. The initial focus will be on the polyurethane portfolio, including polyurethane potting compounds, adhesives and sealants for electronics manufacturing – for instance through dispensing under atmospheric pressure or vacuum. Wevo products protect sensitive components against chemicals, vibration, foreign matter, dust, humidity and high temperatures.

PCIM Europe 2026 puts AI in the Spotlight
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Learn more:
pcim.mesago.com
  • Event News
  • 2026-03-19

From 9 to 11 June 2026, the PCIM Expo & Conference will once again take place in Nuremberg/Germany. With over 650 exhibitors and more than 500 presentations, this power electronics event will offer a comprehensive program for trade visitors. With the new AI & Data Centers Stage, this year’s trade fair and conference program will focus on the topic of artificial intelligence and data centers for the first time. The escalating energy needs of modern data centers are driving demand for high-performance, energy-efficient, and sustainable solutions. With the AI & Data Centers Stage, the PCIM Expo 2026 places a distinct emphasis on two of the most important future trends in power electronics. This stage brings together expert presentations and best practices addressing the growing influence of artificial intelligence and the escalating energy demands of modern data centers. PCIM will cover the entire power electronics value chain, ranging from power semiconductors, test and measurement technologies, and automation solutions to materials for different fields of application, including the aviation industry. Last year the event welcomed 685 exhibiting companies, 16,500 visitors, and more than 800 conference participants from the realms of science and industry.

New Date for PCIM India
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Learn more:
pcim.in
  • Event News
  • 2026-03-18

The PCIM Asia New Delhi Conference has been postponed by one day and will now take place from 10 to 11 December 2026 at the Yashobhoomi Exhibition and Convention Centre (IICC) in New Delhi. This adjustment was made due to organizational conditions and enables the conference to be executed even better. Following its debut last year, the event is returning to India and inviting scientists, industry experts and emerging talent from industry and research to submit abstracts on current topics in power electronics. The call for papers is open until 21 May 2026.

Reference Designs for Three-Phase Inverters based on SiC Power Modules
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Learn more:
rohm.com
  • Product Release
  • 2026-03-17

ROHM has released reference designs named "REF68005", "REF68006", and "REF68004" for three-phase inverter circuits featuring EcoSiC™ brand SiC molded modules "HSDIP20", "DOT-247", and "TRCDRIVE pack™ " on ROHM’s website. Designers can use the data provided in these reference designs to create the drive circuit boards. When combined with ROHM’s SiC modules, these designs help reduce the person-hours required for device evaluation. The designs support output power levels up to the 300 kW class. Three types of SiC modules compatible with these reference designs are already available for purchase through online distributors such as DigiKey and Farnell. Several support resources, including simulation and thermal design support, are available to facilitate quick evaluation and implementation of the products. ROHM’s comprehensive solutions can provide valuable assistance in component selection.

25 V and 80 V MOSFETs meeting AI Server Power Demands
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Learn more:
aosmd.com
  • Product Release
  • 2026-03-17

Alpha and Omega Semiconductor (AOS) introduced its AONC40202 25 V MOSFET and AONC68816 80 V MOSFET that are available in DFN 3.3 × 3.3 double-sided cooling source-down packaging. The devices are designed to support intermediate bus converter (IBC) DC/DC applications in AI Servers. AONC40202 and AONC68816 feature a top-clip design for the exposed drain contact. The packaging technology used in the AONC40402 25 V and AONC68816 80 V MOSFETs features a large top clip, which enables a thermal resistance rate value of Rthc-top(max) to be 0.9 °C/W. The AONC40202 has a continuous current capability of up to 405 A, with a maximum junction temperature of 175 ° C.

DC/DC Converter: Direct Conversion from 800 V to 6 V
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Learn more:
navitassemi.com
  • Product Release
  • 2026-03-16

Navitas Semiconductor announced a DC/DC power delivery board (PDB) powered by GaNFast™ technology, enabling direct conversion from 800 V to 6 V in one power stage. This solution eliminates the traditional 48 V intermediate bus converter (IBC) stage within the compute server trays to support NVIDIA AI infrastructure. This 6 V output architecture is said to improve system performance versus other already released PDBs by cutting the VRM 8Voltage Regulator Modules conversion ratio in half. Navitas’s 800 V–6 V DC/DC PDB targets to deliver up to 96.5% peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in³. Approximately 20 % thinner than a mobile phone, its profile allows for close integration with the GPU board. The primary side employs 16 × 650 V GaNFast FETs in the latest DFN8×8 dual-cooled package, configured in a stacked full-bridge. Center-tapped outputs use 25 V silicon MOSFETs. 1 MHz switching enables the use of small passives and planar magnetics.

Positive Trade Show Echo
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Learn more:
embedded-world.de
  • Event News
  • 2026-03-13

Around 36,000 visitors went to Nuremberg/Germany in order to attend the trade show "embedded world 2026", which took place from 10 to 12 March, 2026. This is a growth of more than 13 percent compared to the previous year. With its range of topics and technical exchanges, the embedded world Conference once again sent a signal about the industry’s strength in 2026. Technical presentations, scientific insights and dialogue between experts were an integral part of the embedded world conference, which is targeted to the developer community. Of course, all these embedded systems need power supplies, and that’s why major power companies showed their solutions in Nuremberg. The next embedded world in Nuremberg will take place from 16 to 18 March 2027.

200 V MOSFETs in Multiple Standard Power Packages
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Learn more:
idealsemi.com
  • Product Release
  • 2026-03-10

iDEAL Semiconductor expanded its SuperQ™ 200V MOSFET portfolio with the iS20M5R5S1T, which is available in the industry-standard TOLL package, and the iS20M6R3S1P, available in the TO-220 package. The iS20M5R5S1T achieves a maximum RDS(on) of just 5.5 mΩ, while the iS20M6R3S1P delivers a maximum RDS(on) of 6.3 mΩ. Versions in D2PAK-7L (iS20M5R5S1H) and TOLT (iS20M5R5S1TC) are also planned. Typical applications are e.g. in next-generation power systems and motor-drive applications as well as switched-mode power supplies (SMPS), secondary-side synchronous rectification, and high-current industrial and battery-powered systems. The VGS(th) is specified with +/- 0.5V.

Strengthening its Electrification Business
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Learn more:
danfoss.com
  • Industry News
  • 2026-03-09

Danfoss has acquired 100% ownership of power electronics leader Semikron Danfoss, moving from a joint venture to fully owned subsidiary of Danfoss enabling Danfoss to accelerate the company’s electrification business. As part of the continued portfolio optimization, Danfoss intends to divest their automotive business. Danfoss announces the acquisition of the remaining shares in Semikron Danfoss, increasing its ownership from 62% to 100% and gaining full ownership of the global leader in power electronics. The acquisition reflects Danfoss’ refocused electrification priorities and is aligned with the execution of the LEAP 2030 strategy. "As part of our strategy, LEAP 2030, we are prioritizing investments in high-value opportunities, such as electrification, within our core businesses. The full acquisition of Semikron Danfoss allows us to fully accelerate our investments in technology leadership, in advanced power modules, and industrial-scale power electronics solutions that create maximum value for our customers," said Kim Fausing, President & CEO of Danfoss. With full ownership, Danfoss moves from a joint setup to full autonomy. This strengthens Danfoss’ ability to serve customers with industrial-scale power electronics solutions and sharpens focus on core businesses including industrial drives, renewables, data centers, energy storage solutions, off-highway and construction as well as commercial on-highway vehicles beyond electric passenger cars.

1500 V Relays for Energy Storage Systems and EV Fast-Chargers
  • Product Release
  • 2026-03-04

OMRON is extending its contactor-replacement relay portfolio with the G9KJ to save weight and cost in high-voltage energy storage systems and electric-vehicle fast chargers. With 25 A make current and 5 A carry (0 A break) current, the PCB-mount relays have ratings optimized for pre-charging circuits at DC-link voltage up to 1500 V. As pre-charge control switches, the OMRON G9KJ relays divert capacitive inrush currents through a high resistance to relieve stress on components handling the main charging current, including the main contactor, DC link capacitor, and trip protection. With a critical role in preventing nuisance faults or unwanted system resets, and enhancing long-term reliability of the power stage, G9KJ relays permit greater board integration and faster assembly than traditional contactors. The 37.2 mm × 25.5 mm × 17 mm type 1A (SPST NO) relays address the growing reliance on high-voltage DC switching capabilities as the energy transition redefines grid infrastructures and life essentials like mobility. The contact resistance is 100 mΩ (max.) while the coil power is specified with 530 mW.

240 W USB-C PD 3.2 Reference Design for Battery-powered Motor Control Applications
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Learn more:
fiveyearsout.com
  • Product Release
  • 2026-03-04

Arrow Electronics and Infineon have announced REF_ARIF240GaN, a 240 W USB Power Delivery (PD) 3.2 reference design for battery-powered motor control applications that require high performance and power efficiency in a compact form factor. This design complements the existing portfolio of joint reference design solutions from Arrow and Infineon, supporting the ongoing migration of customer designs to USB-C technology. REF_ARIF240GaN is specifically designed to support the launch of EZ-PD™ PMG1-B2, Infineon’s latest USB PD 3.2 controller, featuring up to 240 W USB sink capability and integrated buck-boost functionality in a single package. It provides developers with a ready-to-use platform for implementing high-power USB-C charging alongside efficient motor drive control features. It brings fast charging capabilities for 2- to 12-cell Li-ion battery packs, simplifying the overall design and reducing components count. Motor control functionality is delivered using Infineon’s PSOC C3, a 180MHz Arm Cortex-M33 microcontroller, and 100 V CoolGaN™ G5 transistors. Target applications include light electric vehicles (e-bikes, e-scooters and personal mobility devices), along with power tools, vacuum cleaners, kitchen appliances, garden equipment and robotics.

3D Power Electronics Integration Conference
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Learn more:
3d-peim.org
  • Event News
  • 2026-03-04

The 3D-PEIM 2026 conference is focused on 3D power electronics packaging and heterogeneous integration. Sponsored by PSMA and IEEE EPS it will convene researchers, manufacturers, and industry leaders at the Arizona State University Skysong Complex in Phoenix, Arizona, from 16th – 19th November 2026. The event will highlight emerging technologies and manufacturing approaches addressing the performance, reliability, and scalability challenges facing next-generation 3D power electronics heterogeneous integration. The 2026 technical program includes six plenary presentations, seven technical sessions, expert-led tutorials, and poster and industry partner sessions. Topics span the full integration stack, including advanced packaging and 3D integrated modules, thermal management, design modeling and simulation, reliability and failure analysis, power delivery and energy storage, passive components, and materials for advanced packaging. Together, these sessions emphasize both fundamental research and practical implementation for automotive, aerospace, data center, and energy applications. Attendees will be able to participate in guided tours of ASU’s MacroTechnology Works, a manufacturing facility. The site hosts industry-scale capabilities, including a 300 mm Fan-Out Wafer-Level Packaging pilot line. The Call for Papers is now in progress.

Shenzhen Conference focusing on Power Electronics
  • Event News
  • 2026-03-04

The PCIM Asia Shenzhen Conference 2026 will focus on the domain of power electronics applications in artificial intelligence (AI) and data centers, and it will be held from 26 – 28 August 2026 at the Shenzhen World Exhibition and Convention Centre. This event bridges industry, academia and research across the full value chain. Held in conjunction with the exhibition, the conference links technology from the research stage to industrial deployment and has become a principal forum for tracking technical developments and building the cross-sector partnerships that carry technology from the lab to the market. Alongside data center infrastructure, the program also addresses the application of AI technologies in other aspects of the power electronics field, from renewable energy control and power quality monitoring to motor drive optimization and electric vehicle systems. The conference covers all areas of the power electronics field, from foundational research and novel technologies through to industry applications, with sessions to be organized under three thematic tracks: Power electronics core technologies, Innovative applications and system integration as well as AI and data centre energy technologies. The latter track is new for 2026 addressing AI applications across power systems, renewable energy, and electric machines. It focuses on power quality monitoring and electric vehicle systems, reflecting the areas of fastest-growing areas of technological development and industry investment. PCIM Asia Shenzhen is jointly organized by Guangzhou Guangya Messe Frankfurt and Mesago Messe Frankfurt.

Solid-State Relay for High-Current, High-Isolation Applications
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Learn more:
littelfuse.com
  • Product Release
  • 2026-03-03

Littelfuse launched the CPC1343G OptoMOS® Solid-State Relay, a normally open (1-Form-A) OptoMOS relay designed for high-reliability switching in demanding industrial, medical, and instrumentation applications. The device combines 900 mA continuous load current, 60 V blocking voltage, and reinforced 5,000 VRMS input-to-output isolation designed to meet stringent safety and compliance requirements in a space-saving 4-pin package. Fast switching performance - 4 ms turn-on and 1 ms turn-off - enables precise control, while a maximum LED drive current of 3 mA provides compatibility with TTL and CMOS logic without added interface circuitry. The CPC1343G supports an extended ambient temperature range of –40 °C to +105 °C; it operates with a maximum on-resistance of 0.8 Ω. Its solid-state construction eliminates mechanical wear, delivering silent, maintenance-free operation and long-term reliability where electromechanical relays often fall short. The device is offered in both through-hole DIP-4 and surface-mount configurations, simplifying PCB layout and enabling flexible manufacturing options across industrial and medical platforms. The CPC1343G is ideally suited for applications requiring high isolation, fast response, and reliable operation at elevated temperatures, including industrial control systems and automation, medical equipment requiring patient-to-equipment isolation, instrumentation, data acquisition, and multiplexing, automatic test equipment (ATE) as well as utility and smart metering systems.

Strategic Semiconductor Manufacturing Partnership in India
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Learn more:
rohm.com
  • Industry News
  • 2026-03-03

ROHM and Suchi Semicon have established a strategic semiconductor manufacturing partnership in India. By combining ROHM’s device technology expertise with Suchi Semicon’s manufacturing capabilities and operational execution, the companies aim to build a reliable and scalable manufacturing framework aligned with evolving industry needs. The collaboration aims to enhance supply chain resilience and provide customers with trusted manufacturing solutions. Specifically, ROHM is considering the outsourcing of back-end processes for power devices and IC products to Suchi Semicon and has begun technical evaluations toward potential mass production shipments starting in 2026. Through these efforts, ROHM aims to build, in collaboration with Suchi Semicon, an early-stage manufacturing framework in India that aligns with the expected industry ramp-up in the coming years. Furthermore, ROHM and Suchi Semicon will share a roadmap to expand the range of locally manufactured packages.

Full ISO/IEC 17025 Accreditation for AC Calibration Services achieved
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Learn more:
danisense.com
  • Industry News
  • 2026-03-03

The in-house calibration laboratory of Danisense has achieved full ISO/IEC 17025 accreditation for AC calibration services. This follows the laboratory’s ISO/IEC 17025 accreditation for DC current transducer calibration up to 21 kA, obtained in September 2022. This calibration laboratory is now equipped to handle e. g. DC calibration from 1 A to 21 kA as well as AC calibration (53 Hz) from 1 A to 1.2 kA for gain error and phase shift. This capability enables the calibration of a range of current transducers with either current or voltage outputs, supporting applications across power electronics, energy, automotive, rail, and industrial sectors. Danisense’s standard AC calibration report is performed at 10%, 25%, 40%, 55 %, 70 %, 85 % and 100 % of nominal AC current. The DC standard calibration is performed at +/- 10 %, +/- 25 %, +/- 40 %, +/- 55 %, +/- 70 %, +/- 85 %, +/- 100 % of nominal DC current. Results are presented with and without offset, with linearity analysis and statement of conformity (for Danisense transducers only) on all test points. Custom calibration points are also available. The service operates with typical lead times of approximately 10 working days, while accepting and calibrating both Danisense as well as third-party AC and DC current transducers. Customers receive a DANAK-accredited calibration certificate, ensuring that every calibration report fully complies with ISO/IEC 17025 requirements and provides complete confidence in measurement traceability and quality. All calibration services can be booked through the company’s online calibration portal, which provides e. g. with regular online and email updates during the calibration process, calibration reports, detailed order tracking etc.

AC/DC Power Supplies
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Learn more:
pduke.com
  • Product Release
  • 2026-03-01

The TAD150 series AC/DC power supply from P-DUKE is designed for industrial applications, featuring specific switching topology and high-efficiency conversion. It provides 130 W (natural convection) or 150 W (forced air cooling) continuously, with up to 200 W peak power, which makes it well-suited for surge-starting and intermittent high-power applications. The devices comply with IEC/EN/UL 62368-1 safety standards and offer reinforced insulation with a 3000 VAC input-to-output isolation voltage while meeting EN55032 Class B emissions tests and comprehensive EMI/EMS testing. For high-altitude applications, the TAD150 includes an OVC III (2000 m) option. Its temperature range spans from -40 °C to +85 °C. With synchronous rectification technology it achieves efficiencies of 92-94 % and a power factor of 0.95, meeting EN61000-3-2 Class D standards. Its no-load power consumption of 0.2 W complies with energy-saving regulations. Available in Open Type, Enclosed Type, and Din Rail Type, the TAD150 supports several connector options (Molex, JST, Terminal Block) and operates with an input voltage range from 85-264 VAC / 88-370 VDC for global compatibility. The TAD150 includes multiple protections: Overvoltage Protection (110-135 % Vnom), Overload Protection (160 % rated), Short Circuit Protection (Hiccup mode), and Overtemperature Protection (125 °C), while the MTBF is 724,500 hours (MIL-HDBK-217F, 25 °C full load). Typical applications are Programmable Logic Controllers, Motor Drive Systems, Electromagnetic Valve Control, Communication Equipment, Testing and Measurement. Output voltages are 12, 15, 18, 24, 28, 36, 48 and 54 VDC.

GaN Half-Bridge Solutions including Drivers
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Learn more:
infineon.com
  • Product Release
  • 2026-02-26

Infineon expands its CoolGaN™ portfolio with the CoolGaN Drive HB 600 V G5 product family. The four devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration together with integrated high- and low-side gate drivers and a bootstrap diode, delivering a compact, thermally optimized power stage. By bringing key functions into one optimized package, the family lowers external component count, eases PCB layout challenges typically associated with fast-switching GaN and helps designers shorten development cycles while achieving the core advantages of GaN technology: higher switching frequencies, lower switching and conduction losses, and greater power density. Targeting low-power motor drive systems and switched-mode power supplies, the integrated half-bridge enables smaller magnetics and passive components, higher efficiency across operating conditions, and improved dynamic performance in space-constrained designs. The device achieves switching with a 98 ns propagation delay. For simplified system integration, it offers a PWM input compatible with standard logic levels and operates from a single 12 V gate driver supply, while fast UVLO recovery helps ensure robust behavior during start-up and transient supply events. The products are housed in a 6 x 8 mm² TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.

Programmable AC/DC Power Supply Series
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Learn more:
lambda.tdk.com
  • Product Release
  • 2026-02-24

TDK Corporation has expanded the 3000 W TDK-Lambda HWS3000 programmable AC/DC power supply series with the HWS3000GT4 model. Now available with a wide-range 340 – 528 V AC three-phase input option its nominal output voltages and output currents remain fully programmable from zero up to their maximum ratings. Output programming can be achieved using a serial RS485 interface (MODBus protocol) or analog 1 - 5 V or 4 - 20 mA signals, enabling straightforward connection to PLCs, automation systems, and test equipment. These devices also feature a variable speed fan with 45 dB audible noise at <70 % load, and a 25 ºC typical ambient temperature. The HWS3000 series can be used in a wide range of applications, including test and measurement, semiconductor fabrication, RF amplifiers, laser machining, printing, and industrial equipment. Six nominal output voltages, 24 V, 48 V, 60 V, 80 V, 130 V, and 250 V, can be programmed to cover voltages from 0 – 300 V. Available in a 270 × 150 × 61 mm³ case size, up to three units can be connected in series or up to ten in parallel, offering scalable solutions for higher voltage or current requirements. The digitally programmable voltage slew rate, along with monitoring functions such as cumulative operating time, fault logs, and product identification, enhances system control and diagnostics.

Surge Protection Device
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Learn more:
bourns.com
  • Product Release
  • 2026-02-24

Bourns announced its GDT225HE Series High Voltage, High Energy Gas Discharge Tube (GDT) Arresters. Providing surge protection performance these GDTs are optimized for high-energy AC/DC power systems, including EV charging infrastructure, Battery Energy Storage Systems (BESS) and industrial power conversion equipment. These systems, in particular, are known to experience commutation or fault insertion events. It is the series’ ability to safely conduct prolonged high thermal (I²t) energy during transient conditions that makes it well-suited for system-level surge and fault protection, equipotential bonding and for lightning-prone designs where high-energy discharge must be safely diverted and controlled. The Bourns GDT225HE Series features a broad DC Breakdown Voltage (DCBV) from 1000 to 2000 V, In 40 kA (Nominal Discharge Current) and Imax 60 kA (Maximum Discharge Current) ratings on an 8/20 μs waveform to deliver protection for lightning-prone and high-energy applications. These high-power GDTs provide a space-saving alternative to bulky surge protection solutions. This series is also available in various lead shapes to fit in different configuration specifications; it is UL Recognized, ITU-T K.12 tested and RoHS compliant.

Intensified Distribution Agreement on Power Supplies
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Learn more:
recom-power.com
  • Industry News
  • 2026-02-24

RECOM Power and electronics distributor Bürklin Elektronik are intensifying their collaboration, which has been in place for more than twelve years. The aim of expanding the partnership is to provide customers even faster and more comprehensively with DC/DC and AC/DC power supply solutions from RECOM for industrial, medical, and railway applications. "The intensified collaboration with Bürklin is an important step for us in order to serve our customers even more precisely and quickly," says Uwe Frischknecht, Managing Director Sales EMEA at RECOM. "Bürklin has a strong market presence and outstanding logistics expertise, which perfectly complements our technology portfolio."

Evaluation Board for Humanoid Robot Joint Applications
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Learn more:
epc-co.com
  • Product Release
  • 2026-02-24

Efficient Power Conversion (EPC) has released the EPC91122, a 3-phase BLDC motor drive inverter evaluation board specifically engineered for humanoid robot joint applications. Featuring EPC’s EPC33110 3-phase ePower™ Stage module, the EPC91122 delivers up to 20 ARMS (28 Apeak) phase current in an adequate form factor optimized for space-constrained robotic joints, integrating all key functions of a complete motor drive inverter, including a microcontroller, motor shaft angular sensor, housekeeping power supplies, accurate voltage and current sense. The EPC91122 is mechanically optimized to fit directly inside humanoid joint motors. The complete GaN inverter occupies a 32 mm diameter inner circle, surrounded by a 55 mm external frame that supports mechanical mounting and lab connectivity. This design lets the inverter fit inside the motor chassis, which lowers loop inductance and makes the power density and dynamic performance higher. The EPC33110 is the main part of the system. It is a three-phase co-packaged module with a maximum voltage of 100 V. It has three monolithic GaN half-bridges with built-in gate drivers, bootstrap circuits, and level shifters. The device has an RDS(on) of 11.7 + 13 mΩ and can switch at frequencies of up to 150 kHz, which means it may use smaller passive components and respond quickly to changes. The board operates from a wide input range, making it well-suited for battery-powered robotic systems. It integrates all critical subsystems required for a complete motor drive inverter. The EPC91122 comes preprogrammed to operate at 100 kHz PWM with 50 ns dead time, showcasing the high-speed switching capability enabled by GaN technology. Thermal testing under real-world operating conditions confirms the board’s capability for continuous and pulsed operation. Complete design support files, including schematic, bill of materials (BOM), and Gerber files, are available.

Joining Forces for Silicon Power Semiconductor for high-voltage Modules
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Learn more:
hitachienergy.com
  • Industry News
  • 2026-02-24

Hitachi Energy announced a collaboration to advance shared value creation and sustainable growth. Hitachi Energy will incorporate Pakal Technologies’ Insulated Gate Turn-Off (Thyristor), IGTO(t)™, silicon power switch into its portfolio of high-voltage power modules, beginning with devices used in essential applications such as rail, renewables, energy storage, AI, and data center infrastructure. The collaboration addresses one of the most significant challenges in large-scale electrification: reducing energy losses and improving overall efficiency in high-voltage power conversion. By combining Hitachi Energy’s expertise in power module design with Pakal Technologies’ IGTO(t) innovation the collaboration aims to contribute to cumulative daily efficiency gains across energy infrastructure. Together, the companies intend to produce the highest-performing ≥3.3 kV power semiconductor modules for Hitachi Energy to offer to its large and growing global customer base, delivering higher performance, lower operating costs, and greater long-term reliability across critical electrification projects.

productronica China 2026 Draws Asia’s Leaders in Intelligent Electronics Manufacturing
  • Event News
  • 2026-02-22

From March 25 to 27, 2026, productronica China 2026 will be held grandly at Halls E1-E5 and W1-W4 of the Shanghai New International Expo Centre. As an important display and exchange platform for the electronic manufacturing industry, this edition will feature over 1,000 exhibitors across its exhibition area of nearly 100,000 square meters. It will focus on the needs of multiple fields, including automobiles, industry, communication electronics, and medical electronics. It aims to present an "innovation feast" covering the entire industrial chain of electronic production to the industry, highlighting smart factories, new energy vehicle technology, and the digital future.

Contract extended ahead of Schedule
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Learn more:
infineon.com
  • People
  • 2026-02-19

Infineon Technologies AG plans to extend the contracts of Chief Executive Officer Jochen Hanebeck and Chief Financial Officer Dr. Sven Schneider ahead of schedule. Jochen Hanebeck’s contract is to be extended until the end of March 2032, while Dr. Sven Schneider’s contract is to run until the end of April 2032. Without the planned extension, the contracts would have expired on 1 April 2027 and 1 May 2027, respectively. The Supervisory Board will pass the formal resolution in May. "Infineon Technologies AG is in very capable hands, which is why we are establishing clarity about the company’s long term direction at an early stage," says Dr. Herbert Diess, Chairman of the Supervisory Board of Infineon Technologies AG. "With important investments in technological strength and a consistent focus on competitiveness, Jochen Hanebeck - together with Sven Schneider and the entire Management Board team - has successfully positioned Infineon for the future. The company will continue on this path of profitable growth in the years ahead." "We are determined to seize future opportunities - for example in the fields of artificial intelligence, software defined vehicles and humanoid robotics," says Jochen Hanebeck. "Infineon is exceptionally well positioned to benefit from the defining growth trends of our time. The key to success is the ability to rapidly turn innovation into customer value. I would like to thank the Supervisory Board for its confirmation to continue consistently on this path."

Automotive SMT Common Mode Chokes
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Learn more:
coilcraft.com
  • Product Release
  • 2026-02-18

The CMA family of automotive qualified common mode chokes from Coilcraft are available for current ratings up to 8.2 A. Providing suppression of high frequency common mode noise up to 100 MHz they are suitable for inverters, motor drives, onboard chargers, as well as telecom and industrial applications. The AEC-Q200-qualified surface mount toroids provide isolation (hipot) up to 1500 Vrms. The CMA series complements the Cx common mode choke series with AEC qualified reliability.

Charles Hosono Appointed CEO
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Learn more:
presto-eng.com
  • People
  • 2026-02-18

Presto Engineering announced the appointment of Charles Hosono as Chief Executive Officer. He succeeds Cédric Mayor, who is stepping down to pursue new projects after contributing to the company’s development for nearly 16 years. Charles Hosono brings over 30 years of experience in the global semiconductor industry to Presto, alongside a proven track record of supporting high-growth international companies. He began his career as a radio frequency (RF) integrated circuit design engineer before holding sales and marketing leadership roles at NXP (formerly Philips Semiconductors) and Infineon Technologies. A recognized expert in business growth and organizational structuring, Charles Hosono notably contributed to the success of leveraged buyout operations at Linxens as Global VP of Sales and Marketing and President of the Asia-Pacific region. With a robust international background, Charles spent nearly 15 years in Asia between Singapore and Shanghai, providing him with a global perspective on semiconductor market challenges.

Compact Package for Automotive 40 V/60 V MOSFETs
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Learn more:
rohm.com
  • Product Release
  • 2026-02-18

ROHM has expanded its lineup of low-voltage (40 V/60 V) MOSFETs for automotive applications – such as main inverter control circuits, electric pumps, and LED headlights – by introducing latest products adopting the new HPLF5060 package (4.9 mm × 6.0mm). The HPLF5060 package offers a smaller footprint compared to the widely used TO-252 package (6.6 mm × 10.0 mm) while enhancing board-mount reliability through the adoption of gull-wing leads. Additionally, the use of copper clip junction technology enables high-current operation, making the HPLF5060 suitable for demanding automotive environments.

6500 V / 2000 A Press Pack IEGT for HV DC Applications
  • Product Release
  • 2026-02-17

Toshiba Electronics launched the ST2000JXH35A, a 6500 V / 2000 A press pack injection enhanced gate transistor (IEGT) designed for high-voltage converters used in DC power transmission systems, industrial motor-drive equipment and static synchronous compensators (STATCOM). The device uses trench-type IEGT chips. The ST2000JXH35A is able to streamline the design of high-voltage systems. By adopting this 6500 V-rated product, engineers can reduce the number of series-connected devices required in DC power transmission architectures. This reduction in component count directly contributes to the weight reduction and miniaturisation of overall equipment designs. Consequently, these improvements help reduce construction and transportation costs, offering value for offshore converter stations in wind farms, where installation costs and logistical complexity are significant. The product features a press-pack design that supports double-sided cooling and a hermetic sealing structure to ensure the reliability required for long-term industrial operation. In addition to transmission infrastructure, the ST2000JXH35A enables higher voltage ratings and more compact form factors for industrial motor drives and reactive power compensation devices that stabilize power systems.

Record Efficiencies for Tandem Photovoltaic Modules
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Learn more:
ise.fraunhofer.de
  • Industry News
  • 2026-02-17

Scientists at the Fraunhofer Institute for Solar Energy Systems ISE have succeeded in constructing two tandem photovoltaic modules with record efficiencies. A III-V germanium PV module with an efficiency of 34.2 percent, incorporating solar cells from AZUR SPACE and anti-reflection structures from temicon, thus becomes "the most efficient solar module in the world", Fraunhofer ISE says. "A III-V silicon PV module achieves an efficiency of 31.3 percent, setting a record in its class, and is based on established, cost-effective silicon technology." A few years ago, researchers at the Fraunhofer ISE achieved a new efficiency record for silicon-based solar cells with a III-V silicon solar cell reaching 36.1 percent. As part of the research project "Mod30plus," they have now, for the first time, realized a small-scale production of these solar cells, adapted for interconnection with shingle technologies. A module produced by the research team in this way, measuring 218 square centimeters, has now achieved an efficiency of 31.3 percent. A 833-square-centimeter tandem module with an efficiency of 34.2 percent was built by a second research team from Fraunhofer ISE as part of the "Vorfahrt" project. It consists of triple III-V germanium cells. Conventional silicon solar cells cannot exceed a physical efficiency limit of 29.4 percent; currently commercially available PV modules already have efficiencies around 24 percent. Both research projects were funded by the German Federal Ministry for Economic Affairs and Energy.

Automotive Grade High Voltage Chip Resistors: Up to 100 MΩ
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Learn more:
seielect.com
  • Product Release
  • 2026-02-16

Stackpole’s RVCA Series is a thick-film, high-voltage chip resistor family purpose-built to meet the demands of 400 V, 800 V, and higher voltage systems. Designed to simplify high-voltage circuit implementation, RVCA provides engineers with a reliable, compact solution that reduces the need for series stacking while improving long-term stability. The series is automotive grade, AEC-Q200 qualified, and anti-sulfur compliant per EIA-977, ensuring robust performance in harsh, high-stress environments common to EV, industrial, and power electronics applications. The RVCA Series supports voltage ratings up to 3 kV in the 2512 case size, with 0805 and larger packages offering minimum ratings of 400 V. The resistance range spans from 30 kΩ to 100 MΩ further enables implementation of voltage dividers, sensing networks, bleed circuits, and high-impedance nodes across high-voltage platforms.

PCIM Conference 2026 – preliminary program
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Learn more:
pcim.mesago.com
  • Event News
  • 2026-02-16

The conference program for PCIM Expo & Conference 2026 is now online. With over 500 conference presentations and poster presentations, you can expect a high-caliber program covering the entire value chain of the power electronics industry. In addition, the 27 half-day seminars on the two days preceding the conference offer practical insights and in-depth technical knowledge.

Distribution Partnership for Silicon Carbide Solutions
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Learn more:
semiq.com
  • Industry News
  • 2026-02-12

SemiQ has announced a distribution agreement with NAC Semi, a global electronic component design services and distribution company. This partnership is expected to accelerate the adoption of SemiQ’s SiC technology across North America markets, providing engineers with access to high-efficiency power modules, MOSFETs, and Schottky diodes. NAC Semi bridges the gap between catalog houses and large fulfillment distributors by offering "demand creation" services, including dedicated Field Applications Engineer (FAE) support. By adding SemiQ to its line card, NAC Semi enhances its ability to provide comprehensive SiC solutions for applications such as EV charging stations, solar inverters, and high-voltage power supplies.

4 kW DC/DC Converters with 180 – 950 VDC Input
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Learn more:
recom-power.com
  • Product Release
  • 2026-02-11

The RECOM RMOD4000 series of plug-and-play DC/DC converters is able to provide isolated 14 V, 28 V, or 56 V DC network rails from a high input voltage between 180 and 950 VDC from traction batteries. Depending on variant and input voltage up to 4 kW is available, while the conversion efficiency is up to 95 %. The output is fully regulated and protected against over-current, over-voltage, over-temperature and short circuits, while the input has under-and over-voltage lockout and active inrush suppression. An isolated CAN J1939 interface is provided to allow control and data monitoring including output voltage adjustment. A separate hardware on/off control (ignition) and HV-interlock-function is included. As an added feature, an integrated OR-ing function is implemented, allowing paralleling of units for redundancy or increased power capability with active current sharing. Operating temperature is -40 °C to +85 °C with no derating. Full reinforced isolation is provided to IEC62477-1, vehicle safety standards ISO6469-3, and ISO 7637 are met, and the EMC standard ECER10 Rev 4 is certified (E-mark). The RMOD4000 series is presented in a water- and dust-proof cast aluminum enclosure to IP67 standard and can be baseplate or water-cooled with integrated coolant ports. Body dimensions are 316 × 254 × 83 mm³, and sealed, plug-in connectors are provided for input and outputs. Typical applications are as an on-board DC/DC converter for battery powered on- and off-highway vehicles, such as forklifts, golf carts, AGVs, loaders, tractors, ships, and electric boats, in the areas of marine, material handling, construction, airports, E-mobility and marine systems.

Current Transducers for up to 3200 V and 1500 A
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Learn more:
danisense.com
  • Product Release
  • 2026-02-11

Danisense has expanded its DN1000ID current transducer product family with the introduction of the DN1000ID-CP02 model, which features a significantly increased creepage and clearance distance of 38 mm, compared with 11 mm for the standard DN1000ID version. In addition, the permissible voltage for uninsulated cables has been raised from 1000 V to 3200 V, making them well-suited for power measurement and power analysis in EV chargers, power inverters, and battery energy storage systems. Additional target applications include EV test benches, particle accelerators, MRI systems and medical scanners, battery testing and evaluation equipment, current calibration systems, and other precision current-sensing applications. The DN1000ID-CP02 device incorporates a removable isolation insert and a 40 mm aperture to accommodate wide cable terminals. The transducer is capable of measuring currents up to 1500 A, with continuous measurement of 1000 A achieved with a linearity error of less than 1 ppm. An over-range capability of 1200 ARMS for up to 30 minutes is also supported. Based on Danisense’s closed-loop fluxgate technology, the DN1000ID-CP02 delivers an offset of 5 ppm. Noise performance is claimed to be "best-in-class, with sub-ppm RMS noise across frequencies up to 10 kHz".

GaN Insights eBook
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Learn more:
infineon.com
  • Industry News
  • 2026-02-10

The power electronics industry is undergoing a significant transformation, driven by the growing adoption of Gallium Nitride (GaN) power solutions. Infineon Technologies has published the 2026 edition of its annual GaN Insights, providing awareness into the world of GaN technology, its applications, and future prospects. According to analysts from Yole, the GaN power semiconductor market is expected to reach almost $3 billion by 2030, marking a 400 % increase compared to the 2025 market. This rapid growth is driven by significant production ramps, which began in 2025, broadening GaN adoption across multiple industries and enabling its penetration into new applications. In fact, the market is expected to grow at a compound annual growth rate (CAGR) of 44 % from 2025 to 2030 (Source: Trend Force), with revenue projections of $920 million in 2026, representing a 58 % growth over 2025 (Source: Yole). In 2026, designers are expected to uncover new uses of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon’s high-voltage bidirectional GaN switches feature a common drain design with a double gate structure, leveraging proven Gate Injection Transistor (GIT) technology. This architecture enables the use of the same drift region to block voltages in both directions, resulting in a significantly reduced die size compared to conventional back-to-back arrangements. For instance, utilizing Infineon’s CoolGaN™ BDS, which operates up to 1 MHz, solar microinverters deliver 40 % more power in the same-sized inverter while reducing system costs. The GaN Insights eBook is available on Infineon’s website.

Embedded Silicon Capacitors
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Learn more:
empowersemi.com
  • Product Release
  • 2026-02-10

Empower Semiconductor launched three embedded silicon capacitors (ECAPs™), designed to meet the power integrity demands of next-generation AI and high-performance computing (HPC) processors. These ECAPs include the EC2005P, with 9.34 μF capacitance in a 2 mm × 2 mm package; the EC2025P, offering 18.68 μF capacitance in a 4 mm × 2 mm package and the EC2006P, providing 36.8 μF capacitance in a 4 mm × 4 mm form factor. As AI processors push the limits of performance, power delivery has emerged as a critical constraint. Achieving the required power integrity for extreme current densities and ultrafast transient response is no longer realistic with board-level mounted components; embedding capacitors into the processor substrate is now essential.

Strategic GaN Technology Licensing and Second Sourcing Agreement
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Learn more:
epc-co.com
  • Industry News
  • 2026-02-10

Efficient Power Conversion (EPC) announced a comprehensive licensing agreement with Renesas Electronics Corporation. Under the agreement, Renesas will gain access to EPC’s proven low-voltage eGaN® technology and its established supply-chain ecosystem, accelerating the adoption of high-performance GaN solutions across a broad range of markets. EPC and Renesas will collaborate over the next year to establish internal wafer fabrication capabilities for these products. In addition, Renesas will second-source several of EPC’s GaN devices that are already in mass production, enhancing supply-chain resilience for customers. This alliance expands customer access to GaN technology while providing increased supply assurance through qualified second sourcing. "Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency - cutting costs in AI data centers and enhancing autonomous systems. This is an exciting moment for our industry and our company," said Alex Lidow, CEO of EPC.

10 kW DC/DC Platform delivering 98.5 % Efficiency
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Learn more:
navitassemi.com
  • Product Release
  • 2026-02-09

Navitas Semiconductor has introduced a 10 kW DC/DC power platform delivering up to 98.5 % peak efficiency and 1 MHz switching frequency to support next-generation AI data centers. The all-GaN 10 kW 800 V–to–50 V DC/DC platform employs 650 V and 100 V GaNFast™ FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5 % peak efficiency and 98.1% full load efficiency in a full-brick (61 mm × 116 mm × 11 mm) package, achieving 2.1 kW/in³ power density. The resulting production-oriented platform supports 800 V–to–50 V and +/- 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data centers.

Magnet-Free E-Motor to Reduce Production Costs
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Learn more:
pem.rwth-aachen.de
  • Industry News
  • 2026-02-09

Current axial flux machines (AFM) meet several positive criteria but are almost exclusively dependent on rare-earth magnets. To avoid the use of those cost-intensive and increasingly scarce resources, the radial flux synchronous reluctance machine (RF-SynRM) is currently considered a sustainable, robust, and overload-capable alternative. In turn, this entails compromises in terms of installation space and torque density. The "NAFTech" project of RWTH Aachen university therefore focuses on the concept of an axial flux synchronous reluctance machine (AF-SynRM) that combines the respective advantages of AFM and RF-SynRM. NAFTech therefore pursues an integrated approach to topology, multi-domain machine design, and production methods, supported by data-based optimization of tolerance chains. During the project, the simulative design of the machine and the suitability of the manufacturing processes will be validated with the aid of specially constructed partial demonstrators. The team says that "a magnet-free motor reduces material costs by up to 50 percent".

Isolated Gate Drivers for Automotive Modules
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Learn more:
st.com
  • Product Release
  • 2026-02-07

STMicroelectronics’ STGAP2SA and STGAP2HSA automotive-grade, galvanically isolated 4 A gate drivers with 60 ns response time and close part-to-part matching are suitable for IGBTs and silicon MOSFETs operating with a high-voltage rail up to 1200 V. The drivers can sink/source 4 A at up to 26 V for unipolar or bipolar driving. Extending the STGAP series, ST’s industrial and automotive galvanic isolated gate drivers, these AEC-Q100 qualified devices can handle a wide variety of applications throughout conventional, hybrid, and electric vehicles. Typical uses include DC/DC converters, pumps, fans, heaters, e-compressors, and on-board chargers (OBC). Other uses include wallbox and pedestal DC charging systems, as well as industrial inverters and motor drives. Featuring built-in protection, the drivers simplify design and enhance reliability, with under-voltage lockout (UVLO) and an output safe state during power-up and power-down. There is also Miller clamping to prevent induced turn-on and thermal shutdown to prevent operation above maximum safe temperature, automatically resuming when cooled. In addition, a self-monitoring watchdog makes the output safe if communication from the low-voltage side fails and there is a power-saving standby mode, entered by simultaneously holding the inputs high. Both devices meet UL 1577 isolation ratings. The STGAP2SA, in a standard SO-8 package, has transient and surge isolation voltages (VIOTM, VIOSM) of 4800 V. The STGAP2HSA is compliant with IEC 60747-17 for basic insulation and has 6000 V surge isolation voltage (VIOSM), in a wide-body SO-8W package with 8 mm creepage and clearance. A demonstration board is available for each part.

Partner Program launched
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Learn more:
we-online.com
  • Industry News
  • 2026-02-05

Würth Elektronik has launched its partner program to create a dynamic, high-growth innovation ecosystem in the electronics industry. The program was officially presented at a kick-off event at the end of September, where Texas Instruments was presented as the first Premium Partner. The semiconductor manufacturer Nexperia has also signed up as a Silver Partner. The Würth Elektronik partner program is divided into three tiers. Entry is possible with just a non-disclosure agreement, a brand license, and a business model. Based on clearly defined criteria – such as brand commitment, shared growth objectives, and the integration of Würth Elektronik components into their own designs – participating companies can then progressively advance from Entry Level through Silver to Premium Partner status. The program is based on four pillars: technical support, products and tools, marketing support, and knowledge transfer and training. This creates a network that brings together technology leaders, business units, and stakeholders. Partners can unlock new market potential, accelerate product innovation, and offer their customers a seamless one-stop-shop concept.

Service for Current Sense Transformers
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Learn more:
we-online.com
  • Product Release
  • 2026-02-05

Würth Elektronik expands its free design tool REDEXPERT to include the Current Sense Transformer Selector. It enables developers to select the appropriate current sense transformers based on parameters relevant to their application. Current sense transformers for measuring alternating current offer unique advantages over other current sensing solutions: galvanic isolation, low power loss, high immunity to signal noise, and simple circuit design. Selecting the right current sensor can be a challenge depending on the application. The Current Sense Transformer Selector from Würth Elektronik offers a unique design tool previously not available on the market in this form. After entering the parameters – current, frequency, signal type, and desired maximum error rate – the Selector finds all available options in Würth Elektronik’s product database that match these criteria. The tool provides a list of components with the corresponding parameters and simulates both the temperature rise and the error as a function of frequency and current. The tool also allows the direct comparison of different options in a simulation view and provides an overview page with all relevant information for the selected component. These simulations, based on actual measurements, save developers from having to conduct their own tests when selecting current sense transformers (CSTs). Typical applications of current sense transformers include AC current measurement, switched-mode power supplies, overload detection, load shedding/shutdown detection, metering, load measurement, and high-frequency current sensing.

Isolated Gate Driver ICs for SiC Applications
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Learn more:
infineon.com
  • Product Release
  • 2026-02-05

Infineon Technologies introduces the EiceDRIVER™ 1ED301xMC12I product family, a series of high-performance isolated gate driver ICs with opto. This enables engineers to migrate to SiC technology without redesigning opto-based control schemes. The family is suitable for demanding applications where fast, reliable, and SiC-capable gate drivers are required, such as motor drives, solar inverters, electric-vehicle chargers, and energy-storage systems. The 1ED301xMC12I product family includes three variants designed to support Si MOSFETs, IGBTs, and SiC MOSFETs: 1ED3010, 1ED3011, and 1ED3012. All devices deliver up to 6.5 A of output current. The gate drivers come in a CTI 600 6-pin DSO package offering more than 8 mm creepage and clearance. Their insulation is certified according to UL 1577 and is pending certification according to IEC 60747-17. The opto-emulator input uses two pins. With a CMTI exceeding 300 kV/µs, a propagation delay of 40 ns, and timing matching below 10 ns, the devices enable precise and robust switching behavior. Moreover, a pure PMOS sourcing stage further improves turn-on performance.

1200V SiC MPS Diodes
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Learn more:
rirpowersemi.com
  • Product Release
  • 2026-02-05

RIR Power Electronics has introduced a family of 1200 V Silicon Carbide Merged-PiN Schottky (MPS) diodes designed for high-efficiency and high-reliability power systems. The devices are available in current ratings from 10 A to 40 A in industry-standard TO-247-2L packages. By monolithically integrating Schottky and PiN structures, RIR’s SiC MPS diodes deliver near-zero reverse recovery with enhanced surge current capability, low leakage at elevated temperatures, and improved avalanche and blocking robustness compared to conventional Schottky diodes. The diodes target demanding applications such as EV charging, data centers and AI infrastructure, renewable energy and grid-tied systems, industrial drives, aerospace and defense, and green hydrogen and electrolysis systems.

Technology Guide to enhance Power Stability in AI-driven Data Centres
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Learn more:
murata.com
  • Industry News
  • 2026-02-04

Murata Manufacturing has launched a technology guide entitled: ‘Optimising Power Delivery Networks for AI Servers in Next-Generation Data Centres.’ Available on the company’s website, the guide introduces specific power delivery network optimisation solutions for AI servers that enhance power stability and reduce power losses across the data center infrastructure. The guide addresses the rapid advancement and adoption of AI, a trend driving the continuous rollout of new data centers worldwide. As the industry moves toward higher voltage operations and increased equipment density, the resulting increase in overall power consumption has made stable power delivery a critical business issue for data centre operators. Consequently, the guide focuses on power circuit design for data centers, providing a detailed overview of market trends, evolving technologies in power delivery, and the key challenges the sector currently faces. To assist engineers and designers, the guide is structured to provide a market overview that breaks down power consumption and technology trends within power lines. It further addresses market challenges and solutions by examining key considerations in power-line design and exploring how the evolution of power placement architectures can facilitate power stabilisation and loss reduction. Murata supports these architectural improvements with products, including multilayer ceramic capacitors (MLCC), silicon capacitors, polymer aluminium electrolytic capacitors, inductors, chip ferrite beads, and thermistors. Furthermore, the company provides design-stage support.

Texas Instruments to acquire Silicon Labs
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Learn more:
ti.com
  • Industry News
  • 2026-02-04

Texas Instruments and Silicon Labs have signed a definitive agreement under which Texas Instruments will acquire Silicon Labs for $ 231.00 per share in an all-cash transaction, representing a total enterprise value of approximately $ 7.5 billion. The acquisition aims to create a provider of embedded wireless connectivity solutions by combining Silicon Labs’ strong portfolio and expertise in mixed signal solutions with Texas Instruments’ analog and embedded processing portfolio and internally owned technology and manufacturing capabilities. The combined company is expected to accelerate growth by better serving existing and new customers through enhanced innovation and market access.

Power Module enhances AI Data Center Power Density and Efficiency
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Learn more:
microchip.com
  • Product Release
  • 2026-02-03

Microchip Technology launched the MCPF1525 Power Module, a highly integrated device with a 16V Vin buck converter that can deliver 25 A per module, stackable up to 200 A. This device is designed to power the latest generation of PCIe switches and high-performance compute MPU applications needed for AI deployments. The MCPF1525 is packaged in a vertical construction that maximizes board space efficiency and can offer up to a 40 % board area reduction when compared to other solutions. The compact power module is approximately 6.8 mm × 7.65 mm × 3.82 mm, making it usable for space-constrained AI servers. For increased reliability, the MCPF1525 includes multiple diagnostic functions reported over PMBus™, including over-temperature, over-current and over-voltage protection to minimize undetected faults. With a thermally enhanced package, the device is engineered to work within an operating junction temperature range of -40°C to +125°C. An on-board embedded EEPROM allows users to program the default power-up configuration. The MCPF1525 features a customized integrated inductor for low conducted and radiated noise, enhancing signal integrity, data accuracy and reliability of high-speed computing, helping reduce repeated data transmissions that waste valuable system power and time.

GaN Power Transistor: Seventh-Generation in Mass Production
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Learn more:
epc-co.com
  • Product Release
  • 2026-02-02

Efficient Power Conversion (EPC) has started volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN® family of power transistors. EPC2366 delivers up to 3× better performance than equivalent silicon MOSFETs. With a typical RDS(on) of 0.84 mΩ and an optimized RDS(on) × QG figure of merit (FoM) < 12 mΩ *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC/DC conversion, AI server power supplies, and advanced motor drives. It supports drain-to-source voltages up to 40 V and transient voltages up to 48 V, with continuous drain currents up to 88 A and pulsed currents of 360 A, making it well suited for the most demanding power systems. The device is integrated in a 3.3 mm × 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W. To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers a reference platform to assess performance in real-world applications.

Coin Cell Supercapacitors
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Learn more:
schurter.com
  • Product Release
  • 2026-01-29

Coin cell supercapacitors are compact electrochemical energy storage devices with a high capacity that can quickly store and release electrical energy. Compared to conventional batteries, they offer several advantages, including high power density, a long cycle life, and fast charge and discharge rates. Supercapacitors have around 10% of the energy density of rechargeable batteries of the same weight. However, their power density is ten to a hundred times greater. Supercapacitors can therefore be charged and discharged much faster. They can also withstand many more charging cycles than rechargeable batteries, making them suitable as a replacement or supplement wherever high switching loads are required. The coin cell supercapacitors are used in a variety of applications, including backup power supplies, electronic devices, renewable energy systems and medical devices. While they are most commonly used for real-time clock backup, they can also be used for memory backup, battery swap ride-through and LED or audible alarms. The coin cell supercapacitors from Schurter are available for horizontal mounting (SCCA) or vertical mounting (SCCC). They can be used in systems with a voltage of up to 5.5 V and have a capacitance value ranging from 100 to 1,500 mF.

High-Current, Low-Noise Shielded Power Inductor for Compact Power Systems
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Learn more:
sumida.com
  • Product Release
  • 2026-01-28

Sumida has launched the molded power inductors of the 0615CDMCC/DS series, a low-profile magnetic component engineered to support increasingly power-dense electronics, including compact computing devices, servers, and advanced DC/DC converter architectures. The 0615CDMCC/DS series leverages metal compound molding construction - a key advancement over traditional ferrite inductor designs. By embedding the winding in a solid composite core, Sumida has eliminated internal air gaps and improved magnetic flux containment. This results in higher current capability and enhanced thermal performance, allowing the inductor to maintain stable inductance even as load current rises. Because the molding process naturally produces a shielded magnetic structure, the 0615CDMCC/DS series significantly reduces electromagnetic interference (EMI) and minimizes magnetic flux leakage into nearby circuitry without bulk. Engineers designing around noise-critical applications such as high-speed digital boards, RF-sensitive devices, and distributed power rails, gain flexibility in component placement without compromising signal integrity. The inductor is ultra-thin with a footprint of 7.3 mm × 6.8 mm × 1.5 mm max.), giving engineers a practical solution for mechanical envelopes that leave little headroom for vertically oriented components. With operation and storage temperature support from -55 °C to +125 °C, the 0615CDMCC/DS series is prepared for demanding thermal conditions across computing, industrial, and battery-powered platforms. Inductance values from 0.12 µH to 1.50 µH are currently available.

High Voltage Diodes
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Learn more:
deantechnology.com
  • Product Release
  • 2026-01-28

Dean Technology added two series to their medium power high voltage diode line: the FH Series and SH Series of diodes. The FH series and SH series were conceptualized and designed based on specific needs from customers. Using the technology of the legacy 2CL series diode line, these series offer higher current and significantly faster reverse recovery time, making them suited for applications with critical performance requirements such as X-ray equipment (medical, dental, industrial, and security), induction heating, and high voltage power supplies. SH series models are standard recovery, but the FH series offers a reverse recovery time (TRR) of 40 ns maximum, significantly faster than its 2CL predecessor (100 ns). The SH series units offer a maximum repetitive reverse voltage range (VRRM) from 8 to 15 kV at 200 to 350 mA of average forward current (IFAVM). The FH series offers a VRRM range of 2 to 30 kV at an IFAVM range of 100 to 700 mA.

GaN Technology Licensing Agreement
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Learn more:
vis.com.tw
  • Industry News
  • 2026-01-28

Vanguard International Semiconductor Corporation (VIS) has signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) for high-voltage (650 V) and low-voltage (80 V) Gallium Nitride technologies. This agreement will help VIS accelerate the development and expansion of next-generation GaN power technologies for applications such as data centers, automotive electronics, industrial control, and energy management. Through this licensing agreement, VIS will expand its GaN-on-Si technology into high-voltage applications and offer a GaN-on-Si platform for power applications. Combined with its existing GaN-on-QST technology platform, VIS claims to "become the only foundry in the world capable of offering power GaN technologies on both silicon and QST substrates". VIS will support complete product solutions covering low voltage (<200 V), high voltage (650 V) and ultra-high voltage (1200 V). The technology will be validated on VIS’ mature 8-inch manufacturing line to ensure process stability and high yield. Development activities are expected to commence in early 2026, with production scheduled for the first half of 2028.

600 V Super Junction MOSFET Platform
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Learn more:
aosmd.com
  • Product Release
  • 2026-01-27

Alpha and Omega Semiconductor unveiled its αMOS E2™ 600 V Super Junction MOSFET platform. The first high-voltage product from the platform is AOS’ AOTL037V60DE2. The MOSFET is designed to meet the growing demand for high efficiency and high-power density across a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems. AOS engineered its αMOS E2 High-Voltage Super Junction MOSFET platform with an intrinsic body diode to reliably handle hard commutation scenarios, such as reverse recovery of the freewheeling body diode that can occur during abnormal events, such as short-circuits or start-up transients. The AOTL037V60DE2, available in a TOLL package, features a maximum RDS(on) of 37 mΩ. In evaluations conducted by AOS’ application engineering team, the body diode ruggedness of this MOSFET demonstrated the ability to withstand di/dt = 1300 A/µs under specific forward current conditions at a junction temperature of 150°C. Moreover, AOS testing confirmed that the AOTL037V60DE2 delivered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short-Circuit Withstanding Time (SCWT) when compared to competing MOSFETs. This enhanced ruggedness translates into greater system-level reliability, ensuring robust performance even under abnormal operating scenarios.

LDO Regulators with 500 mA Output Current
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Learn more:
rohm.com
  • Product Release
  • 2026-01-27

ROHM has developed the "BD9xxN5 Series" of LDO regulator ICs with 500 mA output current, featuring its proprietary ultra-stable control technology "Nano Cap™ ". This series comprises 18 products designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure. ROHM developed the "BD9xxN1 Series" LDO regulator (150 mA output current) in 2022, incorporating its proprietary control technology, Nano Cap , which enables stable operation with output capacitors as small as 100 nF. The BD9xxN5 Series builds on the BD9xxN1 Series by increasing the output current to 500 mA – more than three times higher than before – significantly broadening its suitability for applications requiring higher power. In addition, very low output voltage ripple of approximately 250 mV (with load current variation of 1 mA to 500 mA within 1 µs) is achieved with a small output capacitance of 470 nF (typical). Beyond standard small MLCCs (multi-layer ceramic capacitors) in the range of several µF and large-capacity electrolytic capacitors, it also supports ultra-small MLCCs, such as the 0603M size (0.6 mm × 0.3 mm), with capacities below 1 µF. This contributes to space saving as well as greater flexibility in component selection.

IGBT Series for Solar and Energy Storage Systems
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Learn more:
magnachip.com
  • Product Release
  • 2026-01-22

Magnachip Semiconductor launched a series of IGBTs designed for solar inverters and industrial Energy Storage Systems (ESS). These 650 V and 1200 V generation discrete IGBT products provide improved Reverse Bias Safe Operating Area for stable and reliable performance under harsh high-voltage and high-current conditions. The products are available in both standard TO-247 and high-capacity TO-247 Plus packages. Specifically, the cell pitch has been reduced by approximately 40 %, increasing current capacity within the same die area. Magnachip plans to further expand its product lineup in the first half of 2026 by introducing a high-current series rated up to 650 V / 150 A, as well as new 750 V products. The company also plans to add the ‘TO-247-4Lead’ package, featuring a Kelvin pin for improved switching efficiency.

Sintered Metal Shunt Resistors
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Learn more:
rohm.com
  • Product Release
  • 2026-01-22

ROHM has developed the UCR10C Series, which is claimed to deliver "the industry’s highest rated power for 2012-size shunt resistors (10 mΩ to 100 mΩ)". The devices form a copper-based resistive element on an alumina substrate via sintering, achieving rated powers of 1.0 W and 1.25 W. This enables the replacement of products with wide terminal types or larger alternatives, facilitating miniaturization and reducing the number of components required. Furthermore, the use of a metal resistive element achieves a low TCR (0 to +60 ppm/°C). This minimizes errors due to temperature changes, enabling high-precision current sensing. Moreover, it achieves the same level of durability as the metal plate types in temperature cycle testing (-55 °C / +155 °C, 1000 cycles).

1200 V / 300 A IGBT Module in CPAK-EDC Package
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Learn more:
cissoid.com
  • Product Release
  • 2026-01-22

CISSOID has expanded its standard product offerings with the CMT-PLA1BL12300MA. This 1200 V / 300 A Half-Bridge IGBT Power Module is now available in the industry-standard CPAK-EDC package, delivering enhanced mechanical robustness and drop-in compatibility. The CMT-PLA1BL12300MA is designed for high frequency switching and high-performance industrial applications, such as UPS systems, motor and motion control solutions, and power supplies. Utilising Trench Gate Field Stop (TG-FS) IGBT technology, the module delivers a balance between switching speed and conduction losses. Integrated diode technology provides fast and soft reverse recovery, simplifying system design while improving the EMC performance. The device is rated for 450 A continuous DC current (@ Tj = 90 °C), operates with a saturation voltage Vce_sat = 1.56 V (@ Ic = 300 A, Tj = 25 °C) / Vce_sat = 1.78 V (@ Ic = 300 A, Tj = 150 °C) and offers the following thermal resistance: Rth_jc = 0.065 °C/W (IGBT) / 0.1 °C/W (diode).

600 V Gate Driver Family
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Learn more:
microchip.com
  • Product Release
  • 2026-01-21

Microchip introduced its 600 V Gate Driver portfolio, featuring 12 devices available in half-bridge, high-side/low-side and 3-phase driver configurations, which are designed for motor control and power conversion systems for industrial and consumer applications. The 600 V gate drivers provide current drive options from 600 mA to 4.5 A. They support 3.3V logic for seamless integration with microcontrollers. They are designed with Schmitt-triggered inputs and internal deadtime to protect MOSFETs.

Senior Vice President for Power Solutions
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Learn more:
omnionpower.com
  • People
  • 2026-01-21

OmniOn Power™ (OmniOn) has appointed Philip Zuk as Senior Vice President and General Manager of its AI and Data Center business. He has more than 25 years of experience in the global power electronics and semiconductor industries. In this role, Zuk will lead the company’s recently established AI and Data Center business unit, focused on addressing the power challenges faced by today’s AI-driven data centers while anticipating the industry’s future power requirements. Prior to joining OmniOn, Zuk used to work for Transphorm, Microsemi and Vishay Siliconix.

Family of Dual-Channel Digital Isolators for High-Voltage Systems
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Learn more:
diodes.com
  • Product Release
  • 2026-01-20

Diodes Incorporated announced the API772x RobustISO™ products, a series of dual-channel digital isolators, which are specifically designed to provide a reliable and robust isolation solution for digital signals in critical applications - addressing rising demands in areas such as industrial automation, new energy power systems, and data center power supplies. The API772x digital isolators are engineered to meet reinforced and basic isolation requirements across various standards, including VDE, UL, and CQC. They offer a 5,000 VRMS isolation rating for one minute, per UL 1577, and feature an 8,000 VPeak isolation rating, per DIN EN IEC 60747-17 (VDE 0884-17), with a maximum surge isolation voltage of 12,800 VPeak. This level of isolation represents a significant differentiation with a higher breakdown voltage exceeding 12 kV. The capacitive isolation barrier employed in these devices, which has a thickness greater than 25 µm, is predicted to have an operational lifetime of over 40 years. These RobustISO digital isolators support data rates of up to 100 Mbit/s and shows a minimum common-mode transient immunity (CMTI) of 150 kV/µs. The API772x series operates over a supply voltage range of 2.5 V to 5.5 V and features low-power consumption, typically drawing 2.1 mA per channel at 1Mbps. They also offer a low propagation delay of 11ns (typ.), ensuring timely signal transferring. The API772x devices are supplied in the SO-8W (Type CJ) package.

Concurrent forums of productronica China 2026: Focusing on Four Trends and Guiding the Development Direction of Intelligent Manufacturing
  • Event News
  • 2026-01-19

From March 25 to 27, 2026, productronica China 2026 will be held grandly at Halls E1-E5 and W1-W4 of the Shanghai New International Expo Centre (SNIEC). As an important display and exchange platform for the electronic manufacturing industry, this edition will feature over 1,000 exhibitors across its exhibition area of nearly 100,000 square meters. It will focus on the needs of multiple fields, including component manufacturing, test and measurement, quality assurance, new energy vehicle inspection technology, surface mount technology (SMT), electronics manufacturing services (EMS), automated electronic assembly, clean technology, cable processing, electronic chemical materials, dispensing and bonding technology, robotics, AGV, intelligent warehousing, sensor technology, motion control and drive technology,new energy vehicle technology as well as automotive PLC Industrial control system. It aims to present an "innovation feast" covering the entire industrial chain of electronic production to the industry, highlighting smart factories, new energy vehicle technology, and the digital future.

R&D Centre and SMT Prototyping Line in Xiamen/China opened
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Learn more:
recom-power.com
  • Industry News
  • 2026-01-16

Recom Power has opened a Research & Development Centre and SMT Prototyping Line in Xiamen/China. This facility integrates R&D, Engineering, and Quality departments under one roof, to enable seamless collaboration across all stages of product development. This close interaction enables faster design iterations, improved Design for Manufacturability (DFM), accelerated trial runs and verification testing, as well as mass production part approval. Equipped with a dedicated SMT prototyping line, the Xiamen Centre allows for rapid sample and initial stock production. The RECOM Xiamen R&D Centre will serve as a vital hub for next-generation power conversion technologies, supporting both global and regional development initiatives. It complements RECOM’s existing design and production facilities across Europe, the USA, and Asia, ensuring consistent product quality and innovation worldwide.

DC link Capacitor operate at up to +105 °C without Derating
  • Product Release
  • 2026-01-15

TDK Corporation announced the ModCap UHP (B25648A) series of DC link capacitors. ’UHP’ stands for ’Ultra-High Performance’, and this series enables continuous operation at hotspot temperatures of up to +105 °C without power derating. Compared to previous ModCap generations, which required derating starting at +90 °C, the new design enables higher current density and a longer lifetime of 200,000 hours at +105 °C in challenging conditions, while supporting a 20 % higher current density. With a DC voltage rating of 1350 V to 1800 V and a capacitance ranging from 470 µF to 880 µF, the series is optimized for SiC semiconductor-based inverters that require low inductance (ESL of 8 nH) and high-frequency performance. These capacitors target fast-growing sectors, including renewable energy (solar and wind power, electrolyzer), energy storage, and inverters for railway and industrial drives. Their cubic design (205 × 90 × 170 mm³; L x W x H) simplifies busbar integration, thereby increasing power density in compact converters and reducing the need for additional snubber capacitors.

Power Electronics International 2026 Event
  • Event News
  • 2026-01-15

Power Electronics International Conference 2026 returns to Brussels April 20 to 22, for its 4th edition as part of the Angel Tech conference series, bringing together the global power electronics community for two days of insight, discussion and collaboration. From automotive electrification and renewable energy to AI driven data centres and wide bandgap innovation, the agenda is built around the technologies shaping the future of power electronics. Co located with CS International, PIC International and Advanced Packaging International, the event will welcome 800 plus senior level attendees and 80 plus exhibitors, with four expert led conference programmes, a shared exhibition and dedicated networking receptions.

Tape-Out of Vertical Power Solution for AI Data Centers
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Learn more:
ambersemi.com
  • Industry News
  • 2026-01-15

Amber Semiconductor announced the successful tape out of its AmberSemi PowerTile™ vertical power delivery solution design specifically for AI processors in datacenters. PowerTile is a 1,000 A vertical power device that can be mounted on the backside of a server board, directly beneath the processor. By delivering power through a vertical path rather than traditional lateral distribution, PowerTile reduces power distribution losses to the processor by more than 85 %. PowerTile is a scalable solution designed to support CPUs, GPUs, FPGAs and other high-performance processors requiring large current delivery in minimal space. Measuring 20 mm × 24 mm × 1.68 mm, a single PowerTile can deliver up to 1,000 A directly to the processor. Multiple devices can be paralled to scale beyond 10 kA. The company expects to begin evaluation and testing with key partners later this year, with initial products shipping in material production volumes in 2027.

10 Watt Wide-Input Converters for Industrial Applications
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Learn more:
tracopower.com
  • Product Release
  • 2026-01-14

TRACO Power releases its TMR 10WI series of isolated DC/DC converters designed for versatility, offering an input range from 4.5 VDC to 75 VDC at an efficiency of up to 89 %. Each unit is equipped with protection features, including short-circuit protection, overcurrent limitation, undervoltage lockout, and remote on/off control. Certified to IEC/EN/UL 62368-1 standards, the series supports an operating temperature range of -40 °C to +70 °C and is rated for altitudes up to 5000 meters. Housed in a SIP-8 plastic case, the TMR 10WI series is available in both single and dual output configurations, making it suitable for industrial applications.

40 W and 75 W Railway DC/DC Converters
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Learn more:
recom-power.com
  • Product Release
  • 2026-01-14

RECOM announced two DC/DC converters for the rail market with an 11:1 input range to cover all nominal input voltages from 24 V to 110 VDC, with 24 V output and a 12 V and 15 V output version coming soon. Models RMD40-UW and RMD75-UW have trimmable outputs with reinforced isolation, rated at 40 W (60 W/10 s boost) and 75 W (90 W/10 s boost), respectively. The parts are offered as lightweight baseplate-cooled with a conversion efficiency of better than 90%, which means that they can operate at full power for OT4+ST1&ST2 classes from -40 °C to +85 °C with no additional cooling in any mounting position. Features like EN50121-3-2 filtering and disturbance protection, input reverse polarity protection, inrush current limiting, remote on/off, power-good signal/contacts, output trim and internal OR-ing diode for paralleling/redundant operation are already built in. An active hold-up circuit provides ≥10 ms ride-through across the whole input range. Protection against short circuits, over-current, over-temperature and over-voltage is included as well. The RMD40-UW is presented in a compact 100 × 60 × 30 mm³ package while the RMD75-UW just measures 110 × 73 × 40 mm³. Connections are by block terminals or optionally by Cage Clamp terminals as suffix /PT and a DIN-rail mounting option is available for both versions. The units come with aluminum housing in IP20, the electronic part is conformally coated for OV2/PD2 environment and both families fulfill EN45545-2 - HL3 fire protection hazard level.

Product Navigator Directs Engineers to the right Component
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Learn more:
we-online.com
  • Industry News
  • 2026-01-14

Würth Elektronik introduces an online tool that simplifies the search for the right components. The Product Navigator helps users select electronic and electromechanical components through practical example applications and typical topologies. With the Navigator, Würth Elektronik refines an approach that has been proven in the Application Guide since 2021. The Application Guide is now fully integrated into the significantly expanded Product Navigator. The advantage: Developers can now find the products relevant to their application area more quickly, without having to work their way through extensive catalogs. The tool’s navigation offers the following application areas to choose from: Shielding and grounding, cable assembly solutions, line filters, power supplies, DC filters, thermal management, optoelectronics, power distribution, IC peripherals, human–machine interaction (switches and displays), high-frequency and wireless communication, as well as measurement and sensor technology. Each area offers typical topologies and additional content to support electronics developers in designing their applications.

Sampling of four Trench SiC-MOSFET Bare Dies for Power Semiconductors starts
  • Industry News
  • 2026-01-14

Mitsubishi Electric Corporation has started shipping samples of four trench SiC-MOSFET bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power.

Protection Zener Diodes with Ratings up to 75 V
  • Product Release
  • 2026-01-13

Toshiba Electronics has added four products to its CUZ series of surge protection Zener diodes. The CUZ56V, CUZ62V, CUZ68V, and CUZ75V, with Zener voltages (VZ) of 56 V, 62 V, 68 V, and 75 V respectively, are designed for use in power supplies for data centers, network equipment, industrial systems, and system architectures with 48 V and above. They are designed to protect semiconductor devices against long pulse width switching surges and induced lightning surges, which can occur in the range of microseconds to milliseconds, as well as overvoltage pulses that are close to DC. While Toshiba’s TVS diodes specialise in ESD protection, these Zener products protect against surges while still providing electrostatic discharge (ESD) protection. All four products in this specific lineup share an absolute maximum power dissipation (PD) of 600 mW and a peak pulse current (IPP) rating of 5 A, according to IEC61000-4-5 at a peak transient of 8/20 µs. For the individual products, the measured VZ (min. to max.) ranges span from 52 V to 60 V (CUZ56V) up to 70 V to 79 V (CUZ75V), measured at a current (IZ) of 2 mA. Additionally, ESD voltages range from ±13 kV (CUZ56V) to ±23 kV (CUZ75V) under contact conditions, and 5 kV under air conditions. The dynamic resistance typically ranges from 3.1 Ω to 4.0 Ω, and the typical clamp voltage ranges from 112 V to 120 V. The diodes are housed in the SOD-323 (USC) package, which features gull-wing leads.

Larger Office in Japan opened
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Learn more:
rohde-schwarz.com
  • Industry News
  • 2026-01-12

Rohde & Schwarz has opened a larger office in Osaki/Japan, with increased capabilities. The location, which replaces the original one in Shinjuku, has significantly enhanced facilities for service, repair, calibration and engineering support of test equipment as well as increased space for hosting. A test system that combines EMC receivers and automation software from Rohde & Schwarz with the AIP EMC Chassis Dynamometer enables vehicle manufacturers and Tier 1s to obtain an evaluation of the EMC performance of their designs under realistic operational conditions. AIP has enhanced this system with R&S radar target simulators to also provide vehicle-in-the-loop testing of radars in a controlled environment. This R&S office in Osaki has a dedicated space for calibration of EMC equipment and is near AIP’s new office.

MEMS-Based Hot-Switched Power Panel Validated
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Learn more:
menlomicro.com
  • Industry News
  • 2026-01-05

Menlo Microsystems announced, in partnership with Microchip Technology, that it has successfully completed the hot switching validation of a MEMS-based 1000V/500A (0.5 megawatt) relay panel that is the basis platform for future development of advanced circuit protection systems for the U.S. Navy. This accomplishment marks the first-ever validation of a MEMS-based 0.5 megawatt hot-switched relay panel for naval applications in the United States and is a critical step in the Navy’s 10-megawatt Advanced Circuit Breaker program.
Menlo Micro has successfully advanced through the program’s multiple phases of advancing complexity demonstrating the performance and scalability of its Ideal Switch® technology for power applications. Validation testing of the latest phase was completed at Microchip Technology’s advanced power test facilities.


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Strategic Agreement for Critical Metals RecoveryIndium Corporation&reg; has executed a long-term o...13786Industry NewsStrategic Agreement for Critical Metals RecoveryIndium Corporation&reg; has executed a long-term offtake framework agreement with Flash Metals USA Inc., a wholly owned subsidiary of Metallium Limited (MTM), for the supply of critical metals recovered using Metallium’s Flash Joule Heating technology. Under the agreement, Indium will purchase metals recovered from secondary raw materials and electronic scrap through Flash Metals USA’s recycling operations, including gallium, germanium, copper, tin, gold, and indium. The agreement, with an initial term of 10 years with automatic five-year renewal options, establishes a robust and diversified supply chain for U.S.-based recovery of strategic metals. Indium Corporation operates its own metals and compounds reclaim and recycle program that provides specialized recycling services for the electronics, semiconductor, display, battery, and other specialty material industries.03.04.2026 07:00:00Aprnews_2026-04-15_2.jpg\images\news_2026-04-15_2.jpghttps://www.indium.com/press-releases/indium-corporation-announces-strategic-agreement-for-domestic-critical-metals-recovery/indium.com
100 V Integrated GaN Power StagesEfficient Power Conversion (EPC) has introduced it...13800Product Release100 V Integrated GaN Power StagesEfficient Power Conversion (EPC) has introduced its next generation of 100 V integrated GaN power-stage ICs – EPC23108, EPC23109, EPC23110 and EPC23111 – targeting high-performance motion and power systems such as humanoid robots, drones, and other compact battery-powered platforms. The devices are designed to simplify implementation and improve operational robustness in real-world environments while preserving the efficiency and power-density advantages typical of integrated GaN technology. Each IC integrates the high-side and low-side eGaN&reg; FETs together with the gate driver and level shifting circuitry in a thermally enhanced QFN package. They support operation up to 100 V, with load current capability of 35 A (EPC23108, EPC23109) and 20 A (EPC23110, EPC23111), enabling reliable high-frequency switching performance. The control interface has an active-low fast-shutdown and standby input with a built-in 65 k&#8486; pull-up, which makes it work with industrial logic standards. As a result, designers can connect the devices directly to standard controllers without having to do any extra signal conditioning. This makes the design easier and makes sure that the devices work the same way on all platforms. Operational safety is improved through deterministic shutdown behavior. When standby is asserted, PWM switching stops immediately and the driver enters a low-quiescent-current state from the VDRV supply. If the driver supply is lost, an active gate pull-down ensures both the high-side and low-side FETs remain off, maintaining system control during fault conditions and enhancing reliability. The family also supports continuous 100% duty-cycle operation, which is necessary for full-torque and uninterrupted conduction modes.02.04.2026 13:30:00Aprnews_2026-04-15_16.jpg\images\news_2026-04-15_16.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3283/epc-expands-the-offering-of-100-v-integrated-gan-power-stages-optimized-for-motor-drives-with-improved-control-and-protectionepc-co.com
Measurement Day NurembergExperience an exclusive day dedicated to power and...13791Event NewsMeasurement Day NurembergExperience an exclusive day dedicated to power and high-end measurement technology on April 22, 2026, in Nuremberg at the Max Morlock Stadium. The event features practice-oriented technical presentations, direct exchange with experts, and a tabletop exhibition.02.04.2026 12:00:00Aprnews_2026-04-15_7.JPG\images\news_2026-04-15_7.JPGhttps://www.datatec.eu/de/en/m-day-nuremberg-2026?shopSwitchInitiated=1datatec.eu
Prototyping Controller for Wide-Bandgap Power ConvertersImperix introduced the B-Box 4, a Rapid Control Pr...13794Product ReleasePrototyping Controller for Wide-Bandgap Power ConvertersImperix introduced the B-Box 4, a Rapid Control Prototyping (RCP) system for power electronics. Featuring a proprietary architecture optimized for low-latency operation, the controller delivers advanced control loop speeds and signal fidelity. The device aims to accelerate experimental prototyping activities in both industrial and academic research environments. The B-Box 4 enables 20 MSamples/s synchronous sampling at all analog inputs simultaneously. This captures the full high-frequency content of current ripple or medium-frequency waveforms, and it permits the direct visualization of waveforms without extra instrumentation. Using oversampling, the B-Box 4 is not only a control system but also a monitoring and debugging tool, usable directly from the readily available measurements. It provides a PWM resolution of 250 ps, which is useful for ultra-fast switching applications, especially for techniques relying on phase shift control such as within medium-frequency converters. B-Box 4 can execute the control loop of simple systems in under 2 &mu;s, directly from the CPU. The device is fully integrated into an ecosystem of products designed to accelerate prototyping in power electronics.02.04.2026 07:30:00Aprnews_2026-04-15_10.jpg\images\news_2026-04-15_10.jpghttps://imperix.com/imperix-news/the-next-generation-of-power-electronics-hardware-is-here/imperix.com
GaN Half-Bridge Drivers provide smart ProtectionSTMicroelectronics has announced two half-bridge g...13797Product ReleaseGaN Half-Bridge Drivers provide smart ProtectionSTMicroelectronics has announced two half-bridge gate drivers that bring gallium-nitride (GaN) efficiency, thermal performance, and miniaturization to power and motion-control applications. The STDRIVEG212 and STDRIVEG612 deliver tightly controlled 5 V gate-drive signals to enhanced-mode GaN HEMTs, powered from a high-side voltage up to 220 V or 600 V respectively. The drivers contain high-side and low-side 5 V linear regulators (LDOs), a high-side bootstrap diode, and protection including under-voltage lock-out (UVLO) in a QFN package. An integrated fast-startup voltage regulator stabilizes the supply voltage for the driver output stage, enabling consistent gate control, while an embedded comparator turns off both GaNs on detecting overcurrent. Smart shutdown (SmartSD) automatically holds the switches off long enough to cool down and a fault pin provides overcurrent, overtemperature and UVLO reporting. The propagation delay of 50 ns is matched between high side and low side, with high-side start-up time of 5 &mu;s and &plusmn;200 V/ns dV/dt transient immunity, permitting high rotational speeds. The integrated LDOs have high current capability and provide separate sink and source paths, sinking up to 1.8 A / 1.2 &#8486;, and sourcing 0.8 A / 4.0 &#8486;. With 20V-tolerant logic inputs and a dedicated shutdown pin the STDRIVEG212 and STDRIVEG612 are able to save power during inactive periods. The EVLSTDRIVEG212 evaluation board is suitable for both devices.01.04.2026 10:30:00Aprnews_2026-04-15_13.jpeg\images\news_2026-04-15_13.jpeghttps://www.st.com/content/st_com/en/campaigns/innovative-gan-gate-drivers-for-advanced-efficiency-and-reliability-asp-mcmotdri.htmlst.com
AI-ready UPS Systems ValidationUnlike traditional workloads with slow and predict...13787Industry NewsAI-ready UPS Systems ValidationUnlike traditional workloads with slow and predictable power variations, modern AI creates "pulsed loads", where processors switch rapidly between idle and full capacity. Power demand can swing from 0 % to 100 % and back in milliseconds, creating erratic "on-off" cycles that place power infrastructure under severe stress. Uninterruptible power supply (UPS) systems must now also function as a dynamic power conditioner capable of reacting to these variable load swings in real time. If it cannot manage these pulses effectively, they can be reflected back to the grid or backup generators, threatening overall system stability or even breakdown. Vertiv provides critical infrastructure technologies, including large power converters. Its Power Center in Bologna/Italy needed to validate new Input Power Smoothing algorithms for its Vertiv&trade; Trinergy&trade; UPS systems. These intelligently draw energy from the UPS batteries during peak pulses, shielding the upstream generator from the erratic behavior of an AI load. Veritiv created a fully integrated measurement ecosystem from Yokogawa, anchored by the WT5000 Precision Power Analyzer, DL950 ScopeCorder, GM10 Data Acquisition System, and tied together by the IS8000 software platform. This configuration allows measuring currents of up to 5000 A, where the WT5000 Precision Power Analyzer provides primary power analysis. The DL950 ScopeCorder captures the transient behavior of the "pulsed loads" using its 16 channels. Connecting these domains is Yokogawa’s IS8000 software, which synchronizes the instruments using the IEEE 1588 Precision Time Protocol (PTP).01.04.2026 08:00:00Aprnews_2026-04-15_3.jpg\images\news_2026-04-15_3.jpghttps://tmi.yokogawa.com/de/news/briefs/2026/vertiv-partners-with-yokogawa-for-ai-ready-ups-systems-validation/tmi.yokogawa.com
Heat Sinks for Power Electronics and IC ComponentsWürth Elektronik launches a comprehensive heat sin...13798Product ReleaseHeat Sinks for Power Electronics and IC ComponentsWürth Elektronik launches a comprehensive heat sink portfolio, divided into three specialized product groups: The WE-HTO heat sinks are designed for THT-TO packages like the TO-220 and TO-247. WE-HIC includes classic finned heat sinks for components with flat surfaces, such as CPUs or DC/DC converters. The WE-HTOI and WE-HICI variants are supplied from the factory pre-coated with thermal interface material. This eliminates the air gap between the component and the heat sink, thus maximizing cooling performance. As a special service, Würth Elektronik provides technical support, detailed heat-sink characteristics, simulation options, as well as customer-specific modifications. The WE-HTO heat sinks are available in various shapes and with different surface structures to enable tailored cooling performance. These include variants with curved sheet metal and with cooling fins, which dissipate more heat through their increased surface area. In addition, matching M3 screws, nuts, and insulating sleeves for mounting on the WE-HTO and WE-HTOI heat sinks can also be ordered. WE-HIC is available in two variants: with continuous and interrupted fins. The design with continuous fins is designed for applications in which the airflow is aligned with the fins. The variant with interrupted fins, however, is well suited when airflow in the installation environment cannot be clearly defined. Heat sinks for ICs are available in sizes ranging from 20 &times; 20 to 40 &times; 40 mm&sup2;.31.03.2026 11:30:00Marnews_2026-04-15_14.jpg\images\news_2026-04-15_14.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=heat-sinkswe-online.com
High-Voltage Hardware-Based E-Fuse Reference DesignMicrochip offers a fully hardware-based e-fuse ref...13801Product ReleaseHigh-Voltage Hardware-Based E-Fuse Reference DesignMicrochip offers a fully hardware-based e-fuse reference design, which is optimized for high-voltage bidirectional applications, eliminating the need for an onboard microcontroller. Designed for both AC and DC systems, it supports 400 V DC and 800 V DC configurations and features bidirectional current blocking using mSiC&reg; MOSFETs. Protection is built in, with configurable current trip profiles for rapid-fault response. Its modular architecture separates the control and power boards. The power board utilizes high-performance 700 V or 1200 V mSiC MOSFETs, while the control board includes a suite of discrete components for precise monitoring and protection. Thermal management is optimized with SiC devices in the D2PAK-7L XL package for efficient heat dissipation. With overload (1 ms shutdown) and short-circuit protection (1 &mu;s shutdown), resettable operation and an ambient operating temperature range from -40 °C to +85 °C, this reference design is suited for applications such as battery disconnect units (BDU), on-board chargers (OBC), DC/DC converters, cabin heaters and AC compressor inverters.30.03.2026 14:30:00Marnews_2026-04-15_17.jpg\images\news_2026-04-15_17.jpghttps://www.microchip.com/microchip.com
2000 V / 40 A 4-Phase Boost ModuleInventchip Technology introduced the IV3B20023BA2,...13793Product Release2000 V / 40 A 4-Phase Boost ModuleInventchip Technology introduced the IV3B20023BA2, 2000 V 4-phase boosts in a 3B module package. Each phase consists of a 2000 V 23 m&#8486; SiC MOSFET and a 40 A diode connected in a boost converter topology. The product is aiming 1500 V solar photovoltaic (PV) system applications. The four boost phases are divided into two electrically isolated groups. Each group has two boosts with a common power ground and a separate boost output, plus an NTC for DBC temperature sensing. With such a topology arrangement, the module maximizes the flexibility of the circuit configuration for PV systems with a single, two or four DC inputs. The 3B module has the same dimensions as the standard Easy-3B and provides a minimum 10 mm creepage from terminals to terminals and terminals to heatsink. The difference is that the 3B uses a metal base instead of a bare DBC. The metal base allows the module to be screwed on a heatsink with a stable fixing force and avoids the module’s plastic case aging issue which could lead to the reduction or loss of the fixing force during temperature cycling tests or real applications. This 2000 V MOSFET is based on Inventchip’s second generation SiC technology. The co-packed 2000 V SiC diode was designed to carry a surge current over 5 times of its rated DC current. Compared to the flying-cap topology currently used in 1500 V PV systems, the 2000 V boost converter simplifies PV MPPT circuit design e. g. by eliminating external capacitors.30.03.2026 06:30:00Marnews_2026-04-15_9.png\images\news_2026-04-15_9.pnghttps://www.inventchip.com.cn/En/sic%20moduleinventchip.com
EMV 2026 successfully concludedThis year’s Expo in Cologne featured 124 exhibitin...13790Event NewsEMV 2026 successfully concludedThis year’s Expo in Cologne featured 124 exhibiting companies, covering 4,700 square meters of exhibition space and attracting 2,414 visitors. The event included an extensive training program with 42 lectures and 20 workshops, with a total of 571 participants. Fifty percent of exhibitors and 30 percent of visitors and participants traveled from numerous countries. The event once again combined further education with networking and hands-on experience with the latest product developments and measurement solutions in the field of electromagnetic compatibility. For the first time, the EMV offered its own session comprising three live demonstrations of real measurement setups, sources of interference, coupling mechanisms, and countermeasures. This format particularly met the needs of developers, test engineers and users with strong practical experience. The next EMV will take place in Stuttgart from 27 to 29 April 2027.26.03.2026 11:00:00Marnews_2026-04-15_6.jpg\images\news_2026-04-15_6.jpghttps://emv.mesago.com/stuttgart/en/press/press-releases/emv-press-releases/final-report-2026.htmlemv.mesago.com
TLVR Quad-Phase Module exceeding 2 A/mm²Infineon Technologies announced a high-current-den...13796Product ReleaseTLVR Quad-Phase Module exceeding 2 A/mm&sup2;Infineon Technologies announced a high-current-density quad-phase power module with TLVR (trans-inductor voltage regulator) inductors. The TDM24745T is an OptiMOS&trade; quad-phase power module designed to meet the rapidly growing power requirements of next-generation AI accelerators. Integrating four power stages, a TLVR inductor and decoupling capacitors into a 9 x 10 x 5 mm&sup3; package. The module delivers a current density exceeding 2 A/mm&sup2;. The TLVR architecture can reduce the required output capacitance by up to 50 percent. TDM24745T offers up to 320 A peak current capability. The TDM24745T power module integrates directly into Infineon’s end-to-end AI server power delivery ecosystem, which spans everything from the grid interface to the core processor rails.26.03.2026 09:30:00Marnews_2026-04-15_12.jpg\images\news_2026-04-15_12.jpghttps://www.infineon.com/market-news/2026/infpss202603-076infineon.com
Materials Trends for EV Li-ion Cells: Market and TechnologyIDTechEx’s market report <em>"Materials for Electr...13785Industry NewsMaterials Trends for EV Li-ion Cells: Market and TechnologyIDTechEx’s market report <em>"Materials for Electric Vehicle Battery Cells and Packs 2026-2036: Technologies, Markets, Forecasts"</em> explores the materials that act as the foundation for the EV battery cell market and predicts that the overall cell material market for electric vehicles will reach US$154 billion by 2036. What will be the next steps? Higher percentage silicon anodes are being developed that would significantly improve cell energy density. IDTechEx predicts a shift towards silicon over graphite in premium vehicle anodes towards the end of the next decade. There is significant development of semi-solid and solid-state electrolytes to replace liquid electrolytes and enable use of higher energy density anode materials. This would require polymer, ceramic or oxide-based materials. This is expected to be limited, however, due to challenges with scaling manufacturing. Furthermore, development of LMFP, LMO and LNMO is approaching commercialization, shifting the cathode materials market away from cobalt and towards low-cost manganese. Lithium anodes enable extremely high energy density, but increases battery degradation and reduces cycle life. A small proportion of the market may shift to lithium by the end of the next decade, reducing graphite demand, especially in an anode-less cell design. Lithium anodes can also be paired with low-cost sulfur cathodes to develop high gravimetric energy density cells. This would entail a reduction in other cathode material intensities, though market share is expected to be very limited in the EV sector.26.03.2026 06:00:00Marnews_2026-04-15_1.png\images\news_2026-04-15_1.pnghttps://www.idtechex.com/en/research-report/materials-for-electric-vehicle-battery-cells-and-packs/1147idtechex.com
Entering the World of Discrete PowerRECOM is rolling out a range of rectifier ICs to a...13771Industry NewsEntering the World of Discrete PowerRECOM is rolling out a range of rectifier ICs to allow engineers to build their own discrete DC/DC isolated power supplies. The range includes a fully integrated full-bridge rectifier with smart output-voltage limiting, that occupies less board space than 4 diodes, and a rectification controller IC for use with an external FET, suitable for either high-side or low-side rectification. The RVS002 integrates two N-channel MOSFETs and two Schottky diodes in a DFN2&lowast;2 package to create a low-loss full bridge rectifier capable of handling up to 3 W. A built-in intelligent voltage limiter prevents the output voltage from rising excessively under no load conditions, which increases voltage stability. When the power supply is under load, the limiter remains inactive and does not draw current. The RVSY018 synchronous rectification controller operates at up to 700 kHz, with a 30 ns turn on and 10 ns turn off characteristic, making it suitable for high-frequency power conversion applications. The rectification IC is self-powered from a single AC input allowing either high side or low side rectification. The controller supports both CCM and DCM operation and is compatible with both QR and active clamp flyback topologies. Both rectifier solutions operate over a -40 °C to +125 °C temperature range and are reflow oven solderable.25.03.2026 09:00:00Marnews_2026-04-01_4.jpg\images\news_2026-04-01_4.jpghttps://recom-power.com/en/knowledgebase/newsroom/rec-n-recom-enters-the-world-of-discrete-power-462.html?4recom-power.com
Power Inductors for Automotive ElectronicsWith the WE-MXGA inductors Würth Elektronik presen...13784Product ReleasePower Inductors for Automotive ElectronicsWith the WE-MXGA inductors Würth Elektronik presents AEC-Q200-certified components qualified for automotive applications. The inductors are well suited for use in lighting, infotainment systems, DC/DC converters (48 V/12 V), battery-management systems, ADAS modules, and LED headlights. The magnetically shielded SMT storage inductor WE-MXGA is particularly targeted towards high-frequency switch-mode power supplies, especially for switching regulators based on the latest GaN and SiC transistor technologies. These power inductors, which are made from pressed nanocrystalline powder core material, are available in two versions, in form factor 4020 with inductances of 0.16 to 4.7 &mu;H and in form factor 5030 with inductances of 0.22 to 15 &mu;H. With a current capability of up to 28 A and an operating voltage up to 80 V<sub>DC</sub>, the inductor has an operating temperature range from -40 °C up to 125 °C.24.03.2026 15:30:00Marnews_2026-04-01_17.jpg\images\news_2026-04-01_17.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=we-mxgawe-online.com
Global Distribution Agreement for Silicon Power MOSFETsiDEAL Semiconductor has signed a global distributi...13773Industry NewsGlobal Distribution Agreement for Silicon Power MOSFETsiDEAL Semiconductor has signed a global distribution agreement with DigiKey, who will stock the semiconductor manufacturer’s products. Under the agreement, DigiKey will distribute iDEAL’s portfolio of silicon MOSFETs. The collaboration provides customers with immediate online access to inventory through DigiKey’s global e-commerce platform. iDEAL Semiconductor’s SuperQ&trade; technology is designed to enable improved energy efficiency and power density while maintaining the reliability, manufacturability, and cost structure of standard silicon processes. The devices are suited for applications including battery management systems (BMS), motor drives, fast charging, data center power architectures, and other high-performance power conversion systems.24.03.2026 11:00:00Marnews_2026-04-01_6.png\images\news_2026-04-01_6.pnghttps://idealsemi.com/ideal-semiconductor-signs-global-distribution-agreement-with-digikey/idealsemi.com
Partnership for SiC-based Solid-State TransformersInfineon Technologies and DG Matrix, an expert in ...13769Industry NewsPartnership for SiC-based Solid-State TransformersInfineon Technologies and DG Matrix, an expert in Solid-State Transformer (SST) solutions, are partnering to enhance the efficiency of power conversion required to connect AI data centers and industrial power applications to the public grid. As part of the collaboration, DG Matrix will source latest-generation silicon carbide (SiC) technology from Infineon for use in its Interport&trade; multi-port solid-state transformer platform. A solid-state transformer replaces conventional copper and iron-based transformers. It features higher efficiency, significantly greater power density (smaller size and lower weight) and improved scalability. Compared to conventional transformers, SSTs are up to 14 times smaller and 40 times lighter. SSTs enable direct power conversion from the medium-voltage levels supplied by the grid to the low voltages required by applications such as AI data centers, electric vehicle (EV) charging infrastructure, renewable energy systems and industrial microgrids. Infineon expects that the global semiconductor market volume for SSTs could reach up to one billion US dollars in the next five years.24.03.2026 07:00:00Marnews_2026-04-01_2.jpg\images\news_2026-04-01_2.jpghttps://www.infineon.com/press-release/2026/infgip202603-075infineon.com
GaN-based BLDC Motor Drive Evaluation BoardEfficient Power Conversion (EPC) introduced the EP...13783Product ReleaseGaN-based BLDC Motor Drive Evaluation BoardEfficient Power Conversion (EPC) introduced the EPC91121 motor drive inverter evaluation board, built around the Gen-7 EPC2366 40 V eGaN&reg; power transistor. Measuring 79 mm &times; 80 mm, the EPC91121 is engineered for rapid prototyping of motor drive architectures in applications such as drones, robotics, industrial automation, handheld power tools, and other compact electromechanical systems where high efficiency and power density are critical. The EPC91121 is a complete three-phase inverter solution capable of delivering up to 70 A<sub>peak</sub> (50 A<sub>RMS</sub>) output current from input voltages ranging between 18 V and 30 V, making it well-suited for battery-powered systems operating around a 24 V supply. The board integrates the key functions required for a motor drive inverter, including gate drivers, housekeeping power supplies, voltage and temperature monitoring, and current sensing. High-bandwidth current sensing on all three phases supports measurements up to &plusmn;125 A, while phase and DC-bus voltage sensing provide the feedback needed for precise monitoring and motor-control techniques such as field-oriented control (FOC) and space-vector PWM. Additional features include shaft encoder and Hall-sensor interfaces and multiple test points, simplifying system integration, measurement, and debugging during development. At the heart of the design is the 40 V EPC2366 Gen 7 eGaN FET, featuring an on-resistance of 0.84 m&#8486;, enabling efficient power conversion and fast switching performance. The evaluation platform supports PWM switching frequencies up to 150 kHz, significantly higher than typical silicon-based motor drives. This capability allows engineers to reduce magnetic component size, minimize switching losses, and improve overall system responsiveness.23.03.2026 14:30:00Marnews_2026-04-01_16.jpg\images\news_2026-04-01_16.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3275/epc-introduces-at-apec-2026-the-epc91121-bldc-motor-drive-evaluation-board-using-epc%e2%80%99s-seventh-generation-gan-technologyepc-co.com
Power Modules with increased Power DensityTexas Instruments (TI) unveiled isolated power mod...13782Product ReleasePower Modules with increased Power DensityTexas Instruments (TI) unveiled isolated power modules, helping enable increased power density, efficiency and safety in applications ranging from data centers to electric vehicles (EVs). The UCC34141-Q1 and UCC33420 isolated power modules use TI’s IsoShield&trade; technology, a proprietary multichip packaging solution that achieves up to three times higher power density than discrete solutions in isolated power designs. The IsoShield technology copackages a planar transformer and an isolated power stage, offering functional, basic and reinforced isolation capabilities. It enables a distributed power architecture, helping manufacturers meet functional safety requirements by avoiding single-point failures. The result is compact packaging while delivering up to 2 W of power, enabling designs for automotive, industrial and data center applications that require reinforced isolation. Evaluation modules, reference designs and simulation models are also available.23.03.2026 13:30:00Marnews_2026-04-01_15.png\images\news_2026-04-01_15.pnghttps://www.ti.com/about-ti/newsroom/news-releases/2026/2026-03-23-ti-unveils-high-performance-isolated-power-modules-to-advance-power-density-in-data-centers-and-evs.htmlti.com
Isolation and Power Modules for OscilloscopesYokogawa Test & Measurement introduced the 720252 ...13781Product ReleaseIsolation and Power Modules for OscilloscopesYokogawa Test & Measurement introduced the 720252 1 MS/s 16-bit isolation module, featuring wide-range DC offset-adjust capability, and the 720301 power measurement module, delivering adequate DC/AC waveform accuracy. An evolution of the existing 701251, the 720252 covers a wider offset adjustment range than general digital oscilloscopes, enabling precise measurement of even small DC voltages and current changes from batteries or sensors. Its offset adjustment function is capable of cancelling a broad spectrum of DC bias, such as battery voltage, DC voltage, and DC current. The module also enables the simultaneous observation of DC levels and microvoltage fluctuations, as low as 1 mV/div for battery applications. In its Hi Z (&gt;1 G&#8486;) input impedance mode the 720252 is capable of reducing the loading effect of the input circuit on a battery cell. Providing an all-in-one solution that correlates power consumption and generation with parameters including temperature, strain, acceleration, and sound, the module features one direct voltage input and one current sensor input, integrating with the power analysis functions of the DL950 or SL2000 for high accuracy in measuring DC and AC voltage/current waveforms. These features are supported by a user-defined measurement period for power calculations (from 0.1 ms), cycle-by-cycle power calculations, and trigger functions on power measurement parameters and harmonic orders.23.03.2026 12:30:00Marnews_2026-04-01_14.jpg\images\news_2026-04-01_14.jpghttps://tmi.yokogawa.com/de/news/press-releases/2026/yokogawa-test-measurement-introduces-new-isolation-and-power-modules-with-greater-dc-offset-capabilities-and-waveform-accuracy/tmi.yokogawa.com
Power Electronics, Machines and Drives EventPEMD Global 2026 will take place on 13–15 April 20...13774Event NewsPower Electronics, Machines and Drives EventPEMD Global 2026 will take place on 13–15 April 2026 in London. The event is renowned for bringing together academics and industry experts to transform research into real world engineering solutions. Join the conference that drives innovation across the electrical and power engineering landscape and be part of the conversations shaping the future of the electrical revolution.23.03.2026 12:00:00Marnews_2026-04-01_7.jpg\images\news_2026-04-01_7.jpghttps://pemd.theiet.org/pemd.theiet.org
GaN Devices for Flyback Topology up to 440 WPower Integrations introduced a flyback solution e...13777Product ReleaseGaN Devices for Flyback Topology up to 440 WPower Integrations introduced a flyback solution extending the power range of flyback converters to 440 W, well beyond the limits that traditionally required more complex resonant and LLC topologies. The TOPSwitchGaN&trade; flyback IC family unites the company’s PowiGaN&trade; technology with its TOPSwitch&trade; IC architecture. This solution aims to reduce complexity, eliminate heat sinks in many cases, shorten design time, improve manufacturability and lower total system cost. TOPSwitchGaN ICs provide 92 percent efficiency across the load range, from 10 percent to 100 percent load, and clearly beats ErP regulations at less than 50 mW power consumption for standby and off modes. The device does this without the need for synchronous rectification. PowiGaN switches deliver much lower R<sub>DS(ON)</sub> than silicon, significantly increasing the power capability of flyback converters. These devices incorporate 800 V PowiGaN switches which can operate at switching frequencies of up to 150 kHz. No-load consumption is well below 50 mW at 230 V<sub>AC</sub> including line sense, and up to 210 mW of output power is available for 300 mW input at 230 V<sub>AC</sub> to run housekeeping functions when units are in stand-by mode. These ICs are available in two styles. For ultra-slim designs, low profile eSOP&trade;-12 surface mount packaging enables 135 W (85 – 265 V<sub>AC</sub>) to be delivered without a heatsink for applications such as appliances. The vertical orientation of the eSIP&trade;-7 package minimizes PCB footprint and has a thermal impedance equivalent to a TO-220-packaged part. Several reference design materials are available.23.03.2026 08:30:00Marnews_2026-04-01_10.jpg\images\news_2026-04-01_10.jpghttps://investors.power.com/news/news-details/2026/Power-Integrations-Extends-Flyback-Topology-to-Enable-440-W-Offering-Simpler-Alternatives-to-Resonant-Power-Designs/default.aspxpower.com
Half-Bridge 1200 V MOSFET ModulesSemiQ has launched the QSiC&trade; Dual3, a family...13795Product ReleaseHalf-Bridge 1200 V MOSFET ModulesSemiQ has launched the QSiC&trade; Dual3, a family of 1200 V half-bridge MOSFET modules for motor drives in data center cooling systems, grid converters in energy storage systems, and industrial drivers. The family enables the creation of power converters and includes an optional parallel Schottky barrier diode to further reduce switching losses in high-temperature environments. Two of the family’s six devices have an R<sub>DS(on)</sub> of just 1 m&#8486; and a power density of 240 W/in&sup3; from its 62 x 152 mm package. The QSiC Dual3 has been developed to enable the replacement of IGBT modules with minimal redesign, with all MOSFET die having been screened using wafer-level gate-oxide burn-in tests exceeding 1,450 V.23.03.2026 08:30:00Marnews_2026-04-15_11.jpg\images\news_2026-04-15_11.jpghttps://semiq.com/1200-v-qsic-dual3-modules-enable-power-converters-with-industry-leading-conversion-efficiency-and-power-density/semiq.com
600 V Super Junction Power MOSFETsToshiba Electronics has added the DTMOSVI 600 V HS...13802Product Release600 V Super Junction Power MOSFETsToshiba Electronics has added the DTMOSVI 600 V HSD (High-Speed Diode) N-channel power MOSFETs to the DTMOSVI 600 V Series featuring a super junction structure. The seven additional products are available in TO-247, TOLL and DFN8&times;8 packages, providing engineers with options that balance power handling, thermal performance, switching efficiency, and system miniaturization capabilities for diverse application needs. A product highlight is the TK058V60Z5, which achieves an drain-source on-resistance (R<sub>DS(ON)</sub>) of 50 m&#8486; (typ.) in a DFN8&times;8 package. Applications include switched-mode power supplies (SMPS) for data center servers, uninterruptible power supplies (UPS), and photovoltaic power conditioners. These products employ lifetime control technology, which intentionally introduces defects into the diode to enhance carrier recombination speed. This technique enhances the reverse-recovery performance of the body diode, a critical requirement for bridge and inverter circuit applications. Compared to Toshiba’s existing DTMOSVI 600 V series without a built-in high-speed recovery diode, the reverse recovery time (t<sub>rr</sub>) has been reduced by approximately 60 %, and the reverse recovery charge (Q<sub>rr</sub>) by approximately 85 % (measurement conditions: V<sub>DD</sub> = 400 V, V<sub>GS</sub> = 0 V, I<sub>DR</sub> = 20 A, -di<sub>DR</sub>/dt= 100 A/&mu;s, T<sub>a</sub> = 25 °C). Both G0 SPICE and G2 SPICE models are available as well as an online circuit simulator.19.03.2026 15:30:00Marnews_2026-04-15_18.jpg\images\news_2026-04-15_18.jpghttps://toshiba.semicon-storage.com/eu/company/news/2026/03/mosfet-20260319-1.htmltoshiba.semicon-storage.com
Distributor and Semiconductor Manufacturer cooperate on holistic Design SuiteDigiKey announces the availability of an enhanced ...13792Industry NewsDistributor and Semiconductor Manufacturer cooperate on holistic Design SuiteDigiKey announces the availability of an enhanced eDesignSuite experience, developed through a collaboration with STMicroelectronics (ST) and Ultra Librarian. The tool environment allows engineers to design, simulate, refine and confidently validate their projects using ST components and to purchase their entire bill of materials (BOM) directly from DigiKey in a few steps. The eDesignSuite, developed by ST, is a free, publicly accessible, no-license-required online design platform that provides a unified workflow for power management, signal conditioning, NFC/RFID applications and other design domains. The collaboration with DigiKey and Ultra Librarian expands the platform’s capabilities by tightly integrating component models, simulation flows, BOM management and multi-CAD exports. The eDesignSuite experience now also provides e.g. the following capabilities: Integrated thermal and electrical simulation support through SIMPLIS/SIMetrix, enabling deeper performance verification and design confidence. Real-time BOM refinement with live impact analysis, allowing engineers to immediately see how parameter changes affect design choices and performance. Seamless export of schematics and BOMs to multiple CAD environments, including OrCAD, Altium and Eagle. Application-specific design support, including power management design, thermal-electrical simulation, signal conditioning and NFC/RFID calculators.19.03.2026 13:00:00Marnews_2026-04-15_8.jpg\images\news_2026-04-15_8.jpghttps://www.digikey.com/en/news/press-releases/2026/march/digikey-collaborates-with-stmicroelectronics-and-ultra-librariandigikey.com
Full-Brick 48 V AC/DC Supply with up to 94 % Peak EfficiencyAdvanced Energy Industries has extended its range ...13799Product ReleaseFull-Brick 48 V AC/DC Supply with up to 94 % Peak EfficiencyAdvanced Energy Industries has extended its range of AIF full-brick board-mounted AC/DC power supplies for telecom and industrial applications with the AIF13WAC, 48 V 600 W, with a peak efficiency of up to 94 %. The AIF13WAC integrates full digital control and monitoring (via PMBus) and active current sharing along with internal inrush limiting functionality. Compared to the previous generation, the AIF13WAC increases output power by 20 % in the same form-factor and therefore is compatible with all accessories created for previous generations, including case-kits, heatsinks and EMI filters. For contact-cooled, fanless applications such as IP-sealed designs, there is now an upgrade path to deliver greater power than the previous generation of 500 W products. The AIF13WAC accepts a input voltage range of 90 to 264 V<sub>AC</sub>, and delivers a 13 A, 48 V<sub>DC</sub> nominal output alongside a 10 V (250 mA) auxiliary output. It can run with up to three units in parallel. The input EMI filter, hold-up capacitors, and output capacitors are the only external components required for the realization of a successful application design.19.03.2026 12:30:00Marnews_2026-04-15_15.jpg\images\news_2026-04-15_15.jpghttps://www.advancedenergy.com/en-us/about/news/press/advanced-energy-launches-aif13wac,-600-w-full-brick-48-v-ac-dc-supply-with-94-efficiency/advancedenergy.com
Report on GaN Semiconductor Reliability and RobustnessEfficient Power Conversion (EPC) has released its ...13789Industry NewsReport on GaN Semiconductor Reliability and RobustnessEfficient Power Conversion (EPC) has released its Phase 18 Reliability Report, providing insights into eGaN device reliability. The report builds on previous work by closing the gap between lab-generated reliability testing and real-world device performance across mission profiles. It introduces additional methodologies to better predict device lifetime under application-specific stress conditions, shaped through close collaboration with customers and supported by peer-reviewed research and international conference publications. The report emphasizes the significance of comprehending the fundamental wear-out mechanisms in GaN HEMTs and presents a quantitative methodology for estimating the overall device lifetime based on the predominant stress conditions experienced during operation. The methodology allows for more accurate lifetime predictions across a wide range of applications by combining different stress factors, like voltage, current, temperature, and duty cycles. Phase 18 is similar to earlier reports, but it goes much deeper into the main wear-out mechanisms. These include the reliability of gates in pGaN structures, the ability to handle stress and overvoltage (robustness), the maximum current density, and the wear-out of thermomechanical devices in both chip-scale and QFN-packaged formats. The report also looks at reliability in dynamic switching conditions and high-frequency operation, which gives us a better idea of how things work in real life. In addition, the report introduces mission-specific reliability evaluations, including motor drive applications characterized by rapid current transients and varying load conditions. A customized testing methodology is presented to emulate these application-specific stress profiles, demonstrating the robustness of EPC’s GaN technology under such conditions.19.03.2026 10:00:00Marnews_2026-04-15_5.jpg\images\news_2026-04-15_5.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3274/epc-co.com
Power Modules designed for harsh EnvironmentsMicrochip Technology announced its BZPACK mSiC&reg...13778Product ReleasePower Modules designed for harsh EnvironmentsMicrochip Technology announced its BZPACK mSiC&reg; power modules, designed to meet HV-H3TRB (High Humidity High Voltage High Temperature Reverse Bias) standards. Available in topologies including half-bridge, full-bridge, three-phase and PIM/CIB configurations, they are suited for deployments in industrial and renewable energy applications. BZPACK modules feature a baseplate-less design with Press-Fit, solderless terminals and optional pre-applied Thermal Interface Material (TIM). The MB and MC families of mSiC MOSFETs are targeted towards both industrial and automotive applications, with AEC-Q101 qualified options available. These devices support common gate-source voltages V<sub>GS</sub> &ge; 15 V and are available in TO-247-4 Notch and die form (waffle pack).19.03.2026 09:30:00Marnews_2026-04-01_11.jpg\images\news_2026-04-01_11.jpghttps://www.microchip.com/en-us/about/news-releases/products/new-bzpack-msic-power-modules-designed-for-demanding-applicationsmicrochip.com
Production Site in SingaporeWevo is expanding its presence in the Asia-Pacific...13788Industry NewsProduction Site in SingaporeWevo is expanding its presence in the Asia-Pacific region with a production site in Singapore. Located in the Tuas industrial area, the facility will serve as a key hub for supplying customers with locally manufactured polyurethane systems that offer proven solutions across a wide range of industries. This facility will feature identical production processes and quality standards to those of the company’s headquarters in southern Germany. In addition to a fully integrated production line, the building in the Tuas industrial area also offers ample storage and packaging capacity. The start of production is scheduled for the third quarter of 2026. The initial focus will be on the polyurethane portfolio, including polyurethane potting compounds, adhesives and sealants for electronics manufacturing – for instance through dispensing under atmospheric pressure or vacuum. Wevo products protect sensitive components against chemicals, vibration, foreign matter, dust, humidity and high temperatures.19.03.2026 09:00:00Marnews_2026-04-15_4.jpg\images\news_2026-04-15_4.jpghttps://www.wevo-chemie.de/en/news-press/detailpage/new-polyurethane-production-sitewevo-chemie.de
PCIM Europe 2026 puts AI in the SpotlightFrom 9 to 11 June 2026, the PCIM Expo & Conference...13770Event NewsPCIM Europe 2026 puts AI in the SpotlightFrom 9 to 11 June 2026, the PCIM Expo & Conference will once again take place in Nuremberg/Germany. With over 650 exhibitors and more than 500 presentations, this power electronics event will offer a comprehensive program for trade visitors. With the new AI & Data Centers Stage, this year’s trade fair and conference program will focus on the topic of artificial intelligence and data centers for the first time. The escalating energy needs of modern data centers are driving demand for high-performance, energy-efficient, and sustainable solutions. With the AI & Data Centers Stage, the PCIM Expo 2026 places a distinct emphasis on two of the most important future trends in power electronics. This stage brings together expert presentations and best practices addressing the growing influence of artificial intelligence and the escalating energy demands of modern data centers. PCIM will cover the entire power electronics value chain, ranging from power semiconductors, test and measurement technologies, and automation solutions to materials for different fields of application, including the aviation industry. Last year the event welcomed 685 exhibiting companies, 16,500 visitors, and more than 800 conference participants from the realms of science and industry.19.03.2026 08:00:00Marnews_2026-04-01_3.JPG\images\news_2026-04-01_3.JPGhttps://pcim.mesago.com/nuernberg/en/press/press-releases/pcim-press-releases/pressekonferenz-munich.htmlpcim.mesago.com
New Date for PCIM IndiaThe PCIM Asia New Delhi Conference has been postpo...13772Event NewsNew Date for PCIM IndiaThe PCIM Asia New Delhi Conference has been postponed by one day and will now take place from 10 to 11 December 2026 at the Yashobhoomi Exhibition and Convention Centre (IICC) in New Delhi. This adjustment was made due to organizational conditions and enables the conference to be executed even better. Following its debut last year, the event is returning to India and inviting scientists, industry experts and emerging talent from industry and research to submit abstracts on current topics in power electronics. The call for papers is open until 21 May 2026.18.03.2026 10:00:00Marnews_2026-04-01_5.jpg\images\news_2026-04-01_5.jpghttps://www.pcim.in/pcim.in
Reference Designs for Three-Phase Inverters based on SiC Power ModulesROHM has released reference designs named "REF6800...13780Product ReleaseReference Designs for Three-Phase Inverters based on SiC Power ModulesROHM has released reference designs named "REF68005", "REF68006", and "REF68004" for three-phase inverter circuits featuring EcoSiC&trade; brand SiC molded modules "HSDIP20", "DOT-247", and "TRCDRIVE pack&trade; " on ROHM’s website. Designers can use the data provided in these reference designs to create the drive circuit boards. When combined with ROHM’s SiC modules, these designs help reduce the person-hours required for device evaluation. The designs support output power levels up to the 300 kW class. Three types of SiC modules compatible with these reference designs are already available for purchase through online distributors such as DigiKey and Farnell. Several support resources, including simulation and thermal design support, are available to facilitate quick evaluation and implementation of the products. ROHM’s comprehensive solutions can provide valuable assistance in component selection.17.03.2026 11:30:00Marnews_2026-04-01_13.jpg\images\news_2026-04-01_13.jpghttps://www.rohm.com/news-detail?news-title=2026-03-17_news_reference-design&defaultGroupId=falserohm.com
25 V and 80 V MOSFETs meeting AI Server Power DemandsAlpha and Omega Semiconductor (AOS) introduced its...13776Product Release25 V and 80 V MOSFETs meeting AI Server Power DemandsAlpha and Omega Semiconductor (AOS) introduced its AONC40202 25 V MOSFET and AONC68816 80 V MOSFET that are available in DFN 3.3 &times; 3.3 double-sided cooling source-down packaging. The devices are designed to support intermediate bus converter (IBC) DC/DC applications in AI Servers. AONC40202 and AONC68816 feature a top-clip design for the exposed drain contact. The packaging technology used in the AONC40402 25 V and AONC68816 80 V MOSFETs features a large top clip, which enables a thermal resistance rate value of R<sub>thc-top(max)</sub> to be 0.9 °C/W. The AONC40202 has a continuous current capability of up to 405 A, with a maximum junction temperature of 175 ° C.17.03.2026 07:30:00Marnews_2026-04-01_9.jpg\images\news_2026-04-01_9.jpghttps://www.aosmd.com/news/alpha-and-omega-semiconductor-introduces-25v-and-80v-mosfets-state-art-packaging-meetsaosmd.com
DC/DC Converter: Direct Conversion from 800 V to 6 VNavitas Semiconductor announced a DC/DC power deli...13779Product ReleaseDC/DC Converter: Direct Conversion from 800 V to 6 VNavitas Semiconductor announced a DC/DC power delivery board (PDB) powered by GaNFast&trade; technology, enabling direct conversion from 800 V to 6 V in one power stage. This solution eliminates the traditional 48 V intermediate bus converter (IBC) stage within the compute server trays to support NVIDIA AI infrastructure. This 6 V output architecture is said to improve system performance versus other already released PDBs by cutting the VRM 8Voltage Regulator Modules conversion ratio in half. Navitas’s 800 V–6 V DC/DC PDB targets to deliver up to 96.5% peak efficiency at full load with 1 MHz switching frequency, enabling a power density of 2,100 W/in&sup3;. Approximately 20 % thinner than a mobile phone, its profile allows for close integration with the GPU board. The primary side employs 16 &times; 650 V GaNFast FETs in the latest DFN8&times;8 dual-cooled package, configured in a stacked full-bridge. Center-tapped outputs use 25 V silicon MOSFETs. 1 MHz switching enables the use of small passives and planar magnetics.16.03.2026 10:30:00Marnews_2026-04-01_12.jpg\images\news_2026-04-01_12.jpghttps://navitassemi.com/navitas-debuts-revolutionary-800-v-6-v-power-delivery-board-at-nvidia-gtc-2026/navitassemi.com
Positive Trade Show EchoAround 36,000 visitors went to Nuremberg/Germany i...13768Event NewsPositive Trade Show EchoAround 36,000 visitors went to Nuremberg/Germany in order to attend the trade show "embedded world 2026", which took place from 10 to 12 March, 2026. This is a growth of more than 13 percent compared to the previous year. With its range of topics and technical exchanges, the embedded world Conference once again sent a signal about the industry’s strength in 2026. Technical presentations, scientific insights and dialogue between experts were an integral part of the embedded world conference, which is targeted to the developer community. Of course, all these embedded systems need power supplies, and that’s why major power companies showed their solutions in Nuremberg. The next embedded world in Nuremberg will take place from 16 to 18 March 2027.13.03.2026 06:00:00Marnews_2026-04-01_1.jpg\images\news_2026-04-01_1.jpghttps://www.embedded-world.de/en/press/press-releases/2026/03/embedded-world-2026-closing-reportembedded-world.de
200 V MOSFETs in Multiple Standard Power PackagesiDEAL Semiconductor expanded its SuperQ&trade; 200...13775Product Release200 V MOSFETs in Multiple Standard Power PackagesiDEAL Semiconductor expanded its SuperQ&trade; 200V MOSFET portfolio with the iS20M5R5S1T, which is available in the industry-standard TOLL package, and the iS20M6R3S1P, available in the TO-220 package. The iS20M5R5S1T achieves a maximum R<sub>DS(on)</sub> of just 5.5 m&#8486;, while the iS20M6R3S1P delivers a maximum R<sub>DS(on)</sub> of 6.3 m&#8486;. Versions in D2PAK-7L (iS20M5R5S1H) and TOLT (iS20M5R5S1TC) are also planned. Typical applications are e.g. in next-generation power systems and motor-drive applications as well as switched-mode power supplies (SMPS), secondary-side synchronous rectification, and high-current industrial and battery-powered systems. The V<sub>GS(th)</sub> is specified with +/- 0.5V.10.03.2026 06:30:00Marnews_2026-04-01_8.png\images\news_2026-04-01_8.pnghttps://idealsemi.com/industry-lowest-rdson-200v-mosfets-in-multiple-standard-power-packages-available-from-ideal-semiconductor/idealsemi.com
Strengthening its Electrification BusinessDanfoss has acquired 100% ownership of power elect...13754Industry NewsStrengthening its Electrification BusinessDanfoss has acquired 100% ownership of power electronics leader Semikron Danfoss, moving from a joint venture to fully owned subsidiary of Danfoss enabling Danfoss to accelerate the company’s electrification business. As part of the continued portfolio optimization, Danfoss intends to divest their automotive business. Danfoss announces the acquisition of the remaining shares in Semikron Danfoss, increasing its ownership from 62% to 100% and gaining full ownership of the global leader in power electronics. The acquisition reflects Danfoss’ refocused electrification priorities and is aligned with the execution of the LEAP 2030 strategy. "As part of our strategy, LEAP 2030, we are prioritizing investments in high-value opportunities, such as electrification, within our core businesses. The full acquisition of Semikron Danfoss allows us to fully accelerate our investments in technology leadership, in advanced power modules, and industrial-scale power electronics solutions that create maximum value for our customers," said Kim Fausing, President & CEO of Danfoss. With full ownership, Danfoss moves from a joint setup to full autonomy. This strengthens Danfoss’ ability to serve customers with industrial-scale power electronics solutions and sharpens focus on core businesses including industrial drives, renewables, data centers, energy storage solutions, off-highway and construction as well as commercial on-highway vehicles beyond electric passenger cars.09.03.2026 06:00:00Marnews_2026-03-15_1.png\images\news_2026-03-15_1.pnghttps://www.danfoss.com/en/about-danfoss/news/cf/danfoss-strengthens-its-electrification-business-with-full-ownership-of-semikron-danfoss/danfoss.com
1500 V Relays for Energy Storage Systems and EV Fast-ChargersOMRON is extending its contactor-replacement relay...13767Product Release1500 V Relays for Energy Storage Systems and EV Fast-ChargersOMRON is extending its contactor-replacement relay portfolio with the G9KJ to save weight and cost in high-voltage energy storage systems and electric-vehicle fast chargers. With 25 A make current and 5 A carry (0 A break) current, the PCB-mount relays have ratings optimized for pre-charging circuits at DC-link voltage up to 1500 V. As pre-charge control switches, the OMRON G9KJ relays divert capacitive inrush currents through a high resistance to relieve stress on components handling the main charging current, including the main contactor, DC link capacitor, and trip protection. With a critical role in preventing nuisance faults or unwanted system resets, and enhancing long-term reliability of the power stage, G9KJ relays permit greater board integration and faster assembly than traditional contactors. The 37.2 mm &times; 25.5 mm &times; 17 mm type 1A (SPST NO) relays address the growing reliance on high-voltage DC switching capabilities as the energy transition redefines grid infrastructures and life essentials like mobility. The contact resistance is 100 m&#8486; (max.) while the coil power is specified with 530 mW.04.03.2026 13:30:00Marnews_2026-03-15_14.jpg\images\news_2026-03-15_14.jpghttps://components.omron.com/eu-en/products/relays/G9KJcomponents.omron.com
240 W USB-C PD 3.2 Reference Design for Battery-powered Motor Control ApplicationsArrow Electronics and Infineon have announced REF_...13764Product Release240 W USB-C PD 3.2 Reference Design for Battery-powered Motor Control ApplicationsArrow Electronics and Infineon have announced REF_ARIF240GaN, a 240 W USB Power Delivery (PD) 3.2 reference design for battery-powered motor control applications that require high performance and power efficiency in a compact form factor. This design complements the existing portfolio of joint reference design solutions from Arrow and Infineon, supporting the ongoing migration of customer designs to USB-C technology. REF_ARIF240GaN is specifically designed to support the launch of EZ-PD&trade; PMG1-B2, Infineon’s latest USB PD 3.2 controller, featuring up to 240 W USB sink capability and integrated buck-boost functionality in a single package. It provides developers with a ready-to-use platform for implementing high-power USB-C charging alongside efficient motor drive control features. It brings fast charging capabilities for 2- to 12-cell Li-ion battery packs, simplifying the overall design and reducing components count. Motor control functionality is delivered using Infineon’s PSOC C3, a 180MHz Arm Cortex-M33 microcontroller, and 100 V CoolGaN&trade; G5 transistors. Target applications include light electric vehicles (e-bikes, e-scooters and personal mobility devices), along with power tools, vacuum cleaners, kitchen appliances, garden equipment and robotics.04.03.2026 10:30:00Marnews_2026-03-15_11.jpg\images\news_2026-03-15_11.jpghttps://news.fiveyearsout.com/news-releases/news-details/2026/Arrow-Electronics-and-Infineon-Introduce-240W-USB-C-PD-3-2-Reference-Design-for-Battery-powered-Motor-Control-Applications/default.aspxfiveyearsout.com
3D Power Electronics Integration ConferenceThe 3D-PEIM 2026 conference is focused on 3D power...13758Event News3D Power Electronics Integration ConferenceThe 3D-PEIM 2026 conference is focused on 3D power electronics packaging and heterogeneous integration. Sponsored by PSMA and IEEE EPS it will convene researchers, manufacturers, and industry leaders at the Arizona State University Skysong Complex in Phoenix, Arizona, from 16th – 19th November 2026. The event will highlight emerging technologies and manufacturing approaches addressing the performance, reliability, and scalability challenges facing next-generation 3D power electronics heterogeneous integration. The 2026 technical program includes six plenary presentations, seven technical sessions, expert-led tutorials, and poster and industry partner sessions. Topics span the full integration stack, including advanced packaging and 3D integrated modules, thermal management, design modeling and simulation, reliability and failure analysis, power delivery and energy storage, passive components, and materials for advanced packaging. Together, these sessions emphasize both fundamental research and practical implementation for automotive, aerospace, data center, and energy applications. Attendees will be able to participate in guided tours of ASU’s MacroTechnology Works, a manufacturing facility. The site hosts industry-scale capabilities, including a 300 mm Fan-Out Wafer-Level Packaging pilot line. The Call for Papers is now in progress.04.03.2026 10:00:00Marnews_2026-03-15_5.png\images\news_2026-03-15_5.pnghttps://www.3d-peim.org/3d-peim.org
Shenzhen Conference focusing on Power ElectronicsThe PCIM Asia Shenzhen Conference 2026 will focus ...13756Event NewsShenzhen Conference focusing on Power ElectronicsThe PCIM Asia Shenzhen Conference 2026 will focus on the domain of power electronics applications in artificial intelligence (AI) and data centers, and it will be held from 26 – 28 August 2026 at the Shenzhen World Exhibition and Convention Centre. This event bridges industry, academia and research across the full value chain. Held in conjunction with the exhibition, the conference links technology from the research stage to industrial deployment and has become a principal forum for tracking technical developments and building the cross-sector partnerships that carry technology from the lab to the market. Alongside data center infrastructure, the program also addresses the application of AI technologies in other aspects of the power electronics field, from renewable energy control and power quality monitoring to motor drive optimization and electric vehicle systems. The conference covers all areas of the power electronics field, from foundational research and novel technologies through to industry applications, with sessions to be organized under three thematic tracks: Power electronics core technologies, Innovative applications and system integration as well as AI and data centre energy technologies. The latter track is new for 2026 addressing AI applications across power systems, renewable energy, and electric machines. It focuses on power quality monitoring and electric vehicle systems, reflecting the areas of fastest-growing areas of technological development and industry investment. PCIM Asia Shenzhen is jointly organized by Guangzhou Guangya Messe Frankfurt and Mesago Messe Frankfurt.04.03.2026 08:00:00Marnews_2026-03-15_3.jpg\images\news_2026-03-15_3.jpghttps://pcimasia-shenzhen.cn.messefrankfurt.com/shenzhen/en.htmlpcimasia-shenzhen.com
Solid-State Relay for High-Current, High-Isolation ApplicationsLittelfuse launched the CPC1343G OptoMOS&reg; Soli...13763Product ReleaseSolid-State Relay for High-Current, High-Isolation ApplicationsLittelfuse launched the CPC1343G OptoMOS&reg; Solid-State Relay, a normally open (1-Form-A) OptoMOS relay designed for high-reliability switching in demanding industrial, medical, and instrumentation applications. The device combines 900 mA continuous load current, 60 V blocking voltage, and reinforced 5,000 V<sub>RMS</sub> input-to-output isolation designed to meet stringent safety and compliance requirements in a space-saving 4-pin package. Fast switching performance - 4 ms turn-on and 1 ms turn-off - enables precise control, while a maximum LED drive current of 3 mA provides compatibility with TTL and CMOS logic without added interface circuitry. The CPC1343G supports an extended ambient temperature range of –40 °C to +105 °C; it operates with a maximum on-resistance of 0.8 &#8486;. Its solid-state construction eliminates mechanical wear, delivering silent, maintenance-free operation and long-term reliability where electromechanical relays often fall short. The device is offered in both through-hole DIP-4 and surface-mount configurations, simplifying PCB layout and enabling flexible manufacturing options across industrial and medical platforms. The CPC1343G is ideally suited for applications requiring high isolation, fast response, and reliable operation at elevated temperatures, including industrial control systems and automation, medical equipment requiring patient-to-equipment isolation, instrumentation, data acquisition, and multiplexing, automatic test equipment (ATE) as well as utility and smart metering systems.03.03.2026 09:30:00Marnews_2026-03-15_10.jpg\images\news_2026-03-15_10.jpghttps://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2026/littelfuse-launches-cpc1343g-optomos-solid-state-relay-for-high-current-high-isolation-applicationslittelfuse.com
Strategic Semiconductor Manufacturing Partnership in IndiaROHM and Suchi Semicon have established a strategi...13757Industry NewsStrategic Semiconductor Manufacturing Partnership in IndiaROHM and Suchi Semicon have established a strategic semiconductor manufacturing partnership in India. By combining ROHM’s device technology expertise with Suchi Semicon’s manufacturing capabilities and operational execution, the companies aim to build a reliable and scalable manufacturing framework aligned with evolving industry needs. The collaboration aims to enhance supply chain resilience and provide customers with trusted manufacturing solutions. Specifically, ROHM is considering the outsourcing of back-end processes for power devices and IC products to Suchi Semicon and has begun technical evaluations toward potential mass production shipments starting in 2026. Through these efforts, ROHM aims to build, in collaboration with Suchi Semicon, an early-stage manufacturing framework in India that aligns with the expected industry ramp-up in the coming years. Furthermore, ROHM and Suchi Semicon will share a roadmap to expand the range of locally manufactured packages.03.03.2026 09:00:00Marnews_2026-03-15_4.jpg\images\news_2026-03-15_4.jpghttps://www.rohm.com/news-detail?news-title=2026-03-03_news_suchi&defaultGroupId=falserohm.com
Full ISO/IEC 17025 Accreditation for AC Calibration Services achievedThe in-house calibration laboratory of Danisense h...13755Industry NewsFull ISO/IEC 17025 Accreditation for AC Calibration Services achievedThe in-house calibration laboratory of Danisense has achieved full ISO/IEC 17025 accreditation for AC calibration services. This follows the laboratory’s ISO/IEC 17025 accreditation for DC current transducer calibration up to 21 kA, obtained in September 2022. This calibration laboratory is now equipped to handle e. g. DC calibration from 1 A to 21 kA as well as AC calibration (53 Hz) from 1 A to 1.2 kA for gain error and phase shift. This capability enables the calibration of a range of current transducers with either current or voltage outputs, supporting applications across power electronics, energy, automotive, rail, and industrial sectors. Danisense’s standard AC calibration report is performed at 10%, 25%, 40%, 55 %, 70 %, 85 % and 100 % of nominal AC current. The DC standard calibration is performed at +/- 10 %, +/- 25 %, +/- 40 %, +/- 55 %, +/- 70 %, +/- 85 %, +/- 100 % of nominal DC current. Results are presented with and without offset, with linearity analysis and statement of conformity (for Danisense transducers only) on all test points. Custom calibration points are also available. The service operates with typical lead times of approximately 10 working days, while accepting and calibrating both Danisense as well as third-party AC and DC current transducers. Customers receive a DANAK-accredited calibration certificate, ensuring that every calibration report fully complies with ISO/IEC 17025 requirements and provides complete confidence in measurement traceability and quality. All calibration services can be booked through the company’s online calibration portal, which provides e. g. with regular online and email updates during the calibration process, calibration reports, detailed order tracking etc.03.03.2026 07:00:00Marnews_2026-03-15_2.jpg\images\news_2026-03-15_2.jpghttps://danisense.com/danisense.com
AC/DC Power SuppliesThe TAD150 series AC/DC power supply from P-DUKE i...13760Product ReleaseAC/DC Power SuppliesThe TAD150 series AC/DC power supply from P-DUKE is designed for industrial applications, featuring specific switching topology and high-efficiency conversion. It provides 130 W (natural convection) or 150 W (forced air cooling) continuously, with up to 200 W peak power, which makes it well-suited for surge-starting and intermittent high-power applications. The devices comply with IEC/EN/UL 62368-1 safety standards and offer reinforced insulation with a 3000 V<sub>AC</sub> input-to-output isolation voltage while meeting EN55032 Class B emissions tests and comprehensive EMI/EMS testing. For high-altitude applications, the TAD150 includes an OVC III (2000 m) option. Its temperature range spans from -40 °C to +85 °C. With synchronous rectification technology it achieves efficiencies of 92-94 % and a power factor of 0.95, meeting EN61000-3-2 Class D standards. Its no-load power consumption of 0.2 W complies with energy-saving regulations. Available in Open Type, Enclosed Type, and Din Rail Type, the TAD150 supports several connector options (Molex, JST, Terminal Block) and operates with an input voltage range from 85-264 V<sub>AC</sub> / 88-370 V<sub>DC</sub> for global compatibility. The TAD150 includes multiple protections: Overvoltage Protection (110-135 % V<sub>nom</sub>), Overload Protection (160 % rated), Short Circuit Protection (Hiccup mode), and Overtemperature Protection (125 °C), while the MTBF is 724,500 hours (MIL-HDBK-217F, 25 °C full load). Typical applications are Programmable Logic Controllers, Motor Drive Systems, Electromagnetic Valve Control, Communication Equipment, Testing and Measurement. Output voltages are 12, 15, 18, 24, 28, 36, 48 and 54 V<sub>DC</sub>.01.03.2026 06:30:00Marnews_2026-03-15_7.png\images\news_2026-03-15_7.pnghttps://www.pduke.com/news_detail28_207.htmpduke.com
GaN Half-Bridge Solutions including DriversInfineon expands its CoolGaN&trade; portfolio with...13761Product ReleaseGaN Half-Bridge Solutions including DriversInfineon expands its CoolGaN&trade; portfolio with the CoolGaN Drive HB 600 V G5 product family. The four devices – IGI60L1111B1M, IGI60L1414B1M, IGI60L2727B1M, and IGI60L5050B1M – integrate two 600 V GaN switches in a half-bridge configuration together with integrated high- and low-side gate drivers and a bootstrap diode, delivering a compact, thermally optimized power stage. By bringing key functions into one optimized package, the family lowers external component count, eases PCB layout challenges typically associated with fast-switching GaN and helps designers shorten development cycles while achieving the core advantages of GaN technology: higher switching frequencies, lower switching and conduction losses, and greater power density. Targeting low-power motor drive systems and switched-mode power supplies, the integrated half-bridge enables smaller magnetics and passive components, higher efficiency across operating conditions, and improved dynamic performance in space-constrained designs. The device achieves switching with a 98 ns propagation delay. For simplified system integration, it offers a PWM input compatible with standard logic levels and operates from a single 12 V gate driver supply, while fast UVLO recovery helps ensure robust behavior during start-up and transient supply events. The products are housed in a 6 x 8 mm&sup2; TFLGA-27 package with exposed pads, enabling efficient heat spreading and supporting heatsink-less designs in many applications.26.02.2026 07:30:00Febnews_2026-03-15_8.jpg\images\news_2026-03-15_8.jpghttps://www.infineon.com/market-news/2026/infpss202602-054infineon.com
Programmable AC/DC Power Supply SeriesTDK Corporation has expanded the 3000 W TDK-Lambda...13753Product ReleaseProgrammable AC/DC Power Supply SeriesTDK Corporation has expanded the 3000 W TDK-Lambda HWS3000 programmable AC/DC power supply series with the HWS3000GT4 model. Now available with a wide-range 340 – 528 V AC three-phase input option its nominal output voltages and output currents remain fully programmable from zero up to their maximum ratings. Output programming can be achieved using a serial RS485 interface (MODBus protocol) or analog 1 - 5 V or 4 - 20 mA signals, enabling straightforward connection to PLCs, automation systems, and test equipment. These devices also feature a variable speed fan with 45 dB audible noise at &lt;70 % load, and a 25 ºC typical ambient temperature. The HWS3000 series can be used in a wide range of applications, including test and measurement, semiconductor fabrication, RF amplifiers, laser machining, printing, and industrial equipment. Six nominal output voltages, 24 V, 48 V, 60 V, 80 V, 130 V, and 250 V, can be programmed to cover voltages from 0 – 300 V. Available in a 270 &times; 150 &times; 61 mm&sup3; case size, up to three units can be connected in series or up to ten in parallel, offering scalable solutions for higher voltage or current requirements. The digitally programmable voltage slew rate, along with monitoring functions such as cumulative operating time, fault logs, and product identification, enhances system control and diagnostics.24.02.2026 14:30:00Febnews_2026-03-01_17.jpg\images\news_2026-03-01_17.jpghttps://www.emea.lambda.tdk.com/uk/news/article/21481lambda.tdk.com
Surge Protection DeviceBourns announced its GDT225HE Series High Voltage,...13765Product ReleaseSurge Protection DeviceBourns announced its GDT225HE Series High Voltage, High Energy Gas Discharge Tube (GDT) Arresters. Providing surge protection performance these GDTs are optimized for high-energy AC/DC power systems, including EV charging infrastructure, Battery Energy Storage Systems (BESS) and industrial power conversion equipment. These systems, in particular, are known to experience commutation or fault insertion events. It is the series’ ability to safely conduct prolonged high thermal (I&sup2;t) energy during transient conditions that makes it well-suited for system-level surge and fault protection, equipotential bonding and for lightning-prone designs where high-energy discharge must be safely diverted and controlled. The Bourns GDT225HE Series features a broad DC Breakdown Voltage (DCBV) from 1000 to 2000 V, I<sub>n</sub> 40 kA (Nominal Discharge Current) and I<sub>max</sub> 60 kA (Maximum Discharge Current) ratings on an 8/20 &mu;s waveform to deliver protection for lightning-prone and high-energy applications. These high-power GDTs provide a space-saving alternative to bulky surge protection solutions. This series is also available in various lead shapes to fit in different configuration specifications; it is UL Recognized, ITU-T K.12 tested and RoHS compliant.24.02.2026 11:30:00Febnews_2026-03-15_12.jpg\images\news_2026-03-15_12.jpghttps://www.bourns.com/news/press-releases/pr/2026/02/24/bourns--high-voltage--high-energy-gdt-series-offers-industry-leading-surge-protection-performance-in-a-compact-packagebourns.com
Intensified Distribution Agreement on Power SuppliesRECOM Power and electronics distributor Bürklin El...13741Industry NewsIntensified Distribution Agreement on Power SuppliesRECOM Power and electronics distributor Bürklin Elektronik are intensifying their collaboration, which has been in place for more than twelve years. The aim of expanding the partnership is to provide customers even faster and more comprehensively with DC/DC and AC/DC power supply solutions from RECOM for industrial, medical, and railway applications. "The intensified collaboration with Bürklin is an important step for us in order to serve our customers even more precisely and quickly," says Uwe Frischknecht, Managing Director Sales EMEA at RECOM. "Bürklin has a strong market presence and outstanding logistics expertise, which perfectly complements our technology portfolio."24.02.2026 10:00:00Febnews_2026-03-01_5.jpg\images\news_2026-03-01_5.jpghttps://recom-power.com/en/knowledgebase/newsroom/rec-n-recom-and-b%C3%BCrklin-significantly-expand-their-partnership-458.html?4recom-power.com
Evaluation Board for Humanoid Robot Joint ApplicationsEfficient Power Conversion (EPC) has released the ...13748Product ReleaseEvaluation Board for Humanoid Robot Joint ApplicationsEfficient Power Conversion (EPC) has released the EPC91122, a 3-phase BLDC motor drive inverter evaluation board specifically engineered for humanoid robot joint applications. Featuring EPC’s EPC33110 3-phase ePower&trade; Stage module, the EPC91122 delivers up to 20 A<sub>RMS</sub> (28 A<sub>peak</sub>) phase current in an adequate form factor optimized for space-constrained robotic joints, integrating all key functions of a complete motor drive inverter, including a microcontroller, motor shaft angular sensor, housekeeping power supplies, accurate voltage and current sense. The EPC91122 is mechanically optimized to fit directly inside humanoid joint motors. The complete GaN inverter occupies a 32 mm diameter inner circle, surrounded by a 55 mm external frame that supports mechanical mounting and lab connectivity. This design lets the inverter fit inside the motor chassis, which lowers loop inductance and makes the power density and dynamic performance higher. The EPC33110 is the main part of the system. It is a three-phase co-packaged module with a maximum voltage of 100 V. It has three monolithic GaN half-bridges with built-in gate drivers, bootstrap circuits, and level shifters. The device has an R<sub>DS(on)</sub> of 11.7 + 13 m&#8486; and can switch at frequencies of up to 150 kHz, which means it may use smaller passive components and respond quickly to changes. The board operates from a wide input range, making it well-suited for battery-powered robotic systems. It integrates all critical subsystems required for a complete motor drive inverter. The EPC91122 comes preprogrammed to operate at 100 kHz PWM with 50 ns dead time, showcasing the high-speed switching capability enabled by GaN technology. Thermal testing under real-world operating conditions confirms the board’s capability for continuous and pulsed operation. Complete design support files, including schematic, bill of materials (BOM), and Gerber files, are available.24.02.2026 09:30:00Febnews_2026-03-01_12.jpg\images\news_2026-03-01_12.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3262/humanoid-robot-joint-motor-control-using-the-epc91122-powered-by-the-epc33110-gan-stageepc-co.com
Joining Forces for Silicon Power Semiconductor for high-voltage ModulesHitachi Energy announced a collaboration to advanc...13738Industry NewsJoining Forces for Silicon Power Semiconductor for high-voltage ModulesHitachi Energy announced a collaboration to advance shared value creation and sustainable growth. Hitachi Energy will incorporate Pakal Technologies’ Insulated Gate Turn-Off (Thyristor), IGTO(t)&trade;, silicon power switch into its portfolio of high-voltage power modules, beginning with devices used in essential applications such as rail, renewables, energy storage, AI, and data center infrastructure. The collaboration addresses one of the most significant challenges in large-scale electrification: reducing energy losses and improving overall efficiency in high-voltage power conversion. By combining Hitachi Energy’s expertise in power module design with Pakal Technologies’ IGTO(t) innovation the collaboration aims to contribute to cumulative daily efficiency gains across energy infrastructure. Together, the companies intend to produce the highest-performing &ge;3.3 kV power semiconductor modules for Hitachi Energy to offer to its large and growing global customer base, delivering higher performance, lower operating costs, and greater long-term reliability across critical electrification projects.24.02.2026 07:00:00Febnews_2026-03-01_2.png\images\news_2026-03-01_2.pnghttps://www.hitachienergy.com/news-and-events/press-releases/2026/02/hitachi-energy-and-pakal-technologies-join-forces-in-breakthrough-silicon-power-semiconductor-for-high-voltage-moduleshitachienergy.com
productronica China 2026 Draws Asia’s Leaders in Intelligent Electronics ManufacturingFrom March 25 to 27, 2026, productronica China 202...13744Event Newsproductronica China 2026 Draws Asia’s Leaders in Intelligent Electronics ManufacturingFrom March 25 to 27, 2026, productronica China 2026 will be held grandly at Halls E1-E5 and W1-W4 of the Shanghai New International Expo Centre. As an important display and exchange platform for the electronic manufacturing industry, this edition will feature over 1,000 exhibitors across its exhibition area of nearly 100,000 square meters. It will focus on the needs of multiple fields, including automobiles, industry, communication electronics, and medical electronics. It aims to present an "innovation feast" covering the entire industrial chain of electronic production to the industry, highlighting smart factories, new energy vehicle technology, and the digital future.22.02.2026 13:00:00Febnews_2026-03-01_8.jpg\images\news_2026-03-01_8.jpghttps://dwz.cn/dm1kDXWYproductronicachina.com.cn
Contract extended ahead of ScheduleInfineon Technologies AG plans to extend the contr...13759PeopleContract extended ahead of ScheduleInfineon Technologies AG plans to extend the contracts of Chief Executive Officer Jochen Hanebeck and Chief Financial Officer Dr. Sven Schneider ahead of schedule. Jochen Hanebeck’s contract is to be extended until the end of March 2032, while Dr. Sven Schneider’s contract is to run until the end of April 2032. Without the planned extension, the contracts would have expired on 1 April 2027 and 1 May 2027, respectively. The Supervisory Board will pass the formal resolution in May. "Infineon Technologies AG is in very capable hands, which is why we are establishing clarity about the company’s long term direction at an early stage," says Dr. Herbert Diess, Chairman of the Supervisory Board of Infineon Technologies AG. "With important investments in technological strength and a consistent focus on competitiveness, Jochen Hanebeck - together with Sven Schneider and the entire Management Board team - has successfully positioned Infineon for the future. The company will continue on this path of profitable growth in the years ahead." "We are determined to seize future opportunities - for example in the fields of artificial intelligence, software defined vehicles and humanoid robotics," says Jochen Hanebeck. "Infineon is exceptionally well positioned to benefit from the defining growth trends of our time. The key to success is the ability to rapidly turn innovation into customer value. I would like to thank the Supervisory Board for its confirmation to continue consistently on this path."19.02.2026 11:00:00Febnews_2026-03-15_6.jpg\images\news_2026-03-15_6.jpghttps://www.infineon.com/press-release/2026/infxx202602-050infineon.com
Automotive SMT Common Mode ChokesThe CMA family of automotive qualified common mode...13766Product ReleaseAutomotive SMT Common Mode ChokesThe CMA family of automotive qualified common mode chokes from Coilcraft are available for current ratings up to 8.2 A. Providing suppression of high frequency common mode noise up to 100 MHz they are suitable for inverters, motor drives, onboard chargers, as well as telecom and industrial applications. The AEC-Q200-qualified surface mount toroids provide isolation (hipot) up to 1500 V<sub>rms</sub>. The CMA series complements the Cx common mode choke series with AEC qualified reliability.18.02.2026 12:30:00Febnews_2026-03-15_13.jpg\images\news_2026-03-15_13.jpghttps://www.coilcraft.com/en-us/products/emi/power-line-common-mode-choke/high-isolation/cma/coilcraft.com
Charles Hosono Appointed CEOPresto Engineering announced the appointment of Ch...13743PeopleCharles Hosono Appointed CEOPresto Engineering announced the appointment of Charles Hosono as Chief Executive Officer. He succeeds Cédric Mayor, who is stepping down to pursue new projects after contributing to the company’s development for nearly 16 years. Charles Hosono brings over 30 years of experience in the global semiconductor industry to Presto, alongside a proven track record of supporting high-growth international companies. He began his career as a radio frequency (RF) integrated circuit design engineer before holding sales and marketing leadership roles at NXP (formerly Philips Semiconductors) and Infineon Technologies. A recognized expert in business growth and organizational structuring, Charles Hosono notably contributed to the success of leveraged buyout operations at Linxens as Global VP of Sales and Marketing and President of the Asia-Pacific region. With a robust international background, Charles spent nearly 15 years in Asia between Singapore and Shanghai, providing him with a global perspective on semiconductor market challenges.18.02.2026 12:00:00Febnews_2026-03-01_7.png\images\news_2026-03-01_7.pnghttps://www.presto-eng.com/news/presto-engineering-appoints-charles-hosono-as-ceo-to-accelerate-ambition-as-europes-leading-asic-one-stop-shoppresto-eng.com
Compact Package for Automotive 40 V/60 V MOSFETsROHM has expanded its lineup of low-voltage (40 V/...13745Product ReleaseCompact Package for Automotive 40 V/60 V MOSFETsROHM has expanded its lineup of low-voltage (40 V/60 V) MOSFETs for automotive applications – such as main inverter control circuits, electric pumps, and LED headlights – by introducing latest products adopting the new HPLF5060 package (4.9 mm &times; 6.0mm). The HPLF5060 package offers a smaller footprint compared to the widely used TO-252 package (6.6 mm &times; 10.0 mm) while enhancing board-mount reliability through the adoption of gull-wing leads. Additionally, the use of copper clip junction technology enables high-current operation, making the HPLF5060 suitable for demanding automotive environments.18.02.2026 06:30:00Febnews_2026-03-01_9.jpg\images\news_2026-03-01_9.jpghttps://www.rohm.com/news-detail?news-title=2026-02-18_news_mosfet&defaultGroupId=falserohm.com
6500 V / 2000 A Press Pack IEGT for HV DC ApplicationsToshiba Electronics launched the ST2000JXH35A, a 6...13747Product Release6500 V / 2000 A Press Pack IEGT for HV DC ApplicationsToshiba Electronics launched the ST2000JXH35A, a 6500 V / 2000 A press pack injection enhanced gate transistor (IEGT) designed for high-voltage converters used in DC power transmission systems, industrial motor-drive equipment and static synchronous compensators (STATCOM). The device uses trench-type IEGT chips. The ST2000JXH35A is able to streamline the design of high-voltage systems. By adopting this 6500 V-rated product, engineers can reduce the number of series-connected devices required in DC power transmission architectures. This reduction in component count directly contributes to the weight reduction and miniaturisation of overall equipment designs. Consequently, these improvements help reduce construction and transportation costs, offering value for offshore converter stations in wind farms, where installation costs and logistical complexity are significant. The product features a press-pack design that supports double-sided cooling and a hermetic sealing structure to ensure the reliability required for long-term industrial operation. In addition to transmission infrastructure, the ST2000JXH35A enables higher voltage ratings and more compact form factors for industrial motor drives and reactive power compensation devices that stabilize power systems.17.02.2026 08:30:00Febnews_2026-03-01_11.jpg\images\news_2026-03-01_11.jpghttps://toshiba.semicon-storage.com/eu/company/news/2026/02/igbt-iegt-20260217-1.htmltoshiba.semicon-storage.com
Record Efficiencies for Tandem Photovoltaic ModulesScientists at the Fraunhofer Institute for Solar E...13739Industry NewsRecord Efficiencies for Tandem Photovoltaic ModulesScientists at the Fraunhofer Institute for Solar Energy Systems ISE have succeeded in constructing two tandem photovoltaic modules with record efficiencies. A III-V germanium PV module with an efficiency of 34.2 percent, incorporating solar cells from AZUR SPACE and anti-reflection structures from temicon, thus becomes "the most efficient solar module in the world", Fraunhofer ISE says. "A III-V silicon PV module achieves an efficiency of 31.3 percent, setting a record in its class, and is based on established, cost-effective silicon technology." A few years ago, researchers at the Fraunhofer ISE achieved a new efficiency record for silicon-based solar cells with a III-V silicon solar cell reaching 36.1 percent. As part of the research project "Mod30plus," they have now, for the first time, realized a small-scale production of these solar cells, adapted for interconnection with shingle technologies. A module produced by the research team in this way, measuring 218 square centimeters, has now achieved an efficiency of 31.3 percent. A 833-square-centimeter tandem module with an efficiency of 34.2 percent was built by a second research team from Fraunhofer ISE as part of the "Vorfahrt" project. It consists of triple III-V germanium cells. Conventional silicon solar cells cannot exceed a physical efficiency limit of 29.4 percent; currently commercially available PV modules already have efficiencies around 24 percent. Both research projects were funded by the German Federal Ministry for Economic Affairs and Energy.17.02.2026 08:00:00Febnews_2026-03-01_3.jpg\images\news_2026-03-01_3.jpghttps://www.ise.fraunhofer.de/en/press-media/press-releases/2026/fraunhoferise-achieves-record-efficiencies-for-tandem-photovoltaic-modules.htmlise.fraunhofer.de
Automotive Grade High Voltage Chip Resistors: Up to 100 MΩStackpole’s RVCA Series is a thick-film, high-volt...13751Product ReleaseAutomotive Grade High Voltage Chip Resistors: Up to 100 M&#8486;Stackpole’s RVCA Series is a thick-film, high-voltage chip resistor family purpose-built to meet the demands of 400 V, 800 V, and higher voltage systems. Designed to simplify high-voltage circuit implementation, RVCA provides engineers with a reliable, compact solution that reduces the need for series stacking while improving long-term stability. The series is automotive grade, AEC-Q200 qualified, and anti-sulfur compliant per EIA-977, ensuring robust performance in harsh, high-stress environments common to EV, industrial, and power electronics applications. The RVCA Series supports voltage ratings up to 3 kV in the 2512 case size, with 0805 and larger packages offering minimum ratings of 400 V. The resistance range spans from 30 k&#8486; to 100 M&#8486; further enables implementation of voltage dividers, sensing networks, bleed circuits, and high-impedance nodes across high-voltage platforms.16.02.2026 12:30:00Febnews_2026-03-01_15.png\images\news_2026-03-01_15.pnghttps://www.seielect.com/news/en/20260216%20rvca.pdfseielect.com
PCIM Conference 2026 – preliminary programThe conference program for PCIM Expo & Conference ...13737Event NewsPCIM Conference 2026 – preliminary programThe conference program for PCIM Expo & Conference 2026 is now online. With over 500 conference presentations and poster presentations, you can expect a high-caliber program covering the entire value chain of the power electronics industry. In addition, the 27 half-day seminars on the two days preceding the conference offer practical insights and in-depth technical knowledge.16.02.2026 06:00:00Febnews_2026-03-01_1.jpg\images\news_2026-03-01_1.jpghttps://pcim.mesago.com/nuernberg/en/conference/program-speakers/program.htmlpcim.mesago.com
Distribution Partnership for Silicon Carbide SolutionsSemiQ has announced a distribution agreement with ...13742Industry NewsDistribution Partnership for Silicon Carbide SolutionsSemiQ has announced a distribution agreement with NAC Semi, a global electronic component design services and distribution company. This partnership is expected to accelerate the adoption of SemiQ’s SiC technology across North America markets, providing engineers with access to high-efficiency power modules, MOSFETs, and Schottky diodes. NAC Semi bridges the gap between catalog houses and large fulfillment distributors by offering "demand creation" services, including dedicated Field Applications Engineer (FAE) support. By adding SemiQ to its line card, NAC Semi enhances its ability to provide comprehensive SiC solutions for applications such as EV charging stations, solar inverters, and high-voltage power supplies.12.02.2026 11:00:00Febnews_2026-03-01_6.jpg\images\news_2026-03-01_6.jpghttps://semiq.com/semiq-establishes-distribution-partnership-with-nac-semi-to-expand-global-reach-for-silicon-carbide-solutions/semiq.com
4 kW DC/DC Converters with 180 – 950 VDC InputThe RECOM RMOD4000 series of plug-and-play DC/DC c...13750Product Release4 kW DC/DC Converters with 180 – 950 V<sub>DC</sub> InputThe RECOM RMOD4000 series of plug-and-play DC/DC converters is able to provide isolated 14 V, 28 V, or 56 V DC network rails from a high input voltage between 180 and 950 V<sub>DC</sub> from traction batteries. Depending on variant and input voltage up to 4 kW is available, while the conversion efficiency is up to 95 %. The output is fully regulated and protected against over-current, over-voltage, over-temperature and short circuits, while the input has under-and over-voltage lockout and active inrush suppression. An isolated CAN J1939 interface is provided to allow control and data monitoring including output voltage adjustment. A separate hardware on/off control (ignition) and HV-interlock-function is included. As an added feature, an integrated OR-ing function is implemented, allowing paralleling of units for redundancy or increased power capability with active current sharing. Operating temperature is -40 °C to +85 °C with no derating. Full reinforced isolation is provided to IEC62477-1, vehicle safety standards ISO6469-3, and ISO 7637 are met, and the EMC standard ECER10 Rev 4 is certified (E-mark). The RMOD4000 series is presented in a water- and dust-proof cast aluminum enclosure to IP67 standard and can be baseplate or water-cooled with integrated coolant ports. Body dimensions are 316 &times; 254 &times; 83 mm&sup3;, and sealed, plug-in connectors are provided for input and outputs. Typical applications are as an on-board DC/DC converter for battery powered on- and off-highway vehicles, such as forklifts, golf carts, AGVs, loaders, tractors, ships, and electric boats, in the areas of marine, material handling, construction, airports, E-mobility and marine systems.11.02.2026 11:30:00Febnews_2026-03-01_14.jpg\images\news_2026-03-01_14.jpghttps://recom-power.com/en/knowledgebase/newsroom/rec-n-4kw-e-mobility-dc!sdc-features-180-950vdc-input-457.html?4recom-power.com
Current Transducers for up to 3200 V and 1500 ADanisense has expanded its DN1000ID current transd...13746Product ReleaseCurrent Transducers for up to 3200 V and 1500 ADanisense has expanded its DN1000ID current transducer product family with the introduction of the DN1000ID-CP02 model, which features a significantly increased creepage and clearance distance of 38 mm, compared with 11 mm for the standard DN1000ID version. In addition, the permissible voltage for uninsulated cables has been raised from 1000 V to 3200 V, making them well-suited for power measurement and power analysis in EV chargers, power inverters, and battery energy storage systems. Additional target applications include EV test benches, particle accelerators, MRI systems and medical scanners, battery testing and evaluation equipment, current calibration systems, and other precision current-sensing applications. The DN1000ID-CP02 device incorporates a removable isolation insert and a 40 mm aperture to accommodate wide cable terminals. The transducer is capable of measuring currents up to 1500 A, with continuous measurement of 1000 A achieved with a linearity error of less than 1 ppm. An over-range capability of 1200 A<sub>RMS</sub> for up to 30 minutes is also supported. Based on Danisense’s closed-loop fluxgate technology, the DN1000ID-CP02 delivers an offset of 5 ppm. Noise performance is claimed to be "best-in-class, with sub-ppm RMS noise across frequencies up to 10 kHz".11.02.2026 07:30:00Febnews_2026-03-01_10.jpg\images\news_2026-03-01_10.jpghttps://danisense.com/products/dn1000id-cp02/danisense.com
GaN Insights eBookThe power electronics industry is undergoing a sig...13724Industry NewsGaN Insights eBookThe power electronics industry is undergoing a significant transformation, driven by the growing adoption of Gallium Nitride (GaN) power solutions. Infineon Technologies has published the 2026 edition of its annual GaN Insights, providing awareness into the world of GaN technology, its applications, and future prospects. According to analysts from Yole, the GaN power semiconductor market is expected to reach almost $3 billion by 2030, marking a 400 % increase compared to the 2025 market. This rapid growth is driven by significant production ramps, which began in 2025, broadening GaN adoption across multiple industries and enabling its penetration into new applications. In fact, the market is expected to grow at a compound annual growth rate (CAGR) of 44 % from 2025 to 2030 (Source: Trend Force), with revenue projections of $920 million in 2026, representing a 58 % growth over 2025 (Source: Yole). In 2026, designers are expected to uncover new uses of GaN bidirectional switches (BDS) beyond solar inverters and EV on-board chargers. Infineon’s high-voltage bidirectional GaN switches feature a common drain design with a double gate structure, leveraging proven Gate Injection Transistor (GIT) technology. This architecture enables the use of the same drift region to block voltages in both directions, resulting in a significantly reduced die size compared to conventional back-to-back arrangements. For instance, utilizing Infineon’s CoolGaN&trade; BDS, which operates up to 1 MHz, solar microinverters deliver 40 % more power in the same-sized inverter while reducing system costs. The GaN Insights eBook is available on Infineon’s website.10.02.2026 09:00:00Febnews_2026-02-15_4.jpg\images\news_2026-02-15_4.jpghttps://www.infineon.com/market-news/2026/infpss202602-047infineon.com
Embedded Silicon CapacitorsEmpower Semiconductor launched three embedded sili...13762Product ReleaseEmbedded Silicon CapacitorsEmpower Semiconductor launched three embedded silicon capacitors (ECAPs&trade;), designed to meet the power integrity demands of next-generation AI and high-performance computing (HPC) processors. These ECAPs include the EC2005P, with 9.34 &mu;F capacitance in a 2 mm &times; 2 mm package; the EC2025P, offering 18.68 &mu;F capacitance in a 4 mm &times; 2 mm package and the EC2006P, providing 36.8 &mu;F capacitance in a 4 mm &times; 4 mm form factor. As AI processors push the limits of performance, power delivery has emerged as a critical constraint. Achieving the required power integrity for extreme current densities and ultrafast transient response is no longer realistic with board-level mounted components; embedding capacitors into the processor substrate is now essential.10.02.2026 08:30:00Febnews_2026-03-15_9.jpg\images\news_2026-03-15_9.jpghttps://www.empowersemi.com/empower-introduces-high-density-embedded-silicon-capacitors-to-advance-next-generation-ai-and-hpc-performance/empowersemi.com
Strategic GaN Technology Licensing and Second Sourcing AgreementEfficient Power Conversion (EPC) announced a compr...13721Industry NewsStrategic GaN Technology Licensing and Second Sourcing AgreementEfficient Power Conversion (EPC) announced a comprehensive licensing agreement with Renesas Electronics Corporation. Under the agreement, Renesas will gain access to EPC’s proven low-voltage eGaN&reg; technology and its established supply-chain ecosystem, accelerating the adoption of high-performance GaN solutions across a broad range of markets. EPC and Renesas will collaborate over the next year to establish internal wafer fabrication capabilities for these products. In addition, Renesas will second-source several of EPC’s GaN devices that are already in mass production, enhancing supply-chain resilience for customers. This alliance expands customer access to GaN technology while providing increased supply assurance through qualified second sourcing. "Together, EPC and Renesas are forming a global alliance to deliver state-of-the-art power efficiency - cutting costs in AI data centers and enhancing autonomous systems. This is an exciting moment for our industry and our company," said Alex Lidow, CEO of EPC.10.02.2026 06:00:00Febnews_2026-02-15_1.jpg\images\news_2026-02-15_1.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3257/epc-announces-strategic-gan-technology-licensing-and-second-sourcing-agreement-with-renesasepc-co.com
10 kW DC/DC Platform delivering 98.5 % EfficiencyNavitas Semiconductor has introduced a 10 kW DC/DC...13736Product Release10 kW DC/DC Platform delivering 98.5 % EfficiencyNavitas Semiconductor has introduced a 10 kW DC/DC power platform delivering up to 98.5 % peak efficiency and 1 MHz switching frequency to support next-generation AI data centers. The all-GaN 10 kW 800 V–to–50 V DC/DC platform employs 650 V and 100 V GaNFast&trade; FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5 % peak efficiency and 98.1% full load efficiency in a full-brick (61 mm &times; 116 mm &times; 11 mm) package, achieving 2.1 kW/in&sup3; power density. The resulting production-oriented platform supports 800 V–to–50 V and +/- 400 V–to–50 V architectures at 10 kW, integrating auxiliary power and control to simplify adoption and enable high–power-density module designs for next-generation HVDC AI data centers.09.02.2026 15:30:00Febnews_2026-02-15_16.jpg\images\news_2026-02-15_16.jpghttps://navitassemi.com/navitas-unveils-breakthrough-10-kw-dc-dc-platform-delivering-98-5-efficiency-for-800-vdc-next-gen-ai-data-centers/navitassemi.com
Magnet-Free E-Motor to Reduce Production CostsCurrent axial flux machines (AFM) meet several pos...13740Industry NewsMagnet-Free E-Motor to Reduce Production CostsCurrent axial flux machines (AFM) meet several positive criteria but are almost exclusively dependent on rare-earth magnets. To avoid the use of those cost-intensive and increasingly scarce resources, the radial flux synchronous reluctance machine (RF-SynRM) is currently considered a sustainable, robust, and overload-capable alternative. In turn, this entails compromises in terms of installation space and torque density. The "NAFTech" project of RWTH Aachen university therefore focuses on the concept of an axial flux synchronous reluctance machine (AF-SynRM) that combines the respective advantages of AFM and RF-SynRM. NAFTech therefore pursues an integrated approach to topology, multi-domain machine design, and production methods, supported by data-based optimization of tolerance chains. During the project, the simulative design of the machine and the suitability of the manufacturing processes will be validated with the aid of specially constructed partial demonstrators. The team says that "a magnet-free motor reduces material costs by up to 50 percent".09.02.2026 09:00:00Febnews_2026-03-01_4.png\images\news_2026-03-01_4.pnghttps://www.pem.rwth-aachen.de/go/id/brigdm?lidx=1#aaaaaaaaabrigekpem.rwth-aachen.de
Isolated Gate Drivers for Automotive ModulesSTMicroelectronics’ STGAP2SA and STGAP2HSA automot...13749Product ReleaseIsolated Gate Drivers for Automotive ModulesSTMicroelectronics’ STGAP2SA and STGAP2HSA automotive-grade, galvanically isolated 4 A gate drivers with 60 ns response time and close part-to-part matching are suitable for IGBTs and silicon MOSFETs operating with a high-voltage rail up to 1200 V. The drivers can sink/source 4 A at up to 26 V for unipolar or bipolar driving. Extending the STGAP series, ST’s industrial and automotive galvanic isolated gate drivers, these AEC-Q100 qualified devices can handle a wide variety of applications throughout conventional, hybrid, and electric vehicles. Typical uses include DC/DC converters, pumps, fans, heaters, e-compressors, and on-board chargers (OBC). Other uses include wallbox and pedestal DC charging systems, as well as industrial inverters and motor drives. Featuring built-in protection, the drivers simplify design and enhance reliability, with under-voltage lockout (UVLO) and an output safe state during power-up and power-down. There is also Miller clamping to prevent induced turn-on and thermal shutdown to prevent operation above maximum safe temperature, automatically resuming when cooled. In addition, a self-monitoring watchdog makes the output safe if communication from the low-voltage side fails and there is a power-saving standby mode, entered by simultaneously holding the inputs high. Both devices meet UL 1577 isolation ratings. The STGAP2SA, in a standard SO-8 package, has transient and surge isolation voltages (V<sub>IOTM</sub>, V<sub>IOSM</sub>) of 4800 V. The STGAP2HSA is compliant with IEC 60747-17 for basic insulation and has 6000 V surge isolation voltage (V<sub>IOSM</sub>), in a wide-body SO-8W package with 8 mm creepage and clearance. A demonstration board is available for each part.07.02.2026 10:30:00Febnews_2026-03-01_13.jpg\images\news_2026-03-01_13.jpghttps://www.st.com/content/st_com/en/campaigns/automotive-industrial-galvanic-isolated-gate-drivers-asp-mcmotdri.htmlst.com
Partner Program launchedWürth Elektronik has launched its partner program ...13726Industry NewsPartner Program launchedWürth Elektronik has launched its partner program to create a dynamic, high-growth innovation ecosystem in the electronics industry. The program was officially presented at a kick-off event at the end of September, where Texas Instruments was presented as the first Premium Partner. The semiconductor manufacturer Nexperia has also signed up as a Silver Partner. The Würth Elektronik partner program is divided into three tiers. Entry is possible with just a non-disclosure agreement, a brand license, and a business model. Based on clearly defined criteria – such as brand commitment, shared growth objectives, and the integration of Würth Elektronik components into their own designs – participating companies can then progressively advance from Entry Level through Silver to Premium Partner status. The program is based on four pillars: technical support, products and tools, marketing support, and knowledge transfer and training. This creates a network that brings together technology leaders, business units, and stakeholders. Partners can unlock new market potential, accelerate product innovation, and offer their customers a seamless one-stop-shop concept.05.02.2026 11:00:00Febnews_2026-02-15_6.jpg\images\news_2026-02-15_6.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=partnerprogramwe-online.com
Service for Current Sense TransformersWürth Elektronik expands its free design tool REDE...13731Product ReleaseService for Current Sense TransformersWürth Elektronik expands its free design tool REDEXPERT to include the Current Sense Transformer Selector. It enables developers to select the appropriate current sense transformers based on parameters relevant to their application. Current sense transformers for measuring alternating current offer unique advantages over other current sensing solutions: galvanic isolation, low power loss, high immunity to signal noise, and simple circuit design. Selecting the right current sensor can be a challenge depending on the application. The Current Sense Transformer Selector from Würth Elektronik offers a unique design tool previously not available on the market in this form. After entering the parameters – current, frequency, signal type, and desired maximum error rate – the Selector finds all available options in Würth Elektronik’s product database that match these criteria. The tool provides a list of components with the corresponding parameters and simulates both the temperature rise and the error as a function of frequency and current. The tool also allows the direct comparison of different options in a simulation view and provides an overview page with all relevant information for the selected component. These simulations, based on actual measurements, save developers from having to conduct their own tests when selecting current sense transformers (CSTs). Typical applications of current sense transformers include AC current measurement, switched-mode power supplies, overload detection, load shedding/shutdown detection, metering, load measurement, and high-frequency current sensing.05.02.2026 10:30:00Febnews_2026-02-15_11.jpg\images\news_2026-02-15_11.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=redexpert-current-sensewe-online.com
Isolated Gate Driver ICs for SiC ApplicationsInfineon Technologies introduces the EiceDRIVER&tr...13729Product ReleaseIsolated Gate Driver ICs for SiC ApplicationsInfineon Technologies introduces the EiceDRIVER&trade; 1ED301xMC12I product family, a series of high-performance isolated gate driver ICs with opto. This enables engineers to migrate to SiC technology without redesigning opto-based control schemes. The family is suitable for demanding applications where fast, reliable, and SiC-capable gate drivers are required, such as motor drives, solar inverters, electric-vehicle chargers, and energy-storage systems. The 1ED301xMC12I product family includes three variants designed to support Si MOSFETs, IGBTs, and SiC MOSFETs: 1ED3010, 1ED3011, and 1ED3012. All devices deliver up to 6.5 A of output current. The gate drivers come in a CTI 600 6-pin DSO package offering more than 8 mm creepage and clearance. Their insulation is certified according to UL 1577 and is pending certification according to IEC 60747-17. The opto-emulator input uses two pins. With a CMTI exceeding 300 kV/&micro;s, a propagation delay of 40 ns, and timing matching below 10 ns, the devices enable precise and robust switching behavior. Moreover, a pure PMOS sourcing stage further improves turn-on performance.05.02.2026 08:30:00Febnews_2026-02-15_9.jpg\images\news_2026-02-15_9.jpghttps://www.infineon.com/market-news/2026/infpss202602-045infineon.com
1200V SiC MPS DiodesRIR Power Electronics has introduced a family of 1...13727Product Release1200V SiC MPS DiodesRIR Power Electronics has introduced a family of 1200 V Silicon Carbide Merged-PiN Schottky (MPS) diodes designed for high-efficiency and high-reliability power systems. The devices are available in current ratings from 10 A to 40 A in industry-standard TO-247-2L packages. By monolithically integrating Schottky and PiN structures, RIR’s SiC MPS diodes deliver near-zero reverse recovery with enhanced surge current capability, low leakage at elevated temperatures, and improved avalanche and blocking robustness compared to conventional Schottky diodes. The diodes target demanding applications such as EV charging, data centers and AI infrastructure, renewable energy and grid-tied systems, industrial drives, aerospace and defense, and green hydrogen and electrolysis systems.05.02.2026 06:30:00Febnews_2026-02-15_7.png\images\news_2026-02-15_7.pnghttps://www.rirpowersemi.com/news/rir-launches-sic-mps-diodes-for-ev-and-power-systemsrirpowersemi.com
Technology Guide to enhance Power Stability in AI-driven Data CentresMurata Manufacturing has launched a technology gui...13725Industry NewsTechnology Guide to enhance Power Stability in AI-driven Data CentresMurata Manufacturing has launched a technology guide entitled: ‘Optimising Power Delivery Networks for AI Servers in Next-Generation Data Centres.’ Available on the company’s website, the guide introduces specific power delivery network optimisation solutions for AI servers that enhance power stability and reduce power losses across the data center infrastructure. The guide addresses the rapid advancement and adoption of AI, a trend driving the continuous rollout of new data centers worldwide. As the industry moves toward higher voltage operations and increased equipment density, the resulting increase in overall power consumption has made stable power delivery a critical business issue for data centre operators. Consequently, the guide focuses on power circuit design for data centers, providing a detailed overview of market trends, evolving technologies in power delivery, and the key challenges the sector currently faces. To assist engineers and designers, the guide is structured to provide a market overview that breaks down power consumption and technology trends within power lines. It further addresses market challenges and solutions by examining key considerations in power-line design and exploring how the evolution of power placement architectures can facilitate power stabilisation and loss reduction. Murata supports these architectural improvements with products, including multilayer ceramic capacitors (MLCC), silicon capacitors, polymer aluminium electrolytic capacitors, inductors, chip ferrite beads, and thermistors. Furthermore, the company provides design-stage support.04.02.2026 10:00:00Febnews_2026-02-15_5.png\images\news_2026-02-15_5.pnghttps://www.murata.com/en-eu/news/other/other/2026/0204murata.com
Texas Instruments to acquire Silicon LabsTexas Instruments and Silicon Labs have signed a d...13723Industry NewsTexas Instruments to acquire Silicon LabsTexas Instruments and Silicon Labs have signed a definitive agreement under which Texas Instruments will acquire Silicon Labs for $ 231.00 per share in an all-cash transaction, representing a total enterprise value of approximately $ 7.5 billion. The acquisition aims to create a provider of embedded wireless connectivity solutions by combining Silicon Labs’ strong portfolio and expertise in mixed signal solutions with Texas Instruments’ analog and embedded processing portfolio and internally owned technology and manufacturing capabilities. The combined company is expected to accelerate growth by better serving existing and new customers through enhanced innovation and market access.04.02.2026 08:00:00Febnews_2026-02-15_3.jpg\images\news_2026-02-15_3.jpghttps://www.ti.com/about-ti/newsroom/news-releases/2026/2026-02-04-texas-instruments-to-acquire-silicon-labs.html?HQS=corp-dbwti-ep-tisi-bhp-news-null-wweti.com
Power Module enhances AI Data Center Power Density and EfficiencyMicrochip Technology launched the MCPF1525 Power M...13730Product ReleasePower Module enhances AI Data Center Power Density and EfficiencyMicrochip Technology launched the MCPF1525 Power Module, a highly integrated device with a 16V Vin buck converter that can deliver 25 A per module, stackable up to 200 A. This device is designed to power the latest generation of PCIe switches and high-performance compute MPU applications needed for AI deployments. The MCPF1525 is packaged in a vertical construction that maximizes board space efficiency and can offer up to a 40 % board area reduction when compared to other solutions. The compact power module is approximately 6.8 mm &times; 7.65 mm &times; 3.82 mm, making it usable for space-constrained AI servers. For increased reliability, the MCPF1525 includes multiple diagnostic functions reported over PMBus&trade;, including over-temperature, over-current and over-voltage protection to minimize undetected faults. With a thermally enhanced package, the device is engineered to work within an operating junction temperature range of -40°C to +125°C. An on-board embedded EEPROM allows users to program the default power-up configuration. The MCPF1525 features a customized integrated inductor for low conducted and radiated noise, enhancing signal integrity, data accuracy and reliability of high-speed computing, helping reduce repeated data transmissions that waste valuable system power and time.03.02.2026 09:30:00Febnews_2026-02-15_10.jpg\images\news_2026-02-15_10.jpghttps://www.microchip.com/en-us/about/news-releases/products/new-power-module-enhances-ai-data-center-power-density-efficiencymicrochip.com
GaN Power Transistor: Seventh-Generation in Mass ProductionEfficient Power Conversion (EPC) has started volum...13734Product ReleaseGaN Power Transistor: Seventh-Generation in Mass ProductionEfficient Power Conversion (EPC) has started volume production of the EPC2366, the first of its seventh-generation (Gen 7) eGaN&reg; family of power transistors. EPC2366 delivers up to 3&times; better performance than equivalent silicon MOSFETs. With a typical RDS(on) of 0.84 m&#8486; and an optimized R<sub>DS(on)</sub> &times; Q<sub>G</sub> figure of merit (FoM) &lt; 12 m&#8486; *nC, it simultaneously cuts conduction and switching losses while improving thermal performance. Engineered for high-efficiency, high-density power systems, the device excels in synchronous rectification, high-density DC/DC conversion, AI server power supplies, and advanced motor drives. It supports drain-to-source voltages up to 40 V and transient voltages up to 48 V, with continuous drain currents up to 88 A and pulsed currents of 360 A, making it well suited for the most demanding power systems. The device is integrated in a 3.3 mm &times; 2.6 mm PQFN package with a thermal resistance from the junction to the case of 0.6 °C/W. To accelerate design-in and evaluation, EPC also offers the EPC90167 half-bridge evaluation board, which integrates two EPC2366 transistors in a low-parasitic layout with support for standard PWM drive signals and flexible input modes, providing engineers a reference platform to assess performance in real-world applications.02.02.2026 13:30:00Febnews_2026-02-15_14.jpg\images\news_2026-02-15_14.jpghttps://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3254/epc-launches-its-first-seventh-generation%e2%80%afgen-7-egan-power-transistor-the-40%e2%80%afv-epc2366-into-mass-productionepc-co.com
Coin Cell SupercapacitorsCoin cell supercapacitors are compact electrochemi...13752Product ReleaseCoin Cell SupercapacitorsCoin cell supercapacitors are compact electrochemical energy storage devices with a high capacity that can quickly store and release electrical energy. Compared to conventional batteries, they offer several advantages, including high power density, a long cycle life, and fast charge and discharge rates. Supercapacitors have around 10% of the energy density of rechargeable batteries of the same weight. However, their power density is ten to a hundred times greater. Supercapacitors can therefore be charged and discharged much faster. They can also withstand many more charging cycles than rechargeable batteries, making them suitable as a replacement or supplement wherever high switching loads are required. The coin cell supercapacitors are used in a variety of applications, including backup power supplies, electronic devices, renewable energy systems and medical devices. While they are most commonly used for real-time clock backup, they can also be used for memory backup, battery swap ride-through and LED or audible alarms. The coin cell supercapacitors from Schurter are available for horizontal mounting (SCCA) or vertical mounting (SCCC). They can be used in systems with a voltage of up to 5.5 V and have a capacitance value ranging from 100 to 1,500 mF.29.01.2026 13:30:00Jannews_2026-03-01_16.jpg\images\news_2026-03-01_16.jpghttps://www.schurter.com/en/news/new-coin-cell-supercapacitorsschurter.com
High-Current, Low-Noise Shielded Power Inductor for Compact Power SystemsSumida has launched the molded power inductors of ...13732Product ReleaseHigh-Current, Low-Noise Shielded Power Inductor for Compact Power SystemsSumida has launched the molded power inductors of the 0615CDMCC/DS series, a low-profile magnetic component engineered to support increasingly power-dense electronics, including compact computing devices, servers, and advanced DC/DC converter architectures. The 0615CDMCC/DS series leverages metal compound molding construction - a key advancement over traditional ferrite inductor designs. By embedding the winding in a solid composite core, Sumida has eliminated internal air gaps and improved magnetic flux containment. This results in higher current capability and enhanced thermal performance, allowing the inductor to maintain stable inductance even as load current rises. Because the molding process naturally produces a shielded magnetic structure, the 0615CDMCC/DS series significantly reduces electromagnetic interference (EMI) and minimizes magnetic flux leakage into nearby circuitry without bulk. Engineers designing around noise-critical applications such as high-speed digital boards, RF-sensitive devices, and distributed power rails, gain flexibility in component placement without compromising signal integrity. The inductor is ultra-thin with a footprint of 7.3 mm &times; 6.8 mm &times; 1.5 mm max.), giving engineers a practical solution for mechanical envelopes that leave little headroom for vertically oriented components. With operation and storage temperature support from -55 °C to +125 °C, the 0615CDMCC/DS series is prepared for demanding thermal conditions across computing, industrial, and battery-powered platforms. Inductance values from 0.12 &micro;H to 1.50 &micro;H are currently available.28.01.2026 11:30:00Jannews_2026-02-15_12.jpg\images\news_2026-02-15_12.jpghttps://products.sumida.com/ProductsInfo/ProductGuide/PowerInductors/TypeDetail.php?type=0615CDMCC%2FDSsumida.com
High Voltage DiodesDean Technology added two series to their medium p...13728Product ReleaseHigh Voltage DiodesDean Technology added two series to their medium power high voltage diode line: the FH Series and SH Series of diodes. The FH series and SH series were conceptualized and designed based on specific needs from customers. Using the technology of the legacy 2CL series diode line, these series offer higher current and significantly faster reverse recovery time, making them suited for applications with critical performance requirements such as X-ray equipment (medical, dental, industrial, and security), induction heating, and high voltage power supplies. SH series models are standard recovery, but the FH series offers a reverse recovery time (TRR) of 40 ns maximum, significantly faster than its 2CL predecessor (100 ns). The SH series units offer a maximum repetitive reverse voltage range (VRRM) from 8 to 15 kV at 200 to 350 mA of average forward current (IFAVM). The FH series offers a VRRM range of 2 to 30 kV at an IFAVM range of 100 to 700 mA.28.01.2026 07:30:00Jannews_2026-02-15_8.png\images\news_2026-02-15_8.pnghttps://www.deantechnology.com/two-new-series-of-enhanced-and-higher-voltage-diodes/deantechnology.com
GaN Technology Licensing AgreementVanguard International Semiconductor Corporation (...13722Industry NewsGaN Technology Licensing AgreementVanguard International Semiconductor Corporation (VIS) has signed a technology licensing agreement with Taiwan Semiconductor Manufacturing Company (TSMC) for high-voltage (650 V) and low-voltage (80 V) Gallium Nitride technologies. This agreement will help VIS accelerate the development and expansion of next-generation GaN power technologies for applications such as data centers, automotive electronics, industrial control, and energy management. Through this licensing agreement, VIS will expand its GaN-on-Si technology into high-voltage applications and offer a GaN-on-Si platform for power applications. Combined with its existing GaN-on-QST technology platform, VIS claims to "become the only foundry in the world capable of offering power GaN technologies on both silicon and QST substrates". VIS will support complete product solutions covering low voltage (&lt;200 V), high voltage (650 V) and ultra-high voltage (1200 V). The technology will be validated on VIS’ mature 8-inch manufacturing line to ensure process stability and high yield. Development activities are expected to commence in early 2026, with production scheduled for the first half of 2028.28.01.2026 07:00:00Jannews_2026-02-15_2.jpg\images\news_2026-02-15_2.jpghttps://www.vis.com.tw/en/press_detail?itemid=21379vis.com.tw
600 V Super Junction MOSFET PlatformAlpha and Omega Semiconductor unveiled its &alpha;...13735Product Release600 V Super Junction MOSFET PlatformAlpha and Omega Semiconductor unveiled its &alpha;MOS E2&trade; 600 V Super Junction MOSFET platform. The first high-voltage product from the platform is AOS’ AOTL037V60DE2. The MOSFET is designed to meet the growing demand for high efficiency and high-power density across a wide range of applications, including servers, workstations, telecom rectifiers, solar inverters, motor drives, and industrial power systems. AOS engineered its &alpha;MOS E2 High-Voltage Super Junction MOSFET platform with an intrinsic body diode to reliably handle hard commutation scenarios, such as reverse recovery of the freewheeling body diode that can occur during abnormal events, such as short-circuits or start-up transients. The AOTL037V60DE2, available in a TOLL package, features a maximum R<sub>DS(on)</sub> of 37 m&#8486;. In evaluations conducted by AOS’ application engineering team, the body diode ruggedness of this MOSFET demonstrated the ability to withstand di/dt = 1300 A/&micro;s under specific forward current conditions at a junction temperature of 150°C. Moreover, AOS testing confirmed that the AOTL037V60DE2 delivered superior Avalanche Unclamped Inductive Switching (UIS) capability and a longer Short-Circuit Withstanding Time (SCWT) when compared to competing MOSFETs. This enhanced ruggedness translates into greater system-level reliability, ensuring robust performance even under abnormal operating scenarios.27.01.2026 14:30:00Jannews_2026-02-15_15.jpg\images\news_2026-02-15_15.jpghttps://www.aosmd.com/news/alpha-and-omega-semiconductor-unveils-its-powerful-amos-e2-600v-super-junction-mosfet-platformaosmd.com
LDO Regulators with 500 mA Output CurrentROHM has developed the "BD9xxN5 Series" of LDO reg...13733Product ReleaseLDO Regulators with 500 mA Output CurrentROHM has developed the "BD9xxN5 Series" of LDO regulator ICs with 500 mA output current, featuring its proprietary ultra-stable control technology "Nano Cap&trade; ". This series comprises 18 products designed for 12V/24V primary power supply applications used in automotive equipment, industrial equipment, and communication infrastructure. ROHM developed the "BD9xxN1 Series" LDO regulator (150 mA output current) in 2022, incorporating its proprietary control technology, Nano Cap , which enables stable operation with output capacitors as small as 100 nF. The BD9xxN5 Series builds on the BD9xxN1 Series by increasing the output current to 500 mA – more than three times higher than before – significantly broadening its suitability for applications requiring higher power. In addition, very low output voltage ripple of approximately 250 mV (with load current variation of 1 mA to 500 mA within 1 µs) is achieved with a small output capacitance of 470 nF (typical). Beyond standard small MLCCs (multi-layer ceramic capacitors) in the range of several &micro;F and large-capacity electrolytic capacitors, it also supports ultra-small MLCCs, such as the 0603M size (0.6 mm &times; 0.3 mm), with capacities below 1 &micro;F. This contributes to space saving as well as greater flexibility in component selection.27.01.2026 12:30:00Jannews_2026-02-15_13.jpg\images\news_2026-02-15_13.jpghttps://www.rohm.com/news-detail?news-title=2026-01-27_news_ldo&defaultGroupId=falserohm.com
IGBT Series for Solar and Energy Storage SystemsMagnachip Semiconductor launched a series of IGBTs...13698Product ReleaseIGBT Series for Solar and Energy Storage SystemsMagnachip Semiconductor launched a series of IGBTs designed for solar inverters and industrial Energy Storage Systems (ESS). These 650 V and 1200 V generation discrete IGBT products provide improved Reverse Bias Safe Operating Area for stable and reliable performance under harsh high-voltage and high-current conditions. The products are available in both standard TO-247 and high-capacity TO-247 Plus packages. Specifically, the cell pitch has been reduced by approximately 40 %, increasing current capacity within the same die area. Magnachip plans to further expand its product lineup in the first half of 2026 by introducing a high-current series rated up to 650 V / 150 A, as well as new 750 V products. The company also plans to add the ‘TO-247-4Lead’ package, featuring a Kelvin pin for improved switching efficiency.22.01.2026 11:30:00Jannews_2026-02-01_14.png\images\news_2026-02-01_14.pnghttps://www.magnachip.com/magnachip-targets-solar-and-energy-storage-systems-markets-with-new-generation-of-high-efficiency-igbt-series/magnachip.com
Sintered Metal Shunt ResistorsROHM has developed the UCR10C Series, which is cla...13694Product ReleaseSintered Metal Shunt ResistorsROHM has developed the UCR10C Series, which is claimed to deliver "the industry’s highest rated power for 2012-size shunt resistors (10 m&#8486; to 100 m&#8486;)". The devices form a copper-based resistive element on an alumina substrate via sintering, achieving rated powers of 1.0 W and 1.25 W. This enables the replacement of products with wide terminal types or larger alternatives, facilitating miniaturization and reducing the number of components required. Furthermore, the use of a metal resistive element achieves a low TCR (0 to +60 ppm/°C). This minimizes errors due to temperature changes, enabling high-precision current sensing. Moreover, it achieves the same level of durability as the metal plate types in temperature cycle testing (-55 °C / +155 °C, 1000 cycles).22.01.2026 07:30:00Jannews_2026-02-01_10.jpg\images\news_2026-02-01_10.jpghttps://www.rohm.com/news-detail?news-title=2026-01-22_news_resistor&defaultGroupId=falserohm.com
1200 V / 300 A IGBT Module in CPAK-EDC PackageCISSOID has expanded its standard product offering...13693Product Release1200 V / 300 A IGBT Module in CPAK-EDC PackageCISSOID has expanded its standard product offerings with the CMT-PLA1BL12300MA. This 1200 V / 300 A Half-Bridge IGBT Power Module is now available in the industry-standard CPAK-EDC package, delivering enhanced mechanical robustness and drop-in compatibility. The CMT-PLA1BL12300MA is designed for high frequency switching and high-performance industrial applications, such as UPS systems, motor and motion control solutions, and power supplies. Utilising Trench Gate Field Stop (TG-FS) IGBT technology, the module delivers a balance between switching speed and conduction losses. Integrated diode technology provides fast and soft reverse recovery, simplifying system design while improving the EMC performance. The device is rated for 450 A continuous DC current (@ T<sub>j</sub> = 90 °C), operates with a saturation voltage V<sub>ce_sat</sub> = 1.56 V (@ I<sub>c</sub> = 300 A, T<sub>j</sub> = 25 °C) / V<sub>ce_sat</sub> = 1.78 V (@ I<sub>c</sub> = 300 A, T<sub>j</sub> = 150 °C) and offers the following thermal resistance: R<sub>th_jc</sub> = 0.065 °C/W (IGBT) / 0.1 °C/W (diode).22.01.2026 06:30:00Jannews_2026-02-01_9.jpg\images\news_2026-02-01_9.jpghttps://www.cissoid.com/news/cissoid-expands-standard-portfolio-with-efficient-1200v-300a-igbt-module-in-robust-cpak-edc-package-38cissoid.com
600 V Gate Driver FamilyMicrochip introduced its 600 V Gate Driver portfol...13699Product Release600 V Gate Driver FamilyMicrochip introduced its 600 V Gate Driver portfolio, featuring 12 devices available in half-bridge, high-side/low-side and 3-phase driver configurations, which are designed for motor control and power conversion systems for industrial and consumer applications. The 600 V gate drivers provide current drive options from 600 mA to 4.5 A. They support 3.3V logic for seamless integration with microcontrollers. They are designed with Schmitt-triggered inputs and internal deadtime to protect MOSFETs.21.01.2026 12:30:00Jannews_2026-02-01_15.jpg\images\news_2026-02-01_15.jpghttps://www.microchip.com/en-us/about/news-releases/products/microchip-introduces-600v-gate-driver-family-for-high-voltagemicrochip.com
Senior Vice President for Power SolutionsOmniOn Power&trade; (OmniOn) has appointed Philip ...13686PeopleSenior Vice President for Power SolutionsOmniOn Power&trade; (OmniOn) has appointed Philip Zuk as Senior Vice President and General Manager of its AI and Data Center business. He has more than 25 years of experience in the global power electronics and semiconductor industries. In this role, Zuk will lead the company’s recently established AI and Data Center business unit, focused on addressing the power challenges faced by today’s AI-driven data centers while anticipating the industry’s future power requirements. Prior to joining OmniOn, Zuk used to work for Transphorm, Microsemi and Vishay Siliconix.21.01.2026 07:00:00Jannews_2026-02-01_2.jpg\images\news_2026-02-01_2.jpghttps://www.omnionpower.com/about/news/press-releases/omnion-power-appoints-philip-zuk-new-svp-of-ai-and-data-center-businessomnionpower.com
Family of Dual-Channel Digital Isolators for High-Voltage SystemsDiodes Incorporated announced the API772x RobustIS...13700Product ReleaseFamily of Dual-Channel Digital Isolators for High-Voltage SystemsDiodes Incorporated announced the API772x RobustISO&trade; products, a series of dual-channel digital isolators, which are specifically designed to provide a reliable and robust isolation solution for digital signals in critical applications - addressing rising demands in areas such as industrial automation, new energy power systems, and data center power supplies. The API772x digital isolators are engineered to meet reinforced and basic isolation requirements across various standards, including VDE, UL, and CQC. They offer a 5,000 V<sub>RMS</sub> isolation rating for one minute, per UL 1577, and feature an 8,000 V<sub>Peak</sub> isolation rating, per DIN EN IEC 60747-17 (VDE 0884-17), with a maximum surge isolation voltage of 12,800 V<sub>Peak</sub>. This level of isolation represents a significant differentiation with a higher breakdown voltage exceeding 12 kV. The capacitive isolation barrier employed in these devices, which has a thickness greater than 25 &micro;m, is predicted to have an operational lifetime of over 40 years. These RobustISO digital isolators support data rates of up to 100 Mbit/s and shows a minimum common-mode transient immunity (CMTI) of 150 kV/&micro;s. The API772x series operates over a supply voltage range of 2.5 V to 5.5 V and features low-power consumption, typically drawing 2.1 mA per channel at 1Mbps. They also offer a low propagation delay of 11ns (typ.), ensuring timely signal transferring. The API772x devices are supplied in the SO-8W (Type CJ) package.20.01.2026 13:30:00Jannews_2026-02-01_16.jpg\images\news_2026-02-01_16.jpghttps://www.diodes.com/about/news/press-releases/robustiso-family-of-dual-channel-digital-isolators-from-diodes-incorporated-enhances-safety-and-reliability-in-high-voltage-systemsdiodes.com
Concurrent forums of productronica China 2026: Focusing on Four Trends and Guiding the Development Direction of Intelligent ManufacturingFrom March 25 to 27, 2026, productronica China 202...13685Event NewsConcurrent forums of productronica China 2026: Focusing on Four Trends and Guiding the Development Direction of Intelligent ManufacturingFrom March 25 to 27, 2026, productronica China 2026 will be held grandly at Halls E1-E5 and W1-W4 of the Shanghai New International Expo Centre (SNIEC). As an important display and exchange platform for the electronic manufacturing industry, this edition will feature over 1,000 exhibitors across its exhibition area of nearly 100,000 square meters. It will focus on the needs of multiple fields, including component manufacturing, test and measurement, quality assurance, new energy vehicle inspection technology, surface mount technology (SMT), electronics manufacturing services (EMS), automated electronic assembly, clean technology, cable processing, electronic chemical materials, dispensing and bonding technology, robotics, AGV, intelligent warehousing, sensor technology, motion control and drive technology,new energy vehicle technology as well as automotive PLC Industrial control system. It aims to present an "innovation feast" covering the entire industrial chain of electronic production to the industry, highlighting smart factories, new energy vehicle technology, and the digital future.19.01.2026 06:00:00Jannews_2026-02-01_1.jpg\images\news_2026-02-01_1.jpghttps://dwz.cn/dm1kDXWYproductronicachina.com
R&D Centre and SMT Prototyping Line in Xiamen/China openedRecom Power has opened a Research & Development Ce...13691Industry NewsR&D Centre and SMT Prototyping Line in Xiamen/China openedRecom Power has opened a Research & Development Centre and SMT Prototyping Line in Xiamen/China. This facility integrates R&D, Engineering, and Quality departments under one roof, to enable seamless collaboration across all stages of product development. This close interaction enables faster design iterations, improved Design for Manufacturability (DFM), accelerated trial runs and verification testing, as well as mass production part approval. Equipped with a dedicated SMT prototyping line, the Xiamen Centre allows for rapid sample and initial stock production. The RECOM Xiamen R&D Centre will serve as a vital hub for next-generation power conversion technologies, supporting both global and regional development initiatives. It complements RECOM’s existing design and production facilities across Europe, the USA, and Asia, ensuring consistent product quality and innovation worldwide.16.01.2026 12:00:00Jannews_2026-02-01_7.jpg\images\news_2026-02-01_7.jpghttps://recom-power.com/en/knowledgebase/newsroom/rec-n-recom-opens-new-r&d-centre-and-smt-prototyping-line-in-xiamen,-china-449.html?5recom-power.com
DC link Capacitor operate at up to +105 °C without DeratingTDK Corporation announced the ModCap UHP (B25648A)...13702Product ReleaseDC link Capacitor operate at up to +105 °C without DeratingTDK Corporation announced the ModCap UHP (B25648A) series of DC link capacitors. ’UHP’ stands for ’Ultra-High Performance’, and this series enables continuous operation at hotspot temperatures of up to +105 °C without power derating. Compared to previous ModCap generations, which required derating starting at +90 °C, the new design enables higher current density and a longer lifetime of 200,000 hours at +105 °C in challenging conditions, while supporting a 20 % higher current density. With a DC voltage rating of 1350 V to 1800 V and a capacitance ranging from 470 &micro;F to 880 &micro;F, the series is optimized for SiC semiconductor-based inverters that require low inductance (ESL of 8 nH) and high-frequency performance. These capacitors target fast-growing sectors, including renewable energy (solar and wind power, electrolyzer), energy storage, and inverters for railway and industrial drives. Their cubic design (205 &times; 90 &times; 170 mm&sup3;; L x W x H) simplifies busbar integration, thereby increasing power density in compact converters and reducing the need for additional snubber capacitors.15.01.2026 15:30:00Jannews_2026-02-01_18.jpg\images\news_2026-02-01_18.jpghttps://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-introduces-modcap-uhp-for-high-current-dc-link-applications-with-105-c-operation-without-derating/3660368tdk-electronics.tdk.com
Power Electronics International 2026 EventPower Electronics International Conference 2026 re...13690Event NewsPower Electronics International 2026 EventPower Electronics International Conference 2026 returns to Brussels April 20 to 22, for its 4th edition as part of the Angel Tech conference series, bringing together the global power electronics community for two days of insight, discussion and collaboration. From automotive electrification and renewable energy to AI driven data centres and wide bandgap innovation, the agenda is built around the technologies shaping the future of power electronics. Co located with CS International, PIC International and Advanced Packaging International, the event will welcome 800 plus senior level attendees and 80 plus exhibitors, with four expert led conference programmes, a shared exhibition and dedicated networking receptions.15.01.2026 11:00:00Jannews_2026-02-01_6.png\images\news_2026-02-01_6.pnghttps://peinternational.net/register?utm_source=Bodo&utm_medium=LinkedIn&utm_campaign=MediaBodos&utm_term=MediaBodos&utm_content=MediaBodospeinternational.net
Tape-Out of Vertical Power Solution for AI Data CentersAmber Semiconductor announced the successful tape ...13687Industry NewsTape-Out of Vertical Power Solution for AI Data CentersAmber Semiconductor announced the successful tape out of its AmberSemi PowerTile&trade; vertical power delivery solution design specifically for AI processors in datacenters. PowerTile is a 1,000 A vertical power device that can be mounted on the backside of a server board, directly beneath the processor. By delivering power through a vertical path rather than traditional lateral distribution, PowerTile reduces power distribution losses to the processor by more than 85 %. PowerTile is a scalable solution designed to support CPUs, GPUs, FPGAs and other high-performance processors requiring large current delivery in minimal space. Measuring 20 mm &times; 24 mm &times; 1.68 mm, a single PowerTile can deliver up to 1,000 A directly to the processor. Multiple devices can be paralled to scale beyond 10 kA. The company expects to begin evaluation and testing with key partners later this year, with initial products shipping in material production volumes in 2027.15.01.2026 08:00:00Jannews_2026-02-01_3.jpg\images\news_2026-02-01_3.jpghttps://www.ambersemi.com/ambersemi.com
10 Watt Wide-Input Converters for Industrial ApplicationsTRACO Power releases its TMR 10WI series of isolat...13701Product Release10 Watt Wide-Input Converters for Industrial ApplicationsTRACO Power releases its TMR 10WI series of isolated DC/DC converters designed for versatility, offering an input range from 4.5 V<sub>DC</sub> to 75 V<sub>DC</sub> at an efficiency of up to 89 %. Each unit is equipped with protection features, including short-circuit protection, overcurrent limitation, undervoltage lockout, and remote on/off control. Certified to IEC/EN/UL 62368-1 standards, the series supports an operating temperature range of -40 °C to +70 °C and is rated for altitudes up to 5000 meters. Housed in a SIP-8 plastic case, the TMR 10WI series is available in both single and dual output configurations, making it suitable for industrial applications.14.01.2026 14:30:00Jannews_2026-02-01_17.png\images\news_2026-02-01_17.pnghttps://www.tracopower.com/de/tmr10witracopower.com
40 W and 75 W Railway DC/DC ConvertersRECOM announced two DC/DC converters for the rail ...13697Product Release40 W and 75 W Railway DC/DC ConvertersRECOM announced two DC/DC converters for the rail market with an 11:1 input range to cover all nominal input voltages from 24 V to 110 V<sub>DC</sub>, with 24 V output and a 12 V and 15 V output version coming soon. Models RMD40-UW and RMD75-UW have trimmable outputs with reinforced isolation, rated at 40 W (60 W/10 s boost) and 75 W (90 W/10 s boost), respectively. The parts are offered as lightweight baseplate-cooled with a conversion efficiency of better than 90%, which means that they can operate at full power for OT4+ST1&ST2 classes from -40 °C to +85 °C with no additional cooling in any mounting position. Features like EN50121-3-2 filtering and disturbance protection, input reverse polarity protection, inrush current limiting, remote on/off, power-good signal/contacts, output trim and internal OR-ing diode for paralleling/redundant operation are already built in. An active hold-up circuit provides &ge;10 ms ride-through across the whole input range. Protection against short circuits, over-current, over-temperature and over-voltage is included as well. The RMD40-UW is presented in a compact 100 &times; 60 &times; 30 mm&sup3; package while the RMD75-UW just measures 110 &times; 73 &times; 40 mm&sup3;. Connections are by block terminals or optionally by Cage Clamp terminals as suffix /PT and a DIN-rail mounting option is available for both versions. The units come with aluminum housing in IP20, the electronic part is conformally coated for OV2/PD2 environment and both families fulfill EN45545-2 - HL3 fire protection hazard level.14.01.2026 10:30:00Jannews_2026-02-01_13.jpg\images\news_2026-02-01_13.jpghttps://recom-power.com/en/knowledgebase/newsroom/rec-n-40w-and-75w-railway-dc!sdcs-are-fully-featured-448.html?3recom-power.com
Product Navigator Directs Engineers to the right ComponentWürth Elektronik introduces an online tool that si...13689Industry NewsProduct Navigator Directs Engineers to the right ComponentWürth Elektronik introduces an online tool that simplifies the search for the right components. The Product Navigator helps users select electronic and electromechanical components through practical example applications and typical topologies. With the Navigator, Würth Elektronik refines an approach that has been proven in the Application Guide since 2021. The Application Guide is now fully integrated into the significantly expanded Product Navigator. The advantage: Developers can now find the products relevant to their application area more quickly, without having to work their way through extensive catalogs. The tool’s navigation offers the following application areas to choose from: Shielding and grounding, cable assembly solutions, line filters, power supplies, DC filters, thermal management, optoelectronics, power distribution, IC peripherals, human–machine interaction (switches and displays), high-frequency and wireless communication, as well as measurement and sensor technology. Each area offers typical topologies and additional content to support electronics developers in designing their applications.14.01.2026 10:00:00Jannews_2026-02-01_5.jpg\images\news_2026-02-01_5.jpghttps://www.we-online.com/en/news-center/press?instance_ID=5506&d=release-product-navigatorwe-online.com
Sampling of four Trench SiC-MOSFET Bare Dies for Power Semiconductors startsMitsubishi Electric Corporation has started shippi...13688Industry NewsSampling of four Trench SiC-MOSFET Bare Dies for Power Semiconductors startsMitsubishi Electric Corporation has started shipping samples of four trench SiC-MOSFET bare dies (chips not encased in protective housing) designed for use in power electronics equipment, such as electric vehicle traction inverters, onboard chargers, and power supply systems for renewable energy sources including solar power.14.01.2026 09:00:00Jannews_2026-02-01_4.jpg\images\news_2026-02-01_4.jpghttps://www.mitsubishielectric.com/en/pr/2026/0114-b/mitsubishielectric.com
Protection Zener Diodes with Ratings up to 75 VToshiba Electronics has added four products to its...13696Product ReleaseProtection Zener Diodes with Ratings up to 75 VToshiba Electronics has added four products to its CUZ series of surge protection Zener diodes. The CUZ56V, CUZ62V, CUZ68V, and CUZ75V, with Zener voltages (VZ) of 56 V, 62 V, 68 V, and 75 V respectively, are designed for use in power supplies for data centers, network equipment, industrial systems, and system architectures with 48 V and above. They are designed to protect semiconductor devices against long pulse width switching surges and induced lightning surges, which can occur in the range of microseconds to milliseconds, as well as overvoltage pulses that are close to DC. While Toshiba’s TVS diodes specialise in ESD protection, these Zener products protect against surges while still providing electrostatic discharge (ESD) protection. All four products in this specific lineup share an absolute maximum power dissipation (PD) of 600 mW and a peak pulse current (IPP) rating of 5 A, according to IEC61000-4-5 at a peak transient of 8/20 &micro;s. For the individual products, the measured V<sub>Z</sub> (min. to max.) ranges span from 52 V to 60 V (CUZ56V) up to 70 V to 79 V (CUZ75V), measured at a current (I<sub>Z</sub>) of 2 mA. Additionally, ESD voltages range from &plusmn;13 kV (CUZ56V) to &plusmn;23 kV (CUZ75V) under contact conditions, and 5 kV under air conditions. The dynamic resistance typically ranges from 3.1 &#8486; to 4.0 &#8486;, and the typical clamp voltage ranges from 112 V to 120 V. The diodes are housed in the SOD-323 (USC) package, which features gull-wing leads.13.01.2026 09:30:00Jannews_2026-02-01_12.jpg\images\news_2026-02-01_12.jpghttps://toshiba.semicon-storage.com/eu/company/news/2026/01/diodes-20260113-1.htmltoshiba.semicon-storage.com
Larger Office in Japan openedRohde & Schwarz has opened a larger office in Osak...13692Industry NewsLarger Office in Japan openedRohde & Schwarz has opened a larger office in Osaki/Japan, with increased capabilities. The location, which replaces the original one in Shinjuku, has significantly enhanced facilities for service, repair, calibration and engineering support of test equipment as well as increased space for hosting. A test system that combines EMC receivers and automation software from Rohde & Schwarz with the AIP EMC Chassis Dynamometer enables vehicle manufacturers and Tier 1s to obtain an evaluation of the EMC performance of their designs under realistic operational conditions. AIP has enhanced this system with R&S radar target simulators to also provide vehicle-in-the-loop testing of radars in a controlled environment. This R&S office in Osaki has a dedicated space for calibration of EMC equipment and is near AIP’s new office.12.01.2026 13:00:00Jannews_2026-02-01_8.jpg\images\news_2026-02-01_8.jpghttps://www.rohde-schwarz.com/de/unternehmen/news-und-presse/all-news/rohde-schwarz-opens-larger-office-in-japan-and-increases-its-support-for-the-japanese-automotive-market-pressemitteilungen-detailseite_229356-1604489.htmlrohde-schwarz.com
MEMS-Based Hot-Switched Power Panel ValidatedMenlo Microsystems announced, in partnership with ...13675Industry NewsMEMS-Based Hot-Switched Power Panel ValidatedMenlo Microsystems announced, in partnership with Microchip Technology, that it has successfully completed the hot switching validation of a MEMS-based 1000V/500A (0.5 megawatt) relay panel that is the basis platform for future development of advanced circuit protection systems for the U.S. Navy. This accomplishment marks the first-ever validation of a MEMS-based 0.5 megawatt hot-switched relay panel for naval applications in the United States and is a critical step in the Navy’s 10-megawatt Advanced Circuit Breaker program. <br>Menlo Micro has successfully advanced through the program’s multiple phases of advancing complexity demonstrating the performance and scalability of its Ideal Switch&reg; technology for power applications. Validation testing of the latest phase was completed at Microchip Technology’s advanced power test facilities.05.01.2026 13:00:00JanNews_2026-01-15_8.jpg\images\News_2026-01-15_8.jpghttps://menlomicro.com/newsroom/menlo-micro-and-microchip-technology-validate-the-first-mems-based-hot-switched-power-panelmenlomicro.com