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| MEMS-Based Hot-Switched Power Panel Validated | Menlo Microsystems announced, in partnership with ... | 13675 | Industry News | MEMS-Based Hot-Switched Power Panel Validated | Menlo Microsystems announced, in partnership with Microchip Technology, that it has successfully completed the hot switching validation of a MEMS-based 1000V/500A (0.5 megawatt) relay panel that is the basis platform for future development of advanced circuit protection systems for the U.S. Navy. This accomplishment marks the first-ever validation of a MEMS-based 0.5 megawatt hot-switched relay panel for naval applications in the United States and is a critical step in the Navy’s 10-megawatt Advanced Circuit Breaker program. <br>Menlo Micro has successfully advanced through the program’s multiple phases of advancing complexity demonstrating the performance and scalability of its Ideal Switch® technology for power applications. Validation testing of the latest phase was completed at Microchip Technology’s advanced power test facilities. | 05.01.2026 13:00:00 | Jan | News_2026-01-15_8.jpg | \images\News_2026-01-15_8.jpg | https://menlomicro.com/newsroom/menlo-micro-and-microchip-technology-validate-the-first-mems-based-hot-switched-power-panel | menlomicro.com |
| Chris Jacobs named Senior Vice President, Marketing and Product Strategy | Power Integrations announced the appointment of Ch... | 13674 | People | Chris Jacobs named Senior Vice President, Marketing and Product Strategy | Power Integrations announced the appointment of Chris Jacobs as senior vice president for marketing and product strategy. Mr. Jacobs brings a wealth of experience in the semiconductor industry, with an outstanding record of product execution, customer acquisition and strategy development across a range of end markets. He joins Power Integrations from Micron Technology, where he served most recently as vice president and general manager for the automotive, industrial/multi-market and consumer market segments of the company’s multi-billion-dollar automotive & embedded business unit. Previously, Mr. Jacobs spent more than 25 years at Analog Devices, holding a succession of leadership roles including vice president for marketing and business development in the company’s power IC and module business and vice president and general manager for the autonomous transportation & automotive safety business unit. He holds an MBA from Boston College, an MS in electrical engineering from Northeastern University and a BS in computer engineering from Clarkson University. He has also completed executive leadership programs at Stanford University and MIT. | 05.01.2026 12:00:00 | Jan | News_2026-01-15_7.jpg | \images\News_2026-01-15_7.jpg | https://investors.power.com/news/news-details/2026/Power-Integrations-Names-Chris-Jacobs-Senior-Vice-President-Marketing-and-Product-Strategy/default.aspx | power.com |
| Fabio Necco Appointed as CEO | Cambridge GaN Devices (CGD) announced the appointm... | 13671 | People | Fabio Necco Appointed as CEO | Cambridge GaN Devices (CGD) announced the appointment of Fabio Necco as Chief Executive Officer. The move is designed to drive forward CGD’s entry into key markets. Necco takes over as CEO from CGD Co-founder, Giorgia Longobardi, who made the announcement, saying, "I am delighted to welcome Fabio to CGD and hand over the day-to-day leadership of the company while I channel my energy into my passion for bringing advanced, sustainable and energy-efficient power electronics solutions to market. Fabio, is the right person with the right skill set to take CGD into its next growth phase, and I shall do all I can to support his initiatives as I transition into my new role as CMO at CGD." Necco comes to CGD from onsemi, where he was vice president and division general manager with more than 25 years’ experience in power electronics, application engineering, vehicle electrification, and data centres, all primary market focus points of CGD. Necco said, "CGD is at an exciting juncture in its history. I have known CGD and Giorgia for years and have long been impressed with its success under her leadership. I am very excited about CGD’s unique technology and to have been chosen to lead our entire team to the next stages of product development as well as substantially increasing our presence in key markets." | 05.01.2026 09:00:00 | Jan | News_2026-01-15_4.JPG | \images\News_2026-01-15_4.JPG | https://camgandevices.com/en/p/new-ceo-appointed-at-cambridge-gan-devices/ | camgandevices.com |
| Family of noise-eliminating, self-powered SiC Gate Drivers | Allegro MicroSystems announced the strategic expan... | 13678 | Product Release | Family of noise-eliminating, self-powered SiC Gate Drivers | Allegro MicroSystems announced the strategic expansion of its Power-Thru™ isolated gate driver portfolio with the launch of the AHV85003/AHV85043 chipset. Joining the AHV85311 integrated solution, this expanded family creates a complete ecosystem for high-voltage silicon carbide (SiC) designs in AI data centers, electric vehicles (EVs), and clean energy systems. The solution simplifies the design challenge in power conversion by eliminating the need for external isolated bias supplies for gate drivers. Allegro’s Power-Thru isolated gate drivers integrate signal and power across a single isolation barrier. This approach reduces common-mode capacitance in the system by up to 15x , addressing a major source of noise that impacts efficiency. They deliver up to a 20dB improvement in electromagnetic interference (EMI) performance, which boosts overall system efficiency and eliminates countless hours spent by designers resolving noise issues. In addition to addressing the physics of noise, the expanded Power-Thru portfolio is engineered to resolve critical business challenges. To ensure supply chain resilience, both the chipset and the existing AHV85311 integrated solution support a multi-source SiC strategy. With selectable gate-to-source voltages (Vgs) of 15V, 18V, and 20V, and adjustable regulated negative voltage, designers can easily swap between SiC FETs from different vendors without redesigning their boards. | 05.01.2026 06:30:00 | Jan | News_2026-01-15_11.jpg | \images\News_2026-01-15_11.jpg | https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2026/sic-power-design-ai-data-centers-and-evs | allegromicro.com |
| Strategic Move extendsEelectronics Portfolio and Industry Production Footprint in EU | ITG Electronics has acquired Max Holzinger & Co Gm... | 13669 | Industry News | Strategic Move extendsEelectronics Portfolio and Industry Production Footprint in EU | ITG Electronics has acquired Max Holzinger & Co GmbH (MH), a Germany-based manufacturer of high-reliability components for a variety of industries. The acquisition marks a significant milestone in ITG’s long-term strategy to expand its European manufacturing footprint and strengthen regional supply capabilities. Under the new structure, MH will operate as an independent entity formally folded under ITG Deutschland GmbH, ITG Electronics’ European division. It will also carry the designation of a Member of ITG Companies, reinforcing its integration within ITG’s global family while maintaining its established identity, expertise, and customer relationships. The acquisition represents ITG’s continued European manufacturing investment, reflecting a strategic shift toward regionalized production. In 2015, ITG diversified manufacturing into Vietnam as part of a country-risk reduction initiative. A decade later, ITG is continuing this evolution by expanding its capabilities into Europe, bringing manufacturing closer to key customers across the continent and bolstering resilience through geographic diversity. "We are proud to welcome Max Holzinger & Co GmbH into the ITG family," said Martin Kuo, Director of Future at ITG Electronics. "This acquisition not only enhances our high-reliability and manufacturing capabilities, but also aligns with our long-term vision of regionalized production. With a trusted manufacturing partner based in Germany, we can better serve European customers who require precision, durability, and expedient support." | 01.01.2026 07:00:00 | Jan | News_2026-01-15_2.png | \images\News_2026-01-15_2.png | https://www.itg-electronics.com/en/news-detail/131 | itg-electronics.com |
| Unlock the Future of Electronics Manufacturing: productronica China Set to Open in March 2026 | The Asian electronics manufacturing industry is on... | 12674 | Event News | Unlock the Future of Electronics Manufacturing: productronica China Set to Open in March 2026 | The Asian electronics manufacturing industry is once again turning its attention to Shanghai, as productronica China 2026 is set to take place at the Shanghai New International Expo Centre (Halls E1-E5, W1-W4) from March 25 to 27, 2026. This exhibition is expected to span nearly 100,000 square meters and will bring together over 1,000 high-quality companies in the electronics manufacturing industry. The exhibition is dedicated to presenting an event that integrates innovative technologies, cutting-edge products, and efficient business exchanges in the Asian electronics manufacturing industry. The 2026 floor plan has been released to accurately align with business opportunities. The exhibition will continue to take place in Halls E1-E5 and W1-W4. Each exhibition hall is arranged based on categories of exhibits and application areas, featuring a well-structured and strategic layout. This design allows exhibitors to effectively showcase their core strengths while enabling visitors to efficiently identify and focus on their target products. The exhibits cover the entire electronics manufacturing industry chain, including component manufacturing, test and measurement, quality assurance, new energy vehicle inspection technology, surface mount technology (SMT), electronics manufacturing services (EMS), automated electronic assembly, clean technology, cable processing, electronic chemical materials, dispensing and bonding technology, robotics, AGV, intelligent warehousing, sensor technology, motion control and drive technology,new energy vehicle technology as well as automotive PLC Industrial control system. The visitor registration is going on heatedly, please <a href="https://dwz.cn/dm1kDXWY">register now</a href>! | 28.12.2025 12:00:00 | Dec | news_2026-01-01_7.jpg | \images\news_2026-01-01_7.jpg | https://dwz.cn/dm1kDXWY | productronicachina.com |
| Successful Premiere of the PCIM Asia New Delhi Conference | Under the theme "Agent of Change", the PCIM held i... | 12668 | Event News | Successful Premiere of the PCIM Asia New Delhi Conference | Under the theme "Agent of Change", the PCIM held its first conference in India. The Dr. Ambedkar International Conference and Exhibition Centre in New Delhi was the place to be on 9 – 10 December, with an impressive audience of industry experts taking in presentations by renowned companies in power electronics along with a targeted overview of future-oriented investment and expansion opportunities. The PCIM Asia New Delhi Conference presented itself as a force driving technological progress in the region, aiming to create a forward-thinking platform that will foster strategic partnerships and promote collaboration among major players in industry, research, and politics. With over 520 participants, more than 120 speakers, and over 75 presentations, the Indian edition of the PCIM Conference also featured professional exchange at the highest level. Current research results and technical innovations in the field of power electronics were explained in detail, providing valuable impetus for the industry’s further development. In addition, illustrative poster presentations<br>offered insights into pioneering projects and the results they have already achieved. At the center of the event, however, was naturally the conference, with the accompanying expo featuring a total of 50 exhibitors showing off their latest products and applications. Companies such as Mitsubishi Electric, Infineon, and Rohm were on hand in New Delhi to experience the dynamic Indian market for power electronics first-hand. The successful premiere of the PCIM Asia New Delhi Conference has now set the stage for further inspiring events focused on future-oriented technologies and strategic exchange, which are sure to continue driving the development of India’s power electronics industry. | 27.12.2025 06:00:00 | Dec | news_2026-01-01_1.jpg | \images\news_2026-01-01_1.jpg | https://www.pcim.in/index.html | pcim.in |
| Manufacturing Collaboration and Business Partnership in India | ROHM and Tata Electronics announced that they have... | 13670 | Industry News | Manufacturing Collaboration and Business Partnership in India | ROHM and Tata Electronics announced that they have entered into a strategic partnership for semiconductor manufacturing in India for both Indian and global markets. This partnership aims to leverage the expertise and ecosystem of both the companies in order to expand business opportunities for both ROHM and Tata Electronics, thereby further strengthening the relationship between the semiconductor industries of Japan and India. As an initial focus, ROHM and Tata Electronics will establish a manufacturing framework for power semiconductors in India by combining ROHM’s leading device technologies with the advanced backend technologies of Tata Electronics. In addition, by integrating the sales channels and networks, the partnership will create new business opportunities in the Indian market and deliver higher-value solutions to a wide range of customers. As the first step in this collaboration, Tata Electronics will assemble and test ROHM’s India-designed automotive-grade Nch 100V, 300A Si MOSFET in a TOLL package, targeting mass production shipments by next year. The companies will also explore co-development of high-value packaging technologies in the future. Both companies will combine efforts to market the products manufactured through this collaboration. | 22.12.2025 08:00:00 | Dec | News_2026-01-15_3.jpg | \images\News_2026-01-15_3.jpg | https://www.rohm.com/news-detail?news-title=2025-12-22_news_tata&defaultGroupId=false | rohm.com |
| Collaboration on SiC Power Semiconductor Modules with Mechanical Compatibility | Fuji Electric announced an agreement with Bosch to... | 12669 | Industry News | Collaboration on SiC Power Semiconductor Modules with Mechanical Compatibility | Fuji Electric announced an agreement with Bosch to collaborate on SiC power semiconductor modules for electric vehicles that feature package compatibility. By flexibly modifying the size and number of mounted chips, these modules can accommodate a wide range of power requirements and OEM circuit configurations. Moving forward, both companies intend to develop SiC power semiconductor modules with mechanical compatibility in terms of package outer dimensions and terminal positions. This will enable either module to be integrated into an inverter system without additional mechanical modifications, thereby minimizing the adjustment effort required for customers when using both module options in their systems. This collaboration aims to shorten design periods and contribute to diversifying procurement sources. As a result, engineers will be able to use SiC power semiconductor modules from both companies without altering their inverter system specifications, leading to reduced design time and diversified procurement. Furthermore, both companies plan to jointly develop user application technologies related to cooler design and various terminal connections when integrating SiC power semiconductor modules into inverter systems, and plan to provide technical support to customers. | 19.12.2025 07:00:00 | Dec | news_2026-01-01_2.jpg | \images\news_2026-01-01_2.jpg | https://www.fujielectric.com/about/notice/detail/1205558_5359.html | fujielectric.com |
| Thermal Jumper Chip Series | Bourns introduced its BTJ Series Thermal Jumper Ch... | 13684 | Product Release | Thermal Jumper Chip Series | Bourns introduced its BTJ Series Thermal Jumper Chips designed to provide effective thermal dissipation in a compact form factor. These devices provide high thermal conductivity while also having insulating properties to help protect and prolong system component lifespans. Because the thermal jumper chips are able to quickly dissipate heat and do not conduct electricity, they have no impact on system operation. Available in SMD packaging, Bourns® Thermal Jumper Chips provide an excellent thermal dissipation solution for a variety of mobile devices and electronic equipment that include power supplies, converters and RF and GaN amplifiers. Furthermore, the advanced design takes advantage of the chips’ insulating properties so the space between the heating element and the heat detection element can be filled to enable highly accurate heat detection. These features also help reduce the temperature rise of key components contributing to improved reliability at the system level. The Bourns® BTJ Series Thermal Jumper Chips are available now and are RoHS compliant and halogen free. | 18.12.2025 12:30:00 | Dec | News_2026-01-15_17.jpg | \images\News_2026-01-15_17.jpg | https://bourns.com/news/press-releases/pr/2025/12/18/bourns-introduces-thermal-jumper-chip-series-that-provides-an-excellent-thermal-dissipation-solution-in-a-compact-form-factor | bourns.com |
| Open-loop hall-effect Current Sensors for electric and hybrid Vehicles | Littelfuse announced the release of six new automo... | 13683 | Product Release | Open-loop hall-effect Current Sensors for electric and hybrid Vehicles | Littelfuse announced the release of six new automotive current sensors designed to enhance electric and hybrid vehicle performance, efficiency, and functional safety. The Littelfuse automotive qualified sensors provide precise, isolated current measurement across battery-management, motor-control, and pyro-fuse safety systems. Utilizing open-loop hall-effect technology, the sensors deliver reliable performance in compact, bus-bar-mounted form factors. Output configurations include analog-voltage and digital (CAN/LIN) communication, giving system designers flexibility in integrating with existing EV architectures. As EV and hybrid systems evolve, engineers face growing demands for high accuracy, fast response, and compliance with functional-safety standards. This current-sensor family helps OEMs and Tier 1 suppliers meet those challenges by offering scalable, ASIL-capable solutions that simplify design while improving efficiency, safety, and overall system reliability. Across the automotive qualified product family, nominal current ranges extend up to ±1500 A, with high total-error performance and minimal thermal drift. Models featuring CAN 2.0B communication include AUTOSAR E2E Profile 1A diagnostics and ASIL-C-capable current measurement, enabling integration into safety-critical systems such as battery control or disconnect units. | 18.12.2025 11:30:00 | Dec | News_2026-01-15_16.jpg | \images\News_2026-01-15_16.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-introduces-automotive-qualified-current-sensors-for-ev-battery-motor-and-safety-systems | littelfuse.com |
| High-Voltage DC Contactors support Functional Safety | TDK Corporation introduced the HVC27*MC series of ... | 12684 | Product Release | High-Voltage DC Contactors support Functional Safety | TDK Corporation introduced the HVC27*MC series of high-voltage DC contactors equipped with a mechanically linked, normally-closed auxiliary contact (mirror contact) compliant with IEC 60947-4-1. This feature provides precise contact position feedback for safety-critical applications in electric mobility and industrial energy systems. Measuring 86.5 x 95 x 44 mm³ and "weighing" 530 g, these gas-filled contactors are suited for battery disconnect units (BDUs), energy storage systems (ESS), DC fast charging, and uninterruptible power supplies (UPS). Designed for DC voltages of 1000 V, the HVC27*MC series is available in 300 A, 400 A, and 500 A continuous current versions, with a single-shot capability of up to 900 A at 1000 V in less than 20 ms. The safety component is fully bidirectional with polarity-free main terminals. A hermetically sealed and gas-filled ceramic arc chamber takes care of a safe disconnection. The normally closed auxiliary contact reliably reports the main contact state, enabling the immediate detection of switching anomalies or failures. Offered in versions with 12 V or 24 V coil voltage and UL, CE, and UKCA certifications, the contactors are ready for global deployment. Typical applications are in commercial vehicles, industrial machinery, and high-voltage mobility systems. | 17.12.2025 15:30:00 | Dec | news_2026-01-01_17.jpg | \images\news_2026-01-01_17.jpg | https://www.tdk-electronics.tdk.com/en/373388/company/press-center/press-releases/press-releases/tdk-adds-a-mirror-contact-to-the-hvc27-series-to-support-functional-safety/3659846 | tdk-electronics.tdk.com |
| Protection for sensitive Power Semiconductors | Bourns expanded its POWrFuse™ High-Power Fus... | 12680 | Product Release | Protection for sensitive Power Semiconductors | Bourns expanded its POWrFuse™ High-Power Fuses with the PF-SRC50E Series. Designed to protect today’s more sensitive power semiconductors, this series features 500 V DC and 690 V AC rated voltage with an interrupting rating of up to 100 kA. Delivering higher voltage protection support in a compact footprint (17.5 mm diameter x 46 mm length), these fuses are suited for power inverters, converters, rectifiers, AC/DC drives, Uninterruptible Power Supplies (UPS) and reduced voltage motor starters. The PF-SRC50E Series is engineered to meet the requirements of UL 248-13 and IEC 60269-4 (aR class) standards for dependable protection and safe operation in high-voltage AC and DC systems. The devices are offered in a bolt-down package. | 17.12.2025 11:30:00 | Dec | news_2026-01-01_13.jpg | \images\news_2026-01-01_13.jpg | https://www.bourns.com/news/press-releases/pr/2025/12/17/designed-to-protect-sensitive-power-semiconductors--bourns-announces-500-vdc-690-vac-rated-fuse-series | bourns.com |
| PMIC capable of harvesting full-range of hybrid indoor-outdoor PV Cells | e-peas will made the public debut of its AEM15820 ... | 13682 | Product Release | PMIC capable of harvesting full-range of hybrid indoor-outdoor PV Cells | e-peas will made the public debut of its AEM15820 power management IC (PMIC), the a single-chip PMIC capable of spanning the full dynamic range of hybrid indoor-outdoor PV cells. These hybrid PV cells have a wide power output that can vary from microwatts under indoor lighting to several watts when in direct sunlight. To manage this range, multi-PMIC solutions have previously been required, adding cost and complexity to the overall system designs. They are being implemented in a wide range of consumer applications, including sports or hiking computers and self-charging headphones, and will enable many more, such as PV-charged earbud cases and e-readers. Additional markets include remote security cameras, smart glasses, power banks, and smart-backpack power modules. It is optimized for use with both batteries and lithium-ion capacitors (LiC) and features an ultra-low-power cold start of 5 µW at 275 mV. | 17.12.2025 10:30:00 | Dec | News_2026-01-15_15.png | \images\News_2026-01-15_15.png | https://e-peas.com/news/ces-2026-e-peas-to-debut-aem15820-industrys-first-pmic-capable-of-harvesting-full-range-of-hybrid-indoor-outdoor-pv-cells/ | e-peas.com |
| Acquisition to Drive Custom Power IC Leadership | Cyient Semiconductors has signed a definitive agre... | 13672 | Industry News | Acquisition to Drive Custom Power IC Leadership | Cyient Semiconductors has signed a definitive agreement to acquire a majority stake in Kinetic Technologies, a global leader in power management, high-performance analog and mixed-signal ICs for a total consideration of up to USD 93 Mn. The combination establishes a scaled platform in the $40B+ power semiconductor market, accelerating Cyient Semiconductors’ growth trajectory across data centers, electrification, automotive, networking, industrial automation, and the fast-emerging edge AI compute segment. This acquisition is a game-changer for Cyient Semiconductors’ ambition to establish India’s first ASIC-led custom power semiconductor powerhouse. Bringing together Cyient Semiconductors’ design leadership with Kinetic Technologies’ proven portfolio of high-performance analog and mixed-signal ICs - including power conversion solutions, display power, protection, and interface solutions - the company is positioned to take a strong leadership position in high-growth markets. | 17.12.2025 10:00:00 | Dec | News_2026-01-15_5.jpg | \images\News_2026-01-15_5.jpg | https://cyientsemi.com/press-release/cyient-semiconductors-acquires-majority-stake-in-kinetic-technologies-to-drive-custom-power-ic-leadership-for-edge-ai-and-high-performance-compute-markets | cyientsemi.com |
| Brushed DC Motor Driver Ics | ROHM has developed two additional motor driver ICs... | 12676 | Product Release | Brushed DC Motor Driver Ics | ROHM has developed two additional motor driver ICs for brushed DC motors, BD60210FV (20 V, 2 channels) and BD64950EFJ (40 V, 1 channel). They are intended for use in home and office appliances such as refrigerators, air conditioners, printers, and robotic vacuum cleaners. The devices achieve a standby current of typically 0.0 µA (maximum: 1.0 µA). The BD60210FV can function as a dual H-bridge (2ch) motor driver with direct PWM control, capable of driving two DC brush motors, a bipolar stepper motor driver, or solenoid driver. Its H-bridge circuit configuration eliminates the need for a boost circuit, minimizing external components and contributing to space-saving and simplified design. It supports input voltage from 8 V to 18 V and 1 A/phase continuous current and 4 A/phase peak current. The BD64950EFJ features a single H-bridge (1ch) that supports both direct PWM control and constant current PWM control. Its low on-resistance design reduces heat generation. With a 40 V withstand voltage and 3.5 A continuous current (6 A peak), it is suitable for high-powered, high-voltage (24 V) DC brush motor applications. | 17.12.2025 07:30:00 | Dec | news_2026-01-01_9.jpg | \images\news_2026-01-01_9.jpg | https://www.rohm.com/news-detail?news-title=2025-12-17_news_motor&defaultGroupId=false | rohm.com |
| eBook provides Guidance on Designing 48V Power Delivery Networks | Vicor has published "Accelerate your move to a hig... | 13677 | Industry News | eBook provides Guidance on Designing 48V Power Delivery Networks | Vicor has published "Accelerate your move to a high-performance 48V power delivery network", a new 34-page eBook. This resource provides engineers and system designers with helpful tips and concepts to consider to transition from 12V power delivery networks (PDNs) to 48V. This free in-depth guide will help optimize power delivery to gain a competitive edge in the market. Today computing, automotive, and industrial applications demand higher performance and efficiency and traditional 12V architectures are reaching their limits. Higher performing 48V architectures that reduce I²R losses are emerging as the obvious solution which not only unlocks power system capabilities, it also enables new levels of innovation. Filled with useful insights and real-life applications, the informative eBook provides expert guidance on designing 48V power delivery networks to enhance the performance, efficiency and reliability of industrial products. Engineers can learn how the 48V PDN evolved, how to overcome power design challenges and how others have implemented successful power delivery networks that deliver competitive advantage. Readers can also learn how to leverage high-performance power modules to quickly prototype and implement a 48V PDN. "With the rapid growth of AI and the infusion of higher voltage electrification, power delivery can provide a competitive advantage," said David Krakauer, VP of Marketing, Vicor. "This eBook explores why 48V distribution is quickly becoming the standard for next-generation designs, delivering benefits such as reduced conduction losses, improved thermal performance and smaller, lighter power delivery networks. This eBook offers the insights you need to accelerate your transition from 12V to 48V." | 16.12.2025 15:00:00 | Dec | News_2026-01-15_10.jpg | \images\News_2026-01-15_10.jpg | https://www.vicorpower.com/documents/eBook/Vicor-48V-eBook.pdf | vicorpower.com |
| Small Ferrite-Core wirewound Chip Inductors | Coilcraft’s 016008F series is claimed to be the wo... | 12678 | Product Release | Small Ferrite-Core wirewound Chip Inductors | Coilcraft’s 016008F series is claimed to be the world’s smallest wirewound ferrite chip inductor, designed for high-frequency applications where board space is constrained. With dimensions of 0.5 mm x 0.25 mm x 0.38 mm, it offers a DCR of 0.18 Ohms. Typical applications are compact devices such as smartphones, IoT modules, and wearables. | 16.12.2025 09:30:00 | Dec | news_2026-01-01_11.jpg | \images\news_2026-01-01_11.jpg | https://www.coilcraft.com/en-us/products/rf/ferrite-core-chip-inductors/01005-(0402)/016008f/ | coilcraft.com |
| PSMA Magnetics Committee and PELS TC2 High Frequency Magnetics Workshop | The PSMA Magnetics Committee and IEEE PELS are cur... | 13668 | Event News | PSMA Magnetics Committee and PELS TC2 High Frequency Magnetics Workshop | The PSMA Magnetics Committee and IEEE PELS are currently planning to conduct the eleventh Power Magnetics at High Frequency Workshop on Saturday, March 21, 2026, which is the day before and at the same venue as APEC 2026 in San Antonio, TX. The 2026 workshop will build on the ongoing dialogue generated throughout the first ten workshops. The purpose of this workshop is to explore recent improvements in magnetic materials, coil (winding) design, construction, and fabrication, as well as evaluation techniques, characterization methods, and modelling and simulation tools. The workshop targets the advancements deemed necessary by the participants for power magnetics to meet the technical expectations and requirements of new market applications where higher operating frequencies and emerging topologies are driven by continuous advances in circuits topologies and semi-conductor devices. The target audiences for the 2026 Power Magnetics @ High Frequency workshop include the designers of power magnetic components for use in electronic power converters, those who are responsible to implement the most technologically advanced power magnetic components necessary to achieve higher power densities, specific physical aspect ratios such as low profile, higher power efficiencies and improved thermal performance. The target audience also includes people involved in the supply chain for the power magnetics industry ranging from manufacturers of magnetic materials and magnetic structures, fabricators of magnetic components, providers of modelling and simulation software as well as manufacturers of test and characterization equipment. | 15.12.2025 06:00:00 | Dec | News_2026-01-15_1.jpg | \images\News_2026-01-15_1.jpg | https://psma.com/technical-forums/magnetics/workshop | psma.com |
| FOC-based BLDC Motor Control with Power Regulation up to 15A | BLDC FOC 2 Click is a new motor control Click boar... | 13680 | Product Release | FOC-based BLDC Motor Control with Power Regulation up to 15A | BLDC FOC 2 Click is a new motor control Click board™ from MIKROE. The compact Click add-on boards enable developers to rapidly provide proof-of-concept, then prototype and code new embedded projects. BLDC FOC 2 Click provides provides robust and reliable control of three-phase brushless DC (BLDC) motors using advanced Field-Oriented Control (FOC) techniques, ensuring smooth operation, high efficiency and low acoustic noise. Comments Nebojsa Matic, CEO of MIKROE: "This new Click board is ideal for automotive and industrial applications such as battery cooling fans, radiator fans, and fuel or oil pump control systems. It is part of our 140+ strong family of motor control Click boards and over 850 projects - with working code - featuring the BLDC FOC 2 Click can be found on MIKROE’s embedded projects platform, EmbeddedWiki." BLDC FOC 2 Click is based on the A89307, an automotive FOC BLDC motor controller from Allegro Microsystems, designed to deliver up to 15A of output current across a wide voltage range from 4.4V to 30V. It supports multiple operating modes, including constant speed, torque, power and open-loop control, while offering flexible configuration via EEPROM and I2C interface for parameter setting, ON/OFF control and speed feedback. It also integrates Allegro’s proprietary Soft-On Soft-Off (SOSO) feature for quiet transitions, comprehensive protection mechanisms, and both analog and digital control mode. | 12.12.2025 08:30:00 | Dec | News_2026-01-15_13.jpg | \images\News_2026-01-15_13.jpg | https://www.mikroe.com/bldc-foc-2-click | mikroe.com |
| Co-Development on SMPS Solutions for AI Server Power Supplies in Korea | The French company Wise Integration and the Korean... | 12673 | Industry News | Co-Development on SMPS Solutions for AI Server Power Supplies in Korea | The French company Wise Integration and the Korean companies Powernet and KEC have signed a strategic memorandum of understanding (MoU) to co-develop next-generation switched-mode power supply (SMPS) solutions designed specifically for AI server applications in South Korea. The partnership aligns with the country’s push to expand AI infrastructure and build out the next generation of high-density data centers. Under the agreement, Wise Integration will supply its GaN power devices, digital-control expertise and technical support. Powernet Technologies will lead the development of SMPS designs using Wise’s WiseGan® and WiseWare® technologies. KEC Corporation will manage backend manufacturing, including module integration and system-in-package production tailored to the thermal and reliability demands of AI-server racks. The collaboration builds on an earlier partnership between Wise Integration and Powernet, launched to serve OEMs that require compact, digitally controlled power-supply systems for faster, smaller and more energy-efficient electronic equipment. | 11.12.2025 11:00:00 | Dec | news_2026-01-01_6.jpg | \images\news_2026-01-01_6.jpg | https://wise-integration.com/wise-integration-powernet-and-kec-agree-to-co-develop-advanced-smps-solutions-for-ai-server-power-supplies-in-korea/ | wise-integration.com |
| Dual-Output 400 W Module for Configurable Power Supplies | Advanced Energy Industries introduced a dual-outpu... | 12679 | Product Release | Dual-Output 400 W Module for Configurable Power Supplies | Advanced Energy Industries introduced a dual-output 24 V/24 V module for its NeoPower™ family of configurable power supplies, delivering up to 400 W (200 W per output) in a compact 2.5-inch form factor. This added module enables up to a total of 16 isolated outputs per power supply, streamlining system design for engineers in industrial, medical and test environments. Its power density is 18 W/in³. The digitally controlled module is certified according to IEC/EN/UL 62368-1 (industrial), IEC/EN 60601-1 (medical), and SEMI F47. Target applications include medical, industrial, semiconductor and test and measurement. | 11.12.2025 10:30:00 | Dec | news_2026-01-01_12.png | \images\news_2026-01-01_12.png | https://www.advancedenergy.com/de-de/about/news/press/advanced-energy-unveils-a-dual-output-400-w-module/ | advancedenergy.com |
| Strategic Collaboration of Automotive Tier-1 Supplier and Semiconductor Manufacturer | Onsemi extended its strategic engagement with FORV... | 12672 | Industry News | Strategic Collaboration of Automotive Tier-1 Supplier and Semiconductor Manufacturer | Onsemi extended its strategic engagement with FORVIA HELLA with the adoption of onsemi’s PowerTrench® T10 MOSFET technology across its automotive platforms. Onsemi’s PowerTrench T10 MOSFET technology delivers high efficiency with low conduction and switching losses, enabling high power density in a compact footprint. The collaboration is expected to "deliver smarter automotive power solutions with superior efficiency and optimized performance". | 11.12.2025 10:00:00 | Dec | news_2026-01-01_5.jpg | \images\news_2026-01-01_5.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-and-forvia-hella-extend-strategic-collaboration-with-next-generation-power-technology | onsemi.com |
| Solder Paste for High Print Consistency and Easy Cleanability | Indium Corporation announced the global availabili... | 13681 | Product Release | Solder Paste for High Print Consistency and Easy Cleanability | Indium Corporation announced the global availability of SiPaste® C312HF, a halogen-free, cleanable solder paste formulated for fine-feature printing. Designed with Type 7 powder for aperture sizes down to 60µm, it enables fine-feature printing in advanced system-in-package applications. SiPaste C312HF boosts process yields that combine stencil print transfer efficiency and stencil life with consistent printing, response-to-pause, and reflow performance. SiPaste C312HF post-reflow flux residue can be cleaned with a standard cleaning process using semi-aqueous chemistries or a saponifier, or it can be used as a standard no-clean paste in processes where post-reflow cleaning is not required. Indium Corporation’s SiPaste series is specifically designed for fine-feature printing with fine powders ranging from Type 5 to Type 8, including the SiPaste C312HF with Type 7 powder. The products help Avoid the Void®, reduce slumping, and demonstrate consistent superior printing performance. | 11.12.2025 09:30:00 | Dec | News_2026-01-15_14.png | \images\News_2026-01-15_14.png | https://www.indium.com/press-releases/indium-corporation-launches-new-solder-paste-for-high-print-consistency-and-easy-cleanability/ | indium.com |
| Power Factor Correction Market to surpass $8.2 Billion by 2033 | The global Power Factor Correction (PFC) Market is... | 12671 | Industry News | Power Factor Correction Market to surpass $8.2 Billion by 2033 | The global Power Factor Correction (PFC) Market is poised for substantial growth, projected to rise from an estimated $4.6 billion in 2024 to approximately $8.2 billion by 2033, reflecting a robust Compound Annual Growth Rate (CAGR) of 6.5 % over the forecast period. This is one of the results of a market research report from Market Intelo. The PFC market’s expansion is fueled by a combination of regulatory pressure, cost-saving benefits, and technological advancements. The key growth catalysts are strict regulatory compliance, energy cost optimization, rapid industrialization and urbanization as well as equipment protection. The market researchers have figured out the following emerging technological trends: Firstly, there is a dominance of active PFCs, which means a shift from traditional passive systems to Active Power Factor Correction (APFC) for better efficiency, real-time response, and harmonic mitigation. The second trend is smart grid compatibility, because advanced PFC solutions are essential for grid stability, managing power fluctuations from intermittent renewable energy sources like solar and wind. The third trend are modular and compact designs: Developing smaller, more efficient PFC devices for integration into a broader range of applications, including smaller commercial units and EV charging infrastructure. Therefore, the company says that the power factor correction market is on a trajectory to become an essential component of the global Digital Energy Transition. The convergence of AI-driven power quality analytics, miniaturization of components, and a relentless global focus on decarbonization is said to ensure sustained, high-value growth through 2033. PFC solutions will evolve from mere corrective devices to fully integrated, intelligent energy optimization hubs within the industrial and commercial electrical infrastructure. | 11.12.2025 09:00:00 | Dec | news_2026-01-01_4.png | \images\news_2026-01-01_4.png | https://marketintelo.com/report/power-factor-correction-market | marketintelo.com |
| Power Semiconductors: Global Distribution Network | Navitas Semiconductor has expanded its distributio... | 12670 | Industry News | Power Semiconductors: Global Distribution Network | Navitas Semiconductor has expanded its distribution agreement with Avnet, making Avnet a globally franchised strategic distribution partner for Navitas. The deal is part of the ongoing consolidation of Navitas’ franchised distribution partners. Under the terms of the partnership, Avnet will supply technical and commercial expertise for Navitas’ GaN and SiC, high-voltage and high-power wide bandgap semiconductor devices. This will better support the growth of AI data centers, high performance computing, renewable energy, grid infrastructure, and industrial electrification. | 11.12.2025 08:00:00 | Dec | news_2026-01-01_3.jpg | \images\news_2026-01-01_3.jpg | https://navitassemi.com/navitas-expands-global-distribution-network-with-avnet/ | navitassemi.com |
| Surface-Mount Fuse | With the Surface-Mount Fuse USE 2410 SCHURTER intr... | 12683 | Product Release | Surface-Mount Fuse | With the Surface-Mount Fuse USE 2410 SCHURTER introduces a quick-acting F fuse which is completely without internal solder joints. AEC-Q200 tested, sealed against potting compounds and designed for extreme temperatures, the USE 2410 is intended for protection in applications ranging from industrial and automotive to medical technology. It is designed for 125-250 V<sub>AC</sub> and 86-125 V<sub>DC</sub>. In the temperature range from -55 °C to 125 °C the breaking capacity is up to 200 A, while the rated currents are specified from 0.6 to 10 A. Manufactured from UL 94V-0 materials – fiber-reinforced plastic and gold-plated copper terminals – the fuse is certified to UL, VDE, RoHS and REACH. Typical applications include battery-operated systems, LED drivers, ballasts, medical and industrial equipment, power supplies, and white goods. In automotive (IATF 16949) or aerospace, it protects against overload and short circuit. | 10.12.2025 14:30:00 | Dec | news_2026-01-01_16.jpg | \images\news_2026-01-01_16.jpg | https://www.schurter.com/en/news/use-2410-wire-in-air-redefined | schurter.com |
| Michael Budde elected President of ESIA | The General Assembly of the European Semiconductor... | 13676 | People | Michael Budde elected President of ESIA | The General Assembly of the European Semiconductor Industry Association (ESIA) has elected Michael Budde, President Mobility Electronics at Bosch, as the organisation’s new President for the next two years. ESIA represents and promotes the common interests of the Europe-based semiconductor industry towards the European institutions and stakeholders. Mr Budde is succeeding Infineon Technologies’ CEO Jochen Hanebeck. Michael Budde has served as divisional chief executive since October 2022. His career within Bosch spans over two-and-a-half decades of leadership experience and garnered him comprehensive expertise of the automotive industry. Mr Budde had gathered insights in electrical drives, battery systems, and various sales & marketing roles, including an international assignment in the United States. Under his guidance, Bosch has strengthened its position in semiconductor-based solutions for consumer and mobility applications, leveraging his deep understanding in the automotive industry and a close collaboration with OEMs. He holds a degree in mechanical engineering from the Rheinische Fachhochschule (RFH) in Cologne, Germany. | 10.12.2025 14:00:00 | Dec | News_2026-01-15_9.jpg | \images\News_2026-01-15_9.jpg | https://www.eusemiconductors.eu/esia/news | eusemiconductors.eu |
| Current Sense Resistor | Stackpole’s CSSU2512 current sense resistor shows ... | 12682 | Product Release | Current Sense Resistor | Stackpole’s CSSU2512 current sense resistor shows a 5-watt power rating in a standard 2512 footprint. Its all-metal construction and thermally conductive design substantially achieves thermal performance on par with other 2512-size current sense chips rated at just 3 W. The devices are available in resistance values from 1 to 10 mΩ, with 1 % tolerance and a 50 ppm temperature coefficient of resistance (TCR). The resistor complies to AEC according to CSSU2512. | 10.12.2025 13:30:00 | Dec | news_2026-01-01_15.png | \images\news_2026-01-01_15.png | https://www.seielect.com/catalog/SEI-CSSU.pdf | seielect.com |
| 1200 V SiC Modules | SemiQ has expanded its third-generation QSiC&trade... | 12681 | Product Release | 1200 V SiC Modules | SemiQ has expanded its third-generation QSiC™ MOSFET product line by seven devices, including high-current S3 half-bridge (for example GCMX2P3B120S3B1-N), B2T1 six-pack (e. g. GCMX020A120B2T1P) and B3 full-bridge packages like the GCMX008B120B3H1P. The devices are engineered for current capabilities of up to 608 A and a junction-to-case thermal resistance of just 0.07 °C/W (in the 62 mm standard S3 half-bridge format). The six-pack modules integrate the three-phase power stage and have an R<sub>DSon</sub> range of 19.5 to 82 mΩ. They are designed for motor drives and advanced AC/DC converters. The full-bridge modules deliver current capabilities of up to 120 A and an on-resistance down to 8.6 m&ohm,. This combination, coupled with a thermal resistance of 0.28 °C/W is intended e. g. for single-phase inverters and high-voltage DC/DC systems. The devices are breakdown voltage tested to over 1350 V. | 10.12.2025 12:30:00 | Dec | news_2026-01-01_14.jpg | \images\news_2026-01-01_14.jpg | https://semiq.com/semiq-launches-gen3-1200-v-s3-modules-with-record-current-density-for-high-power-industrial-and-ev-applications/ | semiq.com |
| CWIEME Berlin unveils Electric Motor Forum | CWIEME Berlin, an event for coil winding, transfor... | 12657 | Event News | CWIEME Berlin unveils Electric Motor Forum | CWIEME Berlin, an event for coil winding, transformer, electric motor and e-mobility technologies, has announced the launch of the Electric Motor Forum, a brand-new feature debuting at the 2026 edition of the show in Berlin, May 19 - 21. The Electric Motor Forum will provide a dedicated space for the entire European electric motor industry to come together, from automotive and industrial manufacturers to HVAC and consumer applications, in an environment designed to foster collaboration, innovation and community. Developed in response to visitor feedback and the growing demand for clearer product zoning, the new forum will serve as a strategic cluster that mirrors the success of the 2025 Transformer Hub in Hall 27, which became one of the show’s best-attended areas. The Electric Motor Forum will feature a vibrant mix of exhibition stands, networking areas and interactive content, including panel discussions, roundtables and expert-led talks. Content will explore key themes such as supply chain resilience, automation and sustainable materials. An Innovation Zone, dedicated Power Hub and Electric Motor Stage will help create a true content hub - not just a hall, but a dynamic meeting point for suppliers, buyers and policymakers to discuss shared challenges and opportunities. | 10.12.2025 11:00:00 | Dec | news_2025-12-15_6.jpg | \images\news_2025-12-15_6.jpg | https://berlin.cwiemeevents.com/home | berlin.cwiemeevents.com |
| SiC MOSFET Family extended | Infineon Technologies launches packages for the Co... | 12658 | Product Release | SiC MOSFET Family extended | Infineon Technologies launches packages for the CoolSiC™ MOSFET 750 V G2 technology for high system efficiency and power density in automotive and industrial power conversion applications. These devices are now available in a range of packages, including Q-DPAK and D2PAK, offering a portfolio with typical R<sub>DS(on)</sub> values up to 60 mΩ at 25 °C. Typical applications are, for example, onboard chargers and HV-LV DC/DC converters in the automotive sector, server and telecom SMPS, along with EV charging infrastructure in the industrial applications. R<sub>DS(on)</sub> values of 4 mΩ enable applications that require exceptional static-switching performance, such as eFuse, high-voltage battery disconnect switches, solid-state circuit breakers, and solid-state relays. One of the key features of the CoolSiC MOSFET 750 V G2 technology is its top-side cooled Q-DPAK package, which provides adequate thermal performance and reliability. Additionally, the CoolSiC MOSFETs 750 V G2 offer a combination of a typical threshold voltage V<sub>GS(th)</sub> of 4.5 V at 25 °C. Furthermore, the technology allows for extended gate driving capabilities, supporting static gate voltages of up to -7 V and transient gate voltages of up to -11 V. | 10.12.2025 06:30:00 | Dec | news_2025-12-15_7.jpg | \images\news_2025-12-15_7.jpg | https://www.infineon.com/market-news/2025/infpss202512-036 | infineon.com |
| Power Management Resource Center | Mouser Electronics announces its comprehensive pow... | 13673 | Industry News | Power Management Resource Center | Mouser Electronics announces its comprehensive power management resource center. With the proliferation of compact, high-performance, and battery-operated devices, power management design is critical to achieving optimal performance. By leveraging new advancements in power management, such as smart grid management technology, DC microgrids can enhance energy efficiency and power quality. Their native DC architecture provides seamless integration with DC loads and renewable energy systems, such as EV charging infrastructure. Another method of power management is energy harvesting, where improved conversion efficiency in solar, motion, and thermal harvesting techniques extends battery life or even enables completely battery-free operation. For chip-level power and performance, modern embedded systems today utilize configurable logic blocks (CLBs). CLBs enable hardware-based functions, such as timing control and power sequencing, resulting in faster response times, reduced CPU load, and lower power consumption. Together, these advancements create a balanced system where power is generated, distributed, and consumed with maximum efficiency, fundamentally improving power management in electronics. Mouser’s technical team and trusted manufacturing partners tailor the resource center content to provide a trusted source of articles, blogs, eBooks, and new products from top manufacturers for power management. The hub also offers infographics on battery energy storage systems (BESS), helping professionals understand the system complexities and how to select the best-suited components. For engineers looking to stay ahead of the accelerating pace of advanced power management, the resource center serves as a valuable resource. | 09.12.2025 11:00:00 | Dec | News_2026-01-15_6.png | \images\News_2026-01-15_6.png | https://eu.mouser.com/newsroom/publicrelations-resources-power-management-2025final?srsltid=AfmBOor6Yn-2RfsN_tVleV_OZC5sMSA51N4TI7WwI34mwEhO4Am-gTBK | mouser.com |
| Asymmetrical TVS Diodes for 12 V Battery Systems | Littelfuse launched the TPSMB Asymmetrical Series ... | 12677 | Product Release | Asymmetrical TVS Diodes for 12 V Battery Systems | Littelfuse launched the TPSMB Asymmetrical Series TVS Diodes (TPSMB2412, TPSMB2616, TPSMB2818, TPSMB3018). These devices are specifically designed for 12 V battery anti-reverse protection, delivering superior performance compared to traditional symmetrical bi-directional TVS solutions. Unlike conventional approaches that often require multiple components, the TPSMB Asymmetrical Series provides a single-component solution that protects anti-reverse MOSFETs, diodes, and DC/DC converter ICs from both positive and negative surges. The asymmetrical clamping capability ensures much lower clamping voltage from negative surges, allowing engineers to select lower-rated MOSFETs or diodes. This approach reduces conduction losses, simplifies design, and lowers overall BOM costs. It provides asymmetrical protection with low positive clamping (24–30 V) and low negative clamping (12–18 V). A single device integrated in a DO-214AA surface-mount package replaces multiple Zeners/TVS diodes, while the peak pulse power is 600 W with a response time of less than 1 ns and up to 30 kV ESD dissipation. The devices are automotive-qualified according to AEC-Q101 and operate with a junction temperature range of -65 °C to 175 °C. | 09.12.2025 08:30:00 | Dec | news_2026-01-01_10.jpg | \images\news_2026-01-01_10.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/tpsmb-asymmetrical-tvs-diodes-cut-conduction-loss-and-bom-cost-in-12v-battery-systems | littelfuse.com |
| Power Partnership for in-orbit AI Processing | Vicor has partnered with Spacechips, developer of ... | 12653 | Industry News | Power Partnership for in-orbit AI Processing | Vicor has partnered with Spacechips, developer of space-electronics solutions for satellites and spacecraft, to design power-dense, reliable transponders for in-orbit AI processing. Spacechips’ AI1 transponder is radiation-tolerant, rugged and compact featuring Vicor’s FPA power modules (Factorized Power Architecture). The demand for smaller satellites with sophisticated computational capabilities and reliable and robust onboard processor systems to support the 5 to 10 year duration of a mission, is pushing the limits of the latest ultra deep submicron FPGAs and ASICs and their power delivery networks. These high-performance processors have demanding, low-voltage, high-current power requirements and their system design is further compounded by the complexities of managing thermal and radiation conditions in space. In response, Spacechips has introduced its AI1 transponder, a small, on-board processor card containing an ACAP (Adaptive Compute Acceleration Platform) AI accelerator. The smart, re-configurable receiver and transmitter delivers up to 133 tera operations per second (TOPS) of performance that enables new Earth-observation, in-space servicing, assembly and manufacturing (ISAM), signals intelligence (SIGINT), and intelligence, surveillance and reconnaissance (ISR) and telecommunication applications to support real-time, autonomous computing while ensuring the reliability and longevity to complete longer missions. FPA is a power delivery system design that separates the functions of DC/DC conversion into independent modules. In Vicor’s radiation tolerant modules, the bus converter module (BCM) provides the isolation and step down to 28 V, while the pre-regulator module (PRM) provides regulation to a voltage transformation module (VTM) or current multiplier that performs the 28 V DC transformation to 0.8 V. | 09.12.2025 07:00:00 | Dec | news_2025-12-15_2.jpg | \images\news_2025-12-15_2.jpg | https://www.vicorpower.com/press-room/spacechips-drives-imaginative-new-ai-enabled-satellite-applications | vicorpower.com |
| Silicon Valley Headquarters and Munich R&D Office opened | Empower Semiconductor announced an expansion of it... | 12652 | Industry News | Silicon Valley Headquarters and Munich R&D Office opened | Empower Semiconductor announced an expansion of its global operations with the opening of its headquarters in Milpitas, California, and the establishment of a dedicated research and development (R&D) center in Munich, Germany. These strategic investments follow the company’s series D financing round. The expanded Milpitas space is purpose-built to support rapid development of Empower’s next-generation vertical power-delivery platforms and derivatives. The Munich site serves as a regional innovation hub. | 09.12.2025 06:00:00 | Dec | news_2025-12-15_1.JPG | \images\news_2025-12-15_1.JPG | https://www.empowersemi.com/empower-semiconductor-expands-global-footprint-with-new-silicon-valley-headquarters-and-munich-rd-office/ | empowersemi.com |
| GaN Communications Manager appointed | As of January 1, 2026 Maurizio Di Paolo Emilio wil... | 12656 | People | GaN Communications Manager appointed | As of January 1, 2026 Maurizio Di Paolo Emilio will become Director of Global Marketing Communications of EPC – Efficient Power Conversions. Maurizio holds a Ph.D in physics and is a content editor & technical writer, who has put specific focus on power electronics, wide bandgap semiconductors, renewable energy as well as space electronics. He decided to take this career step in order to be "at the forefront of the transition from silicon to the GaN era". He thinks that the rise of GaN is not just a simple technological upgrade but a fundamental change with profound impact on the world of AI (Artificial Intelligence) including scalability, sustainability, and ethics. Maurizio aims "to craft a communication strategy that blends technical storytelling with technological innovation, helping designers and product teams navigate complex technologies". | 08.12.2025 10:00:00 | Dec | news_2025-12-15_5.jpg | \images\news_2025-12-15_5.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3250/epc-appoints-maurizio-di-paolo-emilio-as-director-of-global-marketing-communications | epc-co.com |
| Strategic Partnership to accelerate GaN Adoption in India | Navitas Semiconductor and Cyient Semiconductors, a... | 12654 | Industry News | Strategic Partnership to accelerate GaN Adoption in India | Navitas Semiconductor and Cyient Semiconductors, a provider of ASIC, ASSP and power solutions, have announced a strategic long-term partnership intended to advance the adoption of GaN technology in India and establish a complete, end-to-end GaN ecosystem. Through this partnership, Navitas Semiconductor and Cyient Semiconductors intend to co-develop GaN products, digital and mixed signal ICs, GaN based system modules and design enablement platforms targeting India’s high voltage, high power market segments such as AI data centers, electric mobility, performance computing, energy grid infrastructure and industrial electrification. The partnership seeks to build a robust local supply chain and manufacturing ecosystem in support of the Indian Government’s "Make in India" initiative. In addition, through this partnership Navitas and Cyient Semiconductor aim to deploy IC technology in accelerating solution development for high voltage and high-power markets. This is expected to include products based on Navitas’ existing GaN technologies, along with new products tailored for India’s unique market needs. This initiative is intended to empower Indian design houses and OEMs with locally sourced GaN components and manufacturing support, enabling faster development cycles and reducing barriers to GaN adoption in India. | 08.12.2025 08:00:00 | Dec | news_2025-12-15_3.jpg | \images\news_2025-12-15_3.jpg | https://navitassemi.com/navitas-cyient-semiconductors-enter-into-a-strategic-partnership-to-accelerate-gan-adoption-in-indias-ai-mobility-industrial-and-energy-markets/ | navitassemi.com |
| Foundry Service for SiC MOSFETs | Through its XbloX platform, the analog/mixed-signa... | 12655 | Industry News | Foundry Service for SiC MOSFETs | Through its XbloX platform, the analog/mixed-signal and specialty foundry X-FAB is offering direct access to a standardized yet flexible set of SiC process technologies that accelerate the development of advanced power devices. From rapid prototyping to full production, the modular and fully scalable XbloX platform helps SiC device developers to expedite engineering assessments and technology release, with production starts that are claimed to be up to nine months faster than traditional methods. The standardized module configuration of the XbloX WBG discrete foundry model imparts two major benefits for those designing or refining advanced SiC devices. Firstly, X-FAB takes on process development activities with the introduction of a Process Installation Kit (PIK), where design and implant recipes provide the key differentiators. Secondly, the use of XbloX takes care that wafer manufacturing at X-FAB becomes a highly scalable activity in line with application requirements, differing considerably from the less scalable production provided by a traditional foundry model for customer-specific SiC technologies. The planning phase, for example, is claimed to be up to six times shorter than that required by conventional approaches. | 04.12.2025 09:00:00 | Dec | news_2025-12-15_4.jpg | \images\news_2025-12-15_4.jpg | https://www.xfab.com/news/details/article/x-fab-xblox-accelerates-time-to-market-for-scalable-high-performance-sic-mosfet-solutions | xfab.com |
| SiC MOSFETs in TOLL package | ROHM has begun mass production of the SCT40xxDLL s... | 12659 | Product Release | SiC MOSFETs in TOLL package | ROHM has begun mass production of the SCT40xxDLL series of SiC MOSFETs in TOLL (TO-Leadless) packages. Compared to conventional packages (TO-263-7L) with equivalent voltage ratings and on-resistance, these packages offer approximately 39 % improved thermal performance. This enables high-power handling despite their compact size and low profile. It is suited for industrial equipment such as server power supplies and ESS (Energy Storage Systems) where the power density is increasing, and low-profile components are required to enable miniaturized product design. The thickness of the devices is 2.3mm thickness – roughly half that of conventional packaged products. Furthermore, while most standard TOLL package products are limited by a drain-source rated voltage of 650 V, these products support up to 750 V. This allows for lower gate resistance and increased safety margin for surge voltages, contributing to reduced switching losses. The lineup consists of six models with on-resistance ranging from 13 mΩ to 65 mΩ. | 04.12.2025 07:30:00 | Dec | news_2025-12-15_8.jpg | \images\news_2025-12-15_8.jpg | https://www.rohm.com/news-detail?news-title=2025-12-04_news_sic-mosfet&defaultGroupId=false | rohm.com |
| Film Capacitors for the Mains Input | Würth Elektronik introduced a series of WCAP-FTY2 ... | 12665 | Product Release | Film Capacitors for the Mains Input | Würth Elektronik introduced a series of WCAP-FTY2 film capacitors which is optimized for use in mains noise suppression and complies with X1 or Y2 safety classes in accordance with IEC 60384-14. The high impulse dielectric strength compared to X2 capacitors, along with other product-specific parameters, is confirmed by VDE with ENEC10 certification. The company’s WCAP-FTY2 series film capacitors are interference suppression capacitors for use as X1 or Y2 capacitors. When used as an X1 capacitor, it is placed between the phase (L) and neutral conductor (N). In a Y2 application, the capacitor is placed between the phase (L) and ground (PE) or between the neutral conductor and ground. As metallized film capacitors, the components are designed to be self-healing, making them particularly fail-safe. Their primary use is as mains filters in household appliances and interference suppression in industrial applications, such as inverters and motor control systems. | 03.12.2025 13:30:00 | Dec | news_2025-12-15_14.jpg | \images\news_2025-12-15_14.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=wcap-fty2 | we-online.com |
| Foil Resistor Series for High-Precision, High-Power Applications | Bourns released four Riedon™ Foil Resistor S... | 12667 | Product Release | Foil Resistor Series for High-Precision, High-Power Applications | Bourns released four Riedon™ Foil Resistor Series. The FPM Series, FPV Series, FWP2324 Series and FPY Series are designed for high-precision, high-power applications. The foil resistors can achieve up to 1 ppm/°C and ±0.005 percent TCR and minimal long-term drift. They are constructed with a metal foil resistive element mounted on a ceramic substrate that provides good heat conductivity. The devices are suited for a variety of current sense, industrial, consumer and telecommunications applications as well as for test and measurement equipment, renewable energy and power conversion systems and industrial automation platforms, where consistent accuracy, stable performance over varying conditions and long-term reliability are essential. While the FWP2324 Series is integrated in a 4-pin rectangular package, the FPY Series uses a 2-pin rectangular package, and the FPM and FPV Series are housed in a 4-pin package with an isolated backplate. | 02.12.2025 15:30:00 | Dec | news_2025-12-15_16.jpg | \images\news_2025-12-15_16.jpg | https://www.bourns.com/news/press-releases/pr/2025/12/02/bourns-announces-four-foil-resistor-series-in-various-package-options-to-match-application-specific-requirements | bourns.com |
| MLCCs in compact 3225M for rated Voltages of 1.25 kV | Murata started mass production of its multilayer c... | 12666 | Product Release | MLCCs in compact 3225M for rated Voltages of 1.25 kV | Murata started mass production of its multilayer ceramic capacitor (MLCC) featuring a capacitance of 15 nF, a rated voltage of 1.25 kV, and C0G characteristics in the compact 3225M (3.2 mm x 2.5 mm / 1210-inch) size. This product is suitable for onboard chargers (OBCs) in electric vehicles (EVs) and power supply circuits in high-performance consumer devices. The MLCCs are designed for an operating temperature range from -55 °C to +125 °C, while the capacitance range spans from 4.7 nF to 15 nF, with a tolerance of ±1 % to ±5 %. | 02.12.2025 14:30:00 | Dec | news_2025-12-15_15.jpg | \images\news_2025-12-15_15.jpg | https://www.murata.com/en-eu/news/capacitor/ceramiccapacitor/2025/1202 | murata.com |
| MOSFET for 48 V Hot Swap Applications in AI Servers | Alpha and Omega Semiconductor announced its AOLV66... | 12660 | Product Release | MOSFET for 48 V Hot Swap Applications in AI Servers | Alpha and Omega Semiconductor announced its AOLV66935, a 100 V High Safe Operating Area (SOA) MOSFET in an LFPAK 8x8 package. This MOSFET is designed as a solution for 48 V Hot Swap architectures in AI servers. The AOLV66935 utilizes AOS’ 100 V AlphaSGT™ proprietary MOSFET technology that combines the advantages of trench technology for low on-resistance with high SOA capability. AOS has tested and characterized the SOA at 25 °C as well at higher operating conditions of 125 °C giving system architects the confidence that the device will operate reliably under harsh conditions. The MOSFET’s LFPAK 8x8 gull-wing constructed package is 60 percent smaller compared to the TO-263 (D2PAK) package. The R<sub>DS(on)</sub> is specified with 1.86 mΩ at V<sub>GS</sub> = 10 V. | 02.12.2025 08:30:00 | Dec | news_2025-12-15_9.jpg | \images\news_2025-12-15_9.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-enables-48v-hot-swap-ai-servers-new-high-soa-mosfet-lfpak-8x8 | aosmd.com |
| High Voltage IGBT Modules | Mitsubishi Electric Corporation launched standard-... | 12675 | Product Release | High Voltage IGBT Modules | Mitsubishi Electric Corporation launched standard-isolation (6.0 kV<sub>rms</sub>) and high-isolation (10.2 kV<sub>rms</sub>) modules in its 4.5 kV/1,200 A XB Series of high-voltage IGBTs. These power semiconductors achieve high moisture resistance for more efficient and reliable inverters used in large industrial equipment, such as railcars, operating in diverse environments including outdoors. These modules (Dimensions 140 x 190 x 38 mm³) use IGBT elements that incorporate Mitsubishi Electric’s proprietary relaxed field of cathode (RFC) diode and carrier-stored trench-gate bipolar transistor (CSTBT1) structure. Specific structures for electric field relaxation and surface charge control enabled Mitsubishi Electric to reduce the chip’s termination region size by about 30 % while also achieving about 20 times greater moisture resistance than existing products. In addition, the module reduces total switching loss by approximately 5 % compared to previous models, and reverse-recovery safe-operating area (RRSOA) tolerance is about 2.5 times greater than that of compared to previous models. By maintaining the same external dimensions as existing products for easy replacement, the module simplifies and shortens the process of designing new inverters. | 02.12.2025 06:30:00 | Dec | news_2026-01-01_8.jpg | \images\news_2026-01-01_8.jpg | https://www.mitsubishielectric.com/en/pr/2025/1202/ | mitsubishielectric.com |
| 3300 V and 2300 V Silicon Carbide Devices | Navitas Semiconductor announced the sample availab... | 12663 | Product Release | 3300 V and 2300 V Silicon Carbide Devices | Navitas Semiconductor announced the sample availability of its 3300 V and 2300 V ultra-high voltage (UHV) products in power module, discrete and known good die (KGD) formats. These SiC products are based on Navitas’ fourth-generation GeneSiC™ platform which uses a TAP architecture to implement a multi-step e-field management profile. SiCPAK™ G+ power module packages are used for both, half-bridge and full-bridge circuit configurations. Key features of the SiCPAK™ G+ power modules also include an AlN DBC substrate for effective heat dissipation and high-current press-fit pins that double the current-carrying capability per pin. Discrete SiC MOSFETs are available in the industry standard TO-247 and TO-263-7 packages. The SiC products are qualified above and beyond the existing AEC-Q101 and JEDEC product qualification standards. Another option is KGD (known good dies), which gives system manufacturers greater flexibility in building custom SiC power modules. | 01.12.2025 11:30:00 | Dec | news_2025-12-15_12.jpg | \images\news_2025-12-15_12.jpg | https://navitassemi.com/navitas-announces-3300v-and-2300v-uhv-silicon-carbide-product-portfolio-augmenting-reliability-and-performance-in-mission-critical-energy-infrastructure-applications/ | navitassemi.com |
| Snubber for SiC Power Module | Melexis announced the MLX91299, a silicon-based RC... | 12661 | Product Release | Snubber for SiC Power Module | Melexis announced the MLX91299, a silicon-based RC snubber designed to enhance the performance of silicon carbide power modules. It supports automotive and industrial high-voltage power applications and helps engineers mitigate voltage spikes and oscillations to improve system reliability and efficiency. This RC snubber is a silicon-based protective device integrating both a resistor and a capacitor, providing high-voltage transient protection in a compact form. Designed for seamless assembly within high-voltage power modules, it follows standard integration approaches compatible with SiC devices. Its material and form factor enable direct integration with existing power module layouts. With a breakdown voltage of Melexis announced the MLX91299, a silicon-based RC snubber designed to enhance the performance of silicon carbide power modules. It supports automotive and industrial high-voltage power applications and helps engineers mitigate voltage spikes and oscillations to improve system reliability and efficiency. This RC snubber is a silicon-based protective device integrating both a resistor and a capacitor, providing high-voltage transient protection in a compact form. Designed for seamless assembly within high-voltage power modules, it follows standard integration approaches compatible with SiC devices. Its material and form factor enable direct integration with existing power module layouts. With a breakdown voltage of >1,500 V, it is suitable for traction inverters, onboard chargers, DCDC converters, and other high-voltage automotive and industrial applications. 1,500 V, it is suitable for traction inverters, onboard chargers, DCDC converters, and other high-voltage automotive and industrial applications. | 27.11.2025 09:30:00 | Nov | news_2025-12-15_10.png | \images\news_2025-12-15_10.png | https://www.melexis.com/en/news/2025/27nov2025-game-changer-for-sic-power-module | melexis.com |
| 200 V MOSFET switches 480 A | Littelfuse released the MMIX1T500N20X4 X4-Class Ul... | 12662 | Product Release | 200 V MOSFET switches 480 A | Littelfuse released the MMIX1T500N20X4 X4-Class Ultra-Junction Power MOSFET. This 200 V, 480 A N-channel MOSFET features a low on-state resistance of 1.99 mΩ, enabling higher conduction efficiency, simplified thermal management, and improved system reliability in power-dense designs. The device utilizes a ceramic-based, isolated SMPD-X package with topside cooling for improved thermal management, a thermal resistance R<sub>th(j-c)</sub> of 0.14 °C/W and 2500 V isolation. Compared with existing state-of-the-art X4-Class MOSFET solutions, the device is said to offer up to 2× higher current ratings and as much as 63 % lower R<sub>DS(on)</sub>, enabling engineers to consolidate multiple paralleled low-current devices into a single high-current solution. The gate charge Q<sub>g</sub> is specified with 535 nC. Typical applications are DC load switches, battery energy storage systems, industrial and process power supplies, industrial charging infrastructure as well as drones and vertical take-off and landing (VTOL) platforms. | 25.11.2025 10:30:00 | Nov | news_2025-12-15_11.png | \images\news_2025-12-15_11.png | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/littelfuse-expands-x4-class-portfolio-with-200-v-480-a-ultra-junction-mosfet-in-smpd-x-package | littelfuse.com |
| One-Millionth Ideal Switch shipped | Menlo Microsystems has announced the shipment of i... | 12624 | Industry News | One-Millionth Ideal Switch shipped | Menlo Microsystems has announced the shipment of its one-millionth Ideal Switch®. Unlike traditional switching technologies, the Ideal Switch delivers high performance without compromising between size, weight, efficiency, and reliability. This capability allows OEMs to design smaller, lighter, faster, and more energy-efficient systems that can be readily scaled, offering new solutions to tackling the limitations of switching technologies. The key high-growth markets adopting Ideal Switch technology include Test & Measurement (Menlo already supports 14 of the top 20 semiconductor manufacturers), Aerospace & Defense and Power Switching. The adoption of the Ideal Switch across these markets reflects its growing role in addressing system-level bottlenecks caused by the limitations of traditional mechanical and semiconductor-based switches. | 20.11.2025 09:00:00 | Nov | news_2025-12-01_4.jpg | \images\news_2025-12-01_4.jpg | https://menlomicro.com/newsroom/menlo-micro-hits-one-millionth-ideal-switch-shipment-setting-new-standard-for-switch-technology | menlomicro.com |
| Registration is now open for pre-APEC 2026 Workshops | PSMA has opened registration for both the PSMA Cap... | 12623 | Event News | Registration is now open for pre-APEC 2026 Workshops | PSMA has opened registration for both the PSMA Capacitor Workshop and the Power Magnetics @ High Frequency Workshop to be held on Saturday, March 21 in San Antonio, TX prior to the start of APEC 2026. The PSMA Capacitor Workshop returns to APEC after a four year hiatus. The PSMA Capacitor Committee has put together an agenda and is looking to relaunch this workshop series. The PSMA Power Magnetics @ High Frequency Workshop returns for the 11th consecutive year and is looking forward to starting a second decade of delivering valuable information to the community. Both workshops will share a demo/exhibitor area that will also be home for the workshop lunches and networking hour. Space for both workshops is limited. Early bird registration for both workshops runs until January 30th, 2026. | 20.11.2025 08:00:00 | Nov | news_2025-12-01_3.png | \images\news_2025-12-01_3.png | https://psma.com/technical-forums/magnetics/workshop | psma.com |
| Technology and Foundry Partnership for GaN | GlobalFoundries (GF) and Navitas Semiconductor ann... | 12622 | Industry News | Technology and Foundry Partnership for GaN | GlobalFoundries (GF) and Navitas Semiconductor announced a long-term strategic partnership to strengthen and accelerate U.S.-based gallium nitride technology, design and manufacturing. Together, the companies will collaborate, develop and deliver solutions for critical applications in high power markets that demand the highest efficiency and power density, including AI datacenters, performance computing, energy and grid infrastructure and industrial electrification. Through this long-term partnership, GF and Navitas Semiconductor will manufacture next-generation GaN technology at GF’s Burlington, Vermont (USA) facility, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology and Navitas Semiconductor’s GaN technology and device expertise. Development is set for early 2026 with production expected to begin later in the year. By combining GF’s manufacturing capabilities and Navitas’ GaN capabilities, this strategic partnership is expected to "provide customers with the most advanced, secure and scalable GaN solutions". | 20.11.2025 07:00:00 | Nov | news_2025-12-01_2.jpg | \images\news_2025-12-01_2.jpg | https://navitassemi.com/globalfoundries-and-navitas-semiconductor-partner-to-accelerate-u-s-gan-technology-and-manufacturing-for-ai-datacenters-and-critical-power-applications/ | navitassemi.com |
| Gap Filler Gel for Thermal Management | The Chomerics Division of Parker Hannifin Corporat... | 12664 | Product Release | Gap Filler Gel for Thermal Management | The Chomerics Division of Parker Hannifin Corporation introduced THERM-A-GAP™ GEL 120, a one-component, dispensable, thermal interface material with a high thermal conductivity performance. The 12.0 W/m-K thermal conductivity of this product can overcome challenging heat dissipation issues and provide greater design. The special formulation of this gel reduces thermal junction temperatures and conducts heat away from heat-generating electronic components. As a filler material it is suited for use in air gaps of various thicknesses created by assembly and manufacturing tolerances or rough surfaces, from less than 0.5 mm up to 4 mm. Such gaps are common between components or PCBs and heat sinks, metal enclosures and chassis. As a one-component, fully cured material which is suited to operate in temperatures from -50 °C to +200 °C, THERM-A-GAP GEL 120 does not require any secondary curing or additional processes to achieve its specified physical or thermal properties. Its dielectric strength is 5 kVac/mm (ASTM D149 test method), the volume resistivity is 1013 Ωcm (ASTM D257) with a dielectric constant of 5.7 at 1,000 kHz/2 mm thick (ASTM D150); and 0.013 dissipation factor at 1,000 kHz/2 mm thick (Chomerics test method). | 19.11.2025 12:30:00 | Nov | news_2025-12-15_13.jpg | \images\news_2025-12-15_13.jpg | https://ph.parker.com/gb/en/product-list/therm-a-gap-gel-120-thermally-conductive-gel | ph.parker.com |
| Joining Forces for Data Center Power Solutions | Delta and Siemens Smart Infrastructure have formal... | 12625 | Industry News | Joining Forces for Data Center Power Solutions | Delta and Siemens Smart Infrastructure have formalized a global partnership to deliver prefabricated, modular power solutions designed to accelerate the deployment of data center infrastructure, while significantly reducing CAPEX. The partnership is expected to "ensure hyperscale and colocation operators enjoy a strategic advantage in the competitive AI and cloud computing data center market, with the highest performance in power management and reliability". The core of the agreement centers on the delivery of prefabricated, integrated containerized power solutions (SKIDs, eHouses). By prefabricating and pre-testing these modular power systems off-site with an optimized layout, the solution provides a standardized, plug-and-play approach that is said to reduce time-to-market by up to 50 %, to lower construction risk, and to maximize valuable data center square footage. The efficient design can provide up to 20 % CAPEX reduction and up to 27 % lower carbon emissions by using less concrete in the space-optimized layout. | 19.11.2025 10:00:00 | Nov | news_2025-12-01_5.jpg | \images\news_2025-12-01_5.jpg | https://www.delta-emea.com/en-gb/news/delta-and-siemens-to-complement-their-power-solutions-to-help-customers-cut-data-center-deployment-time,-costs,-and-carbon-emissions | delta-emea.com |
| Multi-Purpose R& Dual-Channel Power Supply | Delivering precise DC power up to 3.6 kW, the R&S ... | 12636 | Product Release | Multi-Purpose R& Dual-Channel Power Supply | Delivering precise DC power up to 3.6 kW, the R&S NGT3600 DC power supply series from Rohde & Schwarz (R&S) is a multi-purpose solution for applications across all stages of R&D, quality assurance and production. The dual-channel R&S NGT3622 model, which offers up to 1800 W per channel, is suited for a variety of test and measurement tasks, including power system testing, DC/DC converter evaluation and the simulation of voltage profiles in accordance with test standards. It provides adjustable output voltages of up to 80 V. The two channels of the R&S NGT3622 model can be combined in series or parallel, allowing users to double either the voltage or the current. For applications requiring even more power, up to three units can be connected, delivering up to 480 V or 300 A across six channels. With a resolution of 100 µA for current and 1 mV for voltage, the instruments offer precise measurements needed for a wide range of applications. Thus, it is suited for measurement and testing tasks in various industries, including power electronics, mobile and satellite communications, renewable energies, automotive, aerospace & defense, among others. All models in the R&S NGT3600 DC power supply series are directly rack-mountable – no adapter is required. | 18.11.2025 15:30:00 | Nov | news_2025-12-01_16.jpg | \images\news_2025-12-01_16.jpg | https://www.rohde-schwarz.com/uk/about/news-press/all-news/rohde-schwarz-presents-multi-purpose-r-s-ngt3600-high-precision-dual-channel-power-supply-at-productronica-press-release-detailpage_229356-1593932.html?change_c=true | rohde-schwarz.com |
| 1200 V SiC Six-Pack Power Modules for E-Mobility Propulsion Systems | Wolfspeed announced its 1200 V SiC six-pack power ... | 12628 | Product Release | 1200 V SiC Six-Pack Power Modules for E-Mobility Propulsion Systems | Wolfspeed announced its 1200 V SiC six-pack power modules that "redefine performance benchmarks for high-power inverters". By combining its Gen 4 SiC MOSFET technology and packaging, Wolfspeed’s modules are claimed to "deliver three times more power cycling capability at operating temperature than competing solutions, and 15% higher inverter current capability in an industry-standard footprint". In terms of packaging the new modules incorporate e. g. sintered die attach, epoxy encapsulant material, and copper clip interconnects. The company claims that this enables "3X more power cycles than best-in-class competitor devices in the same footprint". The modules achieve a 22 % R<sub>DS(ON)</sub> improvement at 125 °C compared to the previous generation, while reducing turn-on energy (E<sub>ON</sub>) by approximately 60 % across operating temperatures. Additionally, the soft-body diode is said to enable 30 % lower switching losses and 50 % lower V<sub>DS</sub> overshoot during reverse recovery compared to previous generation. The modules’ industry-standard packaging enables seamless adoption without complex redesign, serving as a direct replacement for IGBT solutions in existing system architectures. This means that there will be no need for power terminal laser welding and complex coldplate mounting while maintaining compatibility with traditional power ecosystems including capacitors, cooling solutions, gate drivers, and current sensors. | 17.11.2025 07:30:00 | Nov | news_2025-12-01_8.png | \images\news_2025-12-01_8.png | https://www.wolfspeed.com/company/news-events/news/wolfspeed-launches-1200v-silicon-carbide-six-pack-power-modules-enabling-a-new-standard-of-performance-for-e-mobility-propulsion-systems/ | wolfspeed.com |
| Test System for Megawatt Charging | Vector has introduced the hardware-in-the-loop (HI... | 12635 | Product Release | Test System for Megawatt Charging | Vector has introduced the hardware-in-the-loop (HIL) test system vCTS.performance, which was developed in collaboration with EA Elektro-Automatik for testing the charging communication between electric vehicles (EV) and supply equipment (EVSE). It meets the demanding power requirements of the Megawatt Charging System (MCS), while also supporting the major charging standards CCS, MCS, NACS, GB/T and CHAdeMO. The system is now available. The vCTS.performance is a comprehensive HIL test system to ensure conformity and interoperability in charging communication between EVs and EVSEs. With scalable DC charging power of up to 3.84 MW in 60 kW increments, the system supports realistic load and endurance testing under real-world conditions. This ensures that both EVs and EVSEs meet the charging communication standards and function reliably. The system operates energy-efficient by implementing regenerative charging with energy feedback to the grid at an efficiency of over 96 %. It is optimized for running the CANoe Test Package EV and EVSE, including integration into the vTESTstudio workflow. | 12.11.2025 14:30:00 | Nov | news_2025-12-01_15.jpg | \images\news_2025-12-01_15.jpg | https://www.vector.com/int/en/products/products-a-z/hardware/vcts-performance/#c398984 | vector.com |
| E-Fuse automotive Smart Switch for Protection, Power Saving and Functional Safety | An addition to the STi2Fuse family, the VNF1248F a... | 12634 | Product Release | E-Fuse automotive Smart Switch for Protection, Power Saving and Functional Safety | An addition to the STi2Fuse family, the VNF1248F automotive e-fuse MOSFET controller from STMicroelectronics reacts within 100 µs, which is faster than a conventional wire fuse and ensures flexible and robust protection to avoid fault propagation inside the vehicle. The VNF1248F integrates the capacitive charging mode (CCM) functionality to ensure proper driving of large capacitive loads with high inrush current. In addition, a Standby-ON mode with current capability up to 600 mA and current consumption lower than 75 µA enhances the vehicle’s efficiency when in park mode. An optional external supply pin for logic reduces power consumption by 0.4 W in 48 V systems and battery-undervoltage shutdown compatible with the automotive LV124 standard ensures system stability. The chip facilitates reaching high safety-integrity levels (ASIL) in ISO 26262 functional-safety applications thanks comprehensive dedicated features like advanced fault detection and reaction, fail-safe mode and limp-home mode. There are also built-in self tests for automatic diagnosis and a dedicated pin for direct hardware control of the external MOSFET gate in case of a microcontroller fault. The VNF1248F is suitable for 12 V, 24 V, and 48 V boardnets. Other uses include as an ECU main switch and active supply for always-on circuitry in parking mode. The associated EV-VNF1248F evaluation board, simplifies integration of the intelligent fuse protection into prototype circuitry. A software package, STSW-EV-VNF1248F, is also available. | 12.11.2025 13:30:00 | Nov | news_2025-12-01_14.jpg | \images\news_2025-12-01_14.jpg | https://community.st.com/t5/developer-news/new-e-fuse-automotive-smart-switch-for-protection-power-saving/ba-p/855500 | st.com |
| 1,200 V Automotive-Grade Low-Loss Diodes | Taiwan Semiconductors introduced a series of autom... | 12618 | Product Release | 1,200 V Automotive-Grade Low-Loss Diodes | Taiwan Semiconductors introduced a series of automotive-grade, low-loss diodes offered in industry-standard packages. The 1,200 V PLA/PLD series, with ratings of 15 A, 30 A or 60 A, all feature maximum forward voltages of 1.3 V, a reverse leakage of less than 10 µA at 25 °C and junction temperatures of up to 175 °C. Available in three popular packages (ThinDPAK, D2PAK-D and TO-247BD), the 1,200V diodes enable easy drop-in replacement to improve efficiency in existing designs. Applications include three-phase AC/DC converters, server and computing power systems, EV charging stations, on-board battery chargers, Vienna rectifiers, totem pole and bridgeless topologies, inverters and UPS systems, and general-purpose rectification in high-power systems of various types. | 12.11.2025 13:30:00 | Nov | news_2025-11-15_15.jpg | \images\news_2025-11-15_15.jpg | https://www.taiwansemi.com/en/1200v-low-loss-diode/ | taiwansemi.com |
| "Innovation Award" & "Young Engineer Award" | The Semikron Danfoss Innovation Award and the Semi... | 12626 | Industry News | "Innovation Award" & "Young Engineer Award" | The Semikron Danfoss Innovation Award and the Semikron Danfoss Young Engineer Award are given for outstanding innovations in projects, prototypes, services or novel concepts in the field of power electronics in Europe, combined with notable societal benefits in form of supporting environmental protection and sustainability by improving energy efficiency and conservation of resources. Both prizes have been initiated by the SEMIKRON Foundation in 2012. The prizes are awarded in cooperation with the European ECPE Network. The deadline for submission ends on 17 January 2026! Please send your proposal resp. your application with the reference ‘Semikron Danfoss Innovation Award’ by email to Thomas Harder, General Manager of ECPE e.V., thomas.harder@ecpe.org. The receipt of your proposal will be confirmed by email in due time. | 11.11.2025 11:00:00 | Nov | news_2025-12-01_6.jpg | \images\news_2025-12-01_6.jpg | https://www.ecpe.org/index.php?eID=dumpFile&t=f&f=48382&token=e0e0cccf0ed984ef54db3627004979b936a33b40 | ecpe.org |
| High Current Four Terminal Shunt Resistors for AI Data Server Power | Stackpole Electronics’ HCSK1216 high current four ... | 12631 | Product Release | High Current Four Terminal Shunt Resistors for AI Data Server Power | Stackpole Electronics’ HCSK1216 high current four terminal shunt resistor is engineered "to deliver exceptional accuracy and efficiency in current sensing applications". The HCSK1216’s four-terminal design separates supply current and voltage sensing paths, minimizing power loss and eliminating lead resistance errors. This all-metal component combines high power handling with ultra-low resistance values, making it suitable for precision current measurement. With a footprint that occupies 75 % less space than traditional 2725-size components, the HCSK1216 is targeted for applications where power density and board space are critical. AI data servers are a prime example of environments that benefit from this advanced solution. Available in 0.3, 0.5, 1, and 2 mΩ resistance values, the HCSK1216 offers tolerances as low as 1 % and a temperature coefficient of resistance (TCR) of 50 ppm. | 11.11.2025 10:30:00 | Nov | news_2025-12-01_11.png | \images\news_2025-12-01_11.png | https://www.seielect.com/catalog/SEI-HCSK.pdf | seielect.com |
| Modular, scalable DC Power System Monitoring and Control | OmniOn Power™ is helping to redefine the rol... | 12627 | Product Release | Modular, scalable DC Power System Monitoring and Control | OmniOn Power™ is helping to redefine the role of the DC power system controller with its next-generation Pulsar 200 platform. Purpose-built for tomorrow’s connected power infrastructure, the controller unifies modular hardware, edge intelligence, and zero-trust security into a cohesive, patent-pending platform. This combination of features helps operators evolve from basic system control to intelligent and adaptive power management. From small remote sites to large centralized facilities, the Pulsar 200 scales across telecom, data center, and industrial applications, helping to The Pulsar 200 controller provides a modular, building-block-style hardware design: Hot-swappable modules connect directly or via CAN bus, allowing upgrades to be performed with negligible disruption to operations. Zero-trust security according to IEC 62443-4-2 and FIPS 140-3 is already built in – complemented by Secure Boot, hardware-backed encryption, EdgeLock® protection, and role-based access control. Dual Gigabit WAN, Wi-Fi, Bluetooth, and optional 4G/5G enable redundancy and secure site access from most locations. An optional integrated remote monitoring aggregates data from HVAC, generators, automatic transfer switches, meters, sensors, and more than 100 supported devices into one unified interface, reducing hardware clutter, service visits, and troubleshooting time. A 5-inch color touchscreen with guided setup, live schematics, and performance dashboards simplifies deployment and ongoing site management. The Pulsar 200 is available in both new system installations and as a retrofit upgrade kit, enabling customers to modernize installed bases of Infinity-M, Infinity-S, and BPS power systems without replacing existing wiring. | 11.11.2025 06:30:00 | Nov | news_2025-12-01_7.png | \images\news_2025-12-01_7.png | https://www.omnionpower.com/about/news/press-releases/omnion-power-provides-modular-scalable-dc-power-system-monitoring-and-control-with-new-pulsar-200-controller | omnionpower.com |
| 1200 V Gen3 SiC MOSFET Modules in SOT-227 | SemiQ has expanded its family of 1200 V Gen3 SiC M... | 12633 | Product Release | 1200 V Gen3 SiC MOSFET Modules in SOT-227 | SemiQ has expanded its family of 1200 V Gen3 SiC MOSFETs, launching five SOT-227 modules that offer R<sub>DS(on)</sub> values of 7.4, 14.5, and 34 mΩ. SemiQ’s GCMS modules, which feature Schottky Barrier Diodes (SBDs), are claimed to have "lower switching losses at high temperature, especially compared to non-SBDs GCMX modules". The devices target medium-voltage, high-power conversion applications, including battery chargers, photovoltaic inverters, server power supplies, and energy storage systems. All parts are screened using wafer-level gate-oxide burn-in tests exceeding 1400 V and are avalanche tested to 800 mJ (330 mJ for 34 mΩ modules). All modules feature an isolated backplate as well as direct mounts for a heat sink. The 7.4 mΩ GCMX007C120S1-E1 reduces switching losses to 4.66 mJ (3.72 mJ Turn on, 0.94 mJ Turn off) and has a body diode reverse recovery charge of 593 nC. Their junction-to-case thermal resistance ranges from 0.23°C/W for the 7.4 mΩ MOSFET module to 0.70 °C/W for the 34 mΩ MOSFET module. | 10.11.2025 12:30:00 | Nov | news_2025-12-01_13.jpg | \images\news_2025-12-01_13.jpg | https://semiq.com/semiq-expands-1200-v-gen3-sic-mosfet-line-with-launch-of-7-4-14-5-and-34-m%cf%89-sot-227-modules/ | semiq.com |
| GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio | GlobalFoundries (GF) announced that it has entered... | 12605 | Industry News | GaN Technology Licensed to Accelerate U.S.-Manufactured Power Portfolio | GlobalFoundries (GF) announced that it has entered into a technology licensing agreement with TSMC for 650V and 80V Gallium Nitride (GaN) technology. This strategic move will accelerate GF’s next generation of GaN products for datacenter, industrial and automotive power applications and provide U.S.-based GaN capacity for a global customer base. As traditional silicon CMOS technologies hit their performance limits, GaN is emerging as the next-generation solution for meeting the increasing demand for higher efficiency, power density and compactness in power systems. GF is developing a comprehensive GaN portfolio, including high-performance 650V and 80V technologies aimed at enabling electric vehicles, datacenters, renewable energy systems and fast-charging electronics. GF’s GaN solutions are designed for harsh environments, with a holistic approach to GaN reliability that spans process development, device performance and application integration. GF will qualify the licensed GaN technology at its manufacturing facility in Burlington, Vermont, leveraging the site’s expertise in high-voltage GaN-on-Silicon technology to accelerate volume production for customers seeking next-generation power devices. Development is set for early 2026, with production to begin later in the year. | 10.11.2025 07:00:00 | Nov | news_2025-11-15_2.jpg | \images\news_2025-11-15_2.jpg | https://gf.com/gf-press-release/globalfoundries-licenses-gan-technology-from-tsmc-to-accelerate-u-s-manufactured-power-portfolio-for-datacenter-industrial-and-automotive-custo/ | gf.com |
| EPCIA President appointed | According to Murata Manufacturing, Christophe Pott... | 12608 | People | EPCIA President appointed | According to Murata Manufacturing, Christophe Pottier, Vice President of Sales for Murata Europe, has been appointed as President of the European Passive Components Industry Association (EPCIA), effective immediately. Mr. Pottier brings over three decades of deep experience within the electronics industry to his new role, with a strong focus on strategic sales and automotive sector initiatives. His experience at Murata, where he has contributed across multiple domains, including strategic sales in telecom and collaborative initiatives in the automotive industry, has shaped his understanding of how these components quietly power advanced technologies. As EPCIA President, Mr. Pottier’s mission is to promote a stronger, more connected passive components ecosystem across Europe by focusing on three key areas. The first area is elevating the role of passive components as these elements regulate, protect, and optimize electronic signals, making them indispensable to chip performance and system reliability. The second focal point is fostering collaboration which means working with adjacent industries to meet demands for miniaturization, high-speed data, and energy efficiency as integration into semiconductor packaging accelerates. Strengthening ties with research institutes is the third key area: Driving innovation in materials science, sustainability, and advanced manufacturing through partnerships with Europe’s academic and research institutions. | 07.11.2025 10:00:00 | Nov | news_2025-11-15_5.jpg | \images\news_2025-11-15_5.jpg | https://www.murata.com/en-eu/news/other/other/2025/1107 | murata.com |
| Job Promotion in Solutions for Power Electronics | Indium Corporation has promoted Joseph Hertline to... | 12610 | People | Job Promotion in Solutions for Power Electronics | Indium Corporation has promoted Joseph Hertline to Senior Product Manager, Engineered Solder Materials (ESM). In his new role, as Senior Product Manager, Hertline is now responsible for driving the growth of Indium Corporation’s global ESM initiatives through the development of marketing strategies. He will continue to lead the company’s efforts in the power electronics application segment with a broader scope of products, applications, and customer segments. He will also continue to lead ESM Application Engineering efforts for all ESM product lines. Hertline has more than a decade of experience in engineering and product management within the electronics industry and joined Indium Corporation in 2020 as Product Manager, Power Electronics. | 06.11.2025 12:00:00 | Nov | news_2025-11-15_7.jpg | \images\news_2025-11-15_7.jpg | https://www.indium.com/press-releases/indium-corporation-promotion-reflects-hertlines-leadership-in-advancing-innovative-soldering-solutions-for-power-electronics/ | indium.com |
| MicroModule Series expanded | The MagI³C-VDMM power module product family f... | 12616 | Product Release | MicroModule Series expanded | The MagI³C-VDMM power module product family from Würth Elektronik continues to grow: The three variable step-down MicroModules for input voltages from 2.5 V to 5.5 V and adjustable output voltages from 0.6 V to 4 V are available in pin-compatible 1 A, 2 A, and 3 A versions. The modules achieve a peak efficiency of up to 96 %. With a quiescent current of 4 µA,they are also suitable for battery-powered applications. MagI³C-VDMM power modules represent a fully integrated DC/DC power supply that includes a switching regulator with integrated MOSFETs, as well as a controller, compensation, and a shielded inductor – all in a single package. The modules, which can replace linear regulators, are equipped with integrated protection circuits. They protect against thermal overload and electrical damage caused by overcurrent, short circuit and undervoltage. Depending on the load, they automatically switch between pulse frequency modulation (PFM) and pulse width modulation (PWM) modes. These mode transitions allows optimal efficiency and output voltage ripple at all load currents. To save energy, the power module can be set to resting mode using an additional pin. Together, the Power-GOOD and EN functions also enable power sequencing. These MagI³C-VDMM power modules measure 3.5 x 3.5 x 1.5 mm³ in an LGA-9 package. The devices are suitable for point-of-load DC/DC applications, industrial and medical equipment, test and measurement devices, for powering DSPs, FPGAs, MCUs and MPUs as well as I/O interfaces. In the operating temperature range from -40 °C to 105 °C the modules comply with EN55032 (CISPR-32) Class B for radiated emissions. | 06.11.2025 11:30:00 | Nov | news_2025-11-15_13.jpg | \images\news_2025-11-15_13.jpg | https://www.we-online.com/en/news-center/press?instance_ID=5506&d=expansion-magi3c-vdmm | we-online.com |
| High-Current 3×3 mm² Inductors | Coilcraft’s KTA3030 Series molded power inductors ... | 12632 | Product Release | High-Current 3×3 mm² Inductors | Coilcraft’s KTA3030 Series molded power inductors offer specifically low inductance values starting from 40 nH, making them well-suited for today’s low-voltage, high-current DC/DC converters. Designed for single-phase and multiphase VRMs and PoL regulators, the KTA3030 delivers fast transient response, high current handling, and low DC as well as AC losses in a compact package. The AEC-200 qualified and RoHS-compliant series may be used with CPUs, GPUs, ASICs, and SoCs in servers, data centers, as well as automotive power applications. The package measures 3.2 × 3.0 × 3.2 mm³. | 05.11.2025 11:30:00 | Nov | news_2025-12-01_12.jpg | \images\news_2025-12-01_12.jpg | https://www.coilcraft.com/en-us/products/power/shielded-inductors/molded-inductor/kta/kta3030/ | coilcraft.com |
| Reference Design combines Power, Sensing, and Control for Robot Joints and UAVs – fitting in A1 Robot Motor | Efficient Power Conversion Corporation (EPC) launc... | 12614 | Product Release | Reference Design combines Power, Sensing, and Control for Robot Joints and UAVs – fitting in A1 Robot Motor | Efficient Power Conversion Corporation (EPC) launched the EPC91120, a 3-phase brushless DC (BLDC) motor drive inverter optimized for humanoid robot joints. "Featuring EPC’s EPC23102 ePower™ Stage IC, the EPC91120 delivers superior efficiency, high power density, and precise motion control in a compact 32 mm-diameter footprint designed to integrate directly within robotic motor assemblies", the company reports. The EPC91120 evaluation board integrates three EPC23102 GaN monolithic half-bridge ICs with an on-board microcontroller, current and voltage sensing, magnetic encoder interface, and RS485 communication. The system operates from 15 V to 55 V<sub>DC</sub>, delivering up to 21 A peak (15 A<sub>RMS</sub>) continuous current and 42 A peak (30 A<sub>RMS</sub>) pulsed. With a 100 kHz PWM switching frequency and only 50 ns dead time, the EPC91120 achieves exceptional efficiency and dynamic performance, ideal for humanoid robot joint motors and other high-precision motion applications. The board was specifically designed to fit the mechanical dimensions of the Unitree A1 robot motor, enabling direct evaluation in real-world robotic systems. Under natural convection cooling at 26 °C ambient, the EPC91120 delivers 7 ARMS per phase without a heatsink and up to 15 A<sub>RMS</sub> when integrated into the humanoid joint motor casing as a heatsink. Experimental results demonstrate total system efficiencies exceeding 80 % from DC input to mechanical output, validating the design for high-torque, low-weight robotic joints. | 05.11.2025 09:30:00 | Nov | news_2025-11-15_11.jpg | \images\news_2025-11-15_11.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3247/epc%e2%80%99s-gan-power-ics-enable-a-new-era-of-robotic-agility | epc-co.com |
| MOSFET for AI Servers in 5 × 6 mm² Package | ROHM has developed the 100 V power MOSFET - RS7P20... | 12629 | Product Release | MOSFET for AI Servers in 5 × 6 mm² Package | ROHM has developed the 100 V power MOSFET - RS7P200BM, which is claimed to achieve "industry-leading SOA in a 5060-size (5.0 mm × 6.0 mm) package". This product is well-suited for hot-swap circuits in AI servers using 48 V power supplies as well as for industrial power supplies requiring battery protection. The device achieves an on-resistance of 4.0 mΩ (conditions: V<sub>GS</sub> = 10 V, I<sub>D</sub> = 50 A, T<sub>a</sub> = 25 °C) while maintaining a SOA of 7.5 A at a pulse width of 10 ms and 25 A at 1 ms under operating conditions of V<sub>DS</sub> = 48 V. This balance of low on-resistance and wide SOA, typically a trade-off relationship, helps suppress heat generation during operation, thereby improving server power supply efficiency, reducing cooling load, and lowering electricity costs. Typical applications are 48 V system AI servers and data center power hot-swap circuits, 48 V system industrial power supplies (forklifts, power tools, robots, fan motors, etc.), battery-powered industrial equipment such as AGVs (Automated Guided Vehicles) and UPS, emergency power systems (battery backup units). | 05.11.2025 08:30:00 | Nov | news_2025-12-01_9.jpg | \images\news_2025-12-01_9.jpg | https://www.rohm.com/news-detail?news-title=2025-11-25_news_mosfet&defaultGroupId=false | rohm.com |
| Win a Power Analyzer Set for your Research Lab | Just in time for Christmas, HIOKI EUROPE GmbH is g... | 12604 | Industry News | Win a Power Analyzer Set for your Research Lab | Just in time for Christmas, HIOKI EUROPE GmbH is giving away a complete Power Analyzer Set with a retail value of around EUR 35,000 consisting of ex-demo devices. This special giveaway campaign is open exclusively to universities and research institutions across the European Union specialising in power electronics or energy efficiency. Are these your areas of expertise? Join the competition at shop.hioki.eu/win-PW6001-Power-Analyzer by briefly describing how you would use power analysis in your application – the most convincing idea wins! Among all participants, the HIOKI jury will award a Power Analyzer Set*. With a bit of luck, you could find this special present under your institution’s Christmas tree this year. Deadline for entries: 19 December 2025. | 31.10.2025 06:00:00 | Oct | news_2025-11-15_1.jpg | \images\news_2025-11-15_1.jpg | https://shop.hioki.eu/win-PW6001-Power-Analyzer | hioki.eu/win |
| Vertical GaN Semiconductors | As global energy demand surges from AI data center... | 12621 | Product Release | Vertical GaN Semiconductors | As global energy demand surges from AI data centers, electric vehicles, and other energy intensive applications, onsemi has introduced vertical gallium nitride (vGaN) power semiconductors, setting a new benchmark for power density, efficiency and ruggedness for these applications. These next-generation GaN-on-GaN power semiconductors conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security. onsemi’s vGaN technology is designed to handle high voltages in a monolithic die – 1,200 volts and beyond – switching high currents at high frequency with superior efficiency. High end power systems built with this technology can reduce losses by almost 50% and by operating at higher frequencies can also reduce the size, including passives like capacitors and inductors by a similar amount. Additionally, compared to commercially available lateral GaN, vGaN devices are approximately three times smaller. This makes onsemi’s vGaN ideal for critical high-power applications where power density, thermal performance and reliability are paramount. | 30.10.2025 16:30:00 | Oct | news_2025-11-15_18.jpg | \images\news_2025-11-15_18.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-unveils-vertical-gan-semiconductors-a-breakthrough-for-ai-and-electrification | onsemi.com |
| N-Channel Power MOSFETs | Toshiba Electronics Europe launches six products f... | 12620 | Product Release | N-Channel Power MOSFETs | Toshiba Electronics Europe launches six products featuring the DTMOSVI 600V series of N-channel power MOSFET chips, mounted in a 4-pin TO-247-4L(X) package. These TKxxxZ60Z1 devices are designed to significantly reduce switching loss. They are suitable for a range of applications, including servers in data centres, SMPS for industrial equipment, and power conditioners for photovoltaic generators. The DTMOSVI 600V series, featured in these products, has been engineered with an optimised gate design and process. This optimisation has resulted in a reduction of the drain-source on-resistance per unit area by approximately 13 %. Furthermore, the crucial figure of merit (FOM) for MOSFET performance, R<sub>DS(ON)</sub> × gate-drain charge (Q<sub>gd</sub>), has been reduced by approximately 52 % compared to Toshiba’s previous generation DTMOSIV-H series products with the same 600 V drain-source voltage (V<sub>DS</sub>) ratings. For example, the TK024Z60Z1 has a typical R<sub>DS(ON)</sub> of 20 mΩ and Q<sub>gd</sub> of 37 nC. This translates into a better trade-off between conduction loss and switching loss, directly contributing to the efficiency of switched-mode power supplies. These products incorporate a four-pin TO-247-4L(X) package, which includes a dedicated signal source terminal for the gate drive. However, it is important to note that the TO-247-4L(X) package has a different appearance and dimensions compared to Toshiba’s existing four-pin TO-247-4L package, as it features the cavity between the drain and source pins to increase creepage distance. | 30.10.2025 15:30:00 | Oct | news_2025-11-15_17.jpg | \images\news_2025-11-15_17.jpg | https://toshiba.semicon-storage.com/eu/company/news/2025/10/mosfet-20251030-1.html | toshiba.semicon-storage.com |
| APEC 2026 Early Bird Registration Now Open | The registration for APEC 2026, which will take in... | 12591 | Event News | APEC 2026 Early Bird Registration Now Open | The registration for APEC 2026, which will take in San Antonio, Texas (USA) on March 22-26, 2026, is now open. The IEEE Applied Power Electronics Conference and Exposition (APEC) offers a wide range of educational and social activities. APEC attendees can choose the registration category that best fits their needs and interests. Early bird registration will close on January 26, 2026. | 30.10.2025 13:00:00 | Oct | news_2025-11-01_8.jpg | \images\news_2025-11-01_8.jpg | https://apec-conf.org/attendees/registration/ | apec-conf.org |
| 650 V Super Junction TOLL Package Products with Integrated Kelvin Source | Magnachip Semiconductor released two 650 V Super J... | 12615 | Product Release | 650 V Super Junction TOLL Package Products with Integrated Kelvin Source | Magnachip Semiconductor released two 650 V Super Junction MOSFET (SJ MOSFET) products, adopting the TO-Leadless (TOLL) package, that are designed to meet the high-power and high-current requirements of premium consumer electronics such as premium TVs, gaming monitors, AI laptop adaptors and chargers. Current Magnachip products with TOLL packaging, such as the 80 V – 200 V eXtreme Trench MOSFETs, use a 3-pin configuration. The 650 V SJ MOSFETs have a 4-pin Kelvin configuration, which minimizes the effects of parasitic inductance on the gate-source return path, thereby improving switching stability and overall power efficiency by reducing gate oscillation (ringing). Compared to a conventional D²PAK package, the 4-pin TOLL package delivers more than a 100 % increase in current capability, a 24 % reduction in footprint and a 48 % reduction in height. Therefore, the 4-pin TOLL package is suitable for smaller PCB and high-power density applications, which demand high power efficiency and effective heat dissipation performance. For example, the MMTB65R099RFRH device suited for a drain-source voltage of 650 V operates with a maximum R<sub>DS(on)</sub> of 99 mΩ. | 30.10.2025 10:30:00 | Oct | news_2025-11-15_12.jpg | \images\news_2025-11-15_12.jpg | https://www.magnachip.com/magnachip-launches-650v-super-junction-toll-package-products-with-integrated-kelvin-source/ | magnachip.com |
| Vertical GaN Architecture built on GaN-on-GaN Technology | onsemi has introduced vertical gallium nitride (vG... | 12584 | Industry News | Vertical GaN Architecture built on GaN-on-GaN Technology | onsemi has introduced vertical gallium nitride (vGaN) power semiconductors. These next-generation GaN-on-GaN devices conduct current vertically through the compound semiconductor, enabling higher operating voltages and faster switching frequencies, leading to energy savings to deliver smaller and lighter systems across AI data centers, electric vehicles (EVs), renewable energy, and aerospace, defence and security. Developed and manufactured at onsemi’s fab in Syracuse, NY, onsemi holds over 130 global patents covering a range of fundamental process, device design, manufacturing and systems innovations for vertical GaN technology. onsemi’s vGaN technology is designed to handle high voltages in a monolithic die – 1,200 volts and beyond – switching high currents at high frequency with superior efficiency. High end power systems built with this technology can reduce losses by almost 50% and by operating at higher frequencies can also reduce the size, including passives like capacitors and inductors by a similar amount. Additionally, compared to commercially available lateral GaN, vGaN devices are approximately three times smaller. This makes onsemi’s vGaN ideal for critical high-power applications where power density, thermal performance and reliability are paramount. | 30.10.2025 06:00:00 | Oct | news_2025-11-01_1.jpg | \images\news_2025-11-01_1.jpg | https://www.onsemi.com/company/news-media/press-announcements/en/onsemi-unveils-vertical-gan-semiconductors-a-breakthrough-for-ai-and-electrification | onsemi.com |
| Company Acquisition | Littlefuse announced a definitive agreement to acq... | 12607 | Industry News | Company Acquisition | Littlefuse announced a definitive agreement to acquire Basler Electric Company for a cash consideration of approximately $350M, subject to customary adjustments. Basler is a designer and manufacturer of electrical control and protection solutions for industrial markets including grid and utility infrastructure, power generation and data center. With three manufacturing facilities in Highland, IL/USA, Taylor, TX/USA and Piedras Negras, Mexico, Basler’s technologies regulate and protect mission-critical equipment. | 28.10.2025 09:00:00 | Oct | news_2025-11-15_4.png | \images\news_2025-11-15_4.png | https://investor.littelfuse.com/news/news-details/2025/Littelfuse-to-Acquire-Basler-Electric-Enhancing-High-Growth-Industrial-Market-Positioning/default.aspx | littelfuse.com |
| Reed Relais switches up to 80 W | Pickering Electronics has upgraded its Series 144 ... | 12613 | Product Release | Reed Relais switches up to 80 W | Pickering Electronics has upgraded its Series 144 high power reed relays switching up to 80 W while stacking on a 0.25-inch pitch to include a new variant with an electrostatic shield between the switch and the coil to help minimize noise. Electrostatic screening protects against noise that can otherwise occur between the coil drive and high voltage circuits. This new screening option is in addition to Pickering’s internal mu-metal screen, which helps eliminate problems that would otherwise be experienced due to magnetic interaction when devices are closely stacked. Miniature, ultra-high packing density reed relays usually have a switching rating of up to 10 W and 0.5 A, but some applications demand higher switching power and higher carry current specifications. Suitable applications for the Series 144 include mixed signal semiconductor testers, photovoltaic and EV charging, mining gas analysis, medical electronics, in-circuit test equipment, and high voltage instrumentation. As dry reed relays, Series 144 offers an eco-friendlier option than mercury-wetted reed relays. For many applications, it also provides a superior alternative to electromechanical relays (EMRs), where its low-level performance and high isolation significantly improve efficiency and reliability. And compared to EMRs, reed relays deliver faster switching speeds and longer mechanical lifespans. 1 Form A, 2 Form A and 1 Form B configurations are available, with 5 V, 12 V or 24 V coils offered, all with optional internal diode protection. Additional build options are also available on request, including many pin configurations. | 28.10.2025 08:30:00 | Oct | news_2025-11-15_10.png | \images\news_2025-11-15_10.png | https://www.pickeringrelay.com/eliminate-noise-in-dense-high-power-designs-with-pickerings-new-electrostatic-shielding/ | pickeringrelay.com |
| Report: Graphene in electronic Applications | Graphene was initially celebrated as a sci-fi mate... | 12609 | Industry News | Report: Graphene in electronic Applications | Graphene was initially celebrated as a sci-fi material destined to transform electronics, quantum devices, and futuristic sensors. While expectations soared, commercial reality proved more modest. Rather than enabling transparent phones or levitating trains, graphene first succeeded in practical roles such as enhancing polymer composites in tires, coatings, and sporting goods through improved strength and conductivity. Now, with advances in manufacturing and renewed interest from major electronics and energy companies, the question resurfaces: are we finally approaching the breakthrough era once promised? IDTechEx has now released a report, dubbed "Graphene & 2D Materials 2026-2036: Technologies, Markets, Players", which includes granular 10-year graphene market forecasts, based on profiles of 90+ key players and leverages extensive coverage of many end-use markets for graphene. Graphene is increasingly used in consumer electronics for thermal management, leveraging its exceptional heat conductivity to improve device cooling and reliability. Beyond passive materials, its high surface area and conductivity also make it a strong candidate for energy storage applications, particularly in next-generation batteries and supercapacitors, where faster charging and longer lifetimes are sought. IDTechEx believes that thermal management applications is a key early area for graphene adoption. There is increasing demand for high-performance heat spreaders, and the graphene properties and morphology are well-suited. The thermal conductivity of carbon materials tend to be higher than that seen in metals, with graphene oxide (GO) reporting a thermal conductivity in excess of 3,000 W/m·K. | 27.10.2025 11:00:00 | Oct | news_2025-11-15_6.png | \images\news_2025-11-15_6.png | https://www.idtechex.com/en/research-report/graphene-and-2d-materials/1121 | idtechex.com |
| Ruggedized 6 W DC/DC Converters with 8:1 Inputs | The TEC 6UI series from TRACO power comprises isol... | 12617 | Product Release | Ruggedized 6 W DC/DC Converters with 8:1 Inputs | The TEC 6UI series from TRACO power comprises isolated DC/DC converters featuring an 8:1 input range. These converters are engineered to seamlessly replace and serve as an alternative to existing 2:1 and 4:1 input converter series. With an input voltage range of 9 to 75 V<sub>DC</sub>, the TEC 6UI supports a broad spectrum of standard bus voltages, reducing the need for multiple model variants within a single application. Each model includes built-in protection such as short circuit protection, overcurrent limitation, undervoltage lockout, and remote-control functionality. The converters are certified for an operating temperature range of -40 °C to +80 °C in accordance with IEC/EN/UL 62368-1 and are capable of functioning at altitudes up to 5000 m. Housed in a SIP-8 plastic case, the TEC 6UI series is well-suited for space-constrained applications. Available in both single and dual output configurations with an I/O isolation of 1600 V<sub>DC</sub>, these converters are suited for a wide range of industrial applications. | 24.10.2025 12:30:00 | Oct | news_2025-11-15_14.jpg | \images\news_2025-11-15_14.jpg | https://www.tracopower.com/de/deu/tec6ui | tracopower.com |
| Radiation-hardened Buck Controller with integrated Gate Drive | Infineon Technologies announced "the industry’s fi... | 12630 | Product Release | Radiation-hardened Buck Controller with integrated Gate Drive | Infineon Technologies announced "the industry’s first radiation-hardened (rad-hard) buck controller with an integrated gate drive". Designed for Point of Load (PoL) power rails in commercial space systems and other extreme environments, the device is particularly well-suited for distributed satellite power systems and digital processing payloads, including FPGA and ASIC systems. The RIC70847 integrates a radiation hardened 17.1 V buck controller with a 5 V (output) half-bridge gate drive and is targeted for applications with a power input range of 4.75 V to 15 V and power output range of 0.6 V to 5.25 V. It is designed to work seamlessly with logic-level transistors, such as Infineon’s rad-hard R8 power FET. The device meets the MIL spec temperature range from -55 °C to 125 °C as well as the stringent requirements of applications that demand a Total Ionizing Dose (TID) rating of up to 100 krad (Si) and Single Event Effects (SEE) characterized up to a Linear Energy Transfer (LET) of 81.9 MeV·cm²/mg. | 21.10.2025 09:30:00 | Oct | news_2025-12-01_10.jpg | \images\news_2025-12-01_10.jpg | https://www.infineon.com/market-news/2025/INFPSS202510-012 | infineon.com |
| 10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics | Allegro MicroSystems introduced "the industry’s fi... | 12595 | Product Release | 10 MHz TMR Current Sensor for Protection and Control of Wide Bandgap Power Electronics | Allegro MicroSystems introduced "the industry’s first commercially available magnetic current sensor to achieve 10 MHz bandwidth featuring Allegro’s advanced XtremeSense™ TMR (tunneling magnetoresistance) technology". The ACS37100 TMR current sensor helps power system designers master the control signal chain and unlock the full potential of fast-switching GaN and SiC FETs. Tailored to the needs of electric vehicles (xEVs), clean energy power conversion systems, and AI data center power supplies, the automotive grade ACS37100 achieves a 50 ns response time, providing the high-fidelity data needed for optimal efficiency and protection in demanding high-frequency applications. At sub-megahertz frequencies, conventional magnetic current sensors lack the speed and precision to provide the high-fidelity, real-time data required for stable control and protection loops. This can leave advanced systems vulnerable to damage and may prevent them from operating at their full potential. The ACS37100 is engineered to solve this control challenge. The device delivers a noise of 26 mA<sub>RMS</sub> across the full 10 MHz bandwidth. Integrated reinforced isolation is 5 kV for 60 seconds per UL 62368-1 while the internal conductor resistance is specified with 1.2 mΩ. | 21.10.2025 07:30:00 | Oct | news_2025-11-01_12.png | \images\news_2025-11-01_12.png | https://www.allegromicro.com/en/about-allegro/newsroom/press-releases/2025/industrys-first-production-ready-10-mhz-tmr-current-sensor | allegromicro.com |
| Bosch Global Supplier Award | Isabellenhütte has received a Bosch Global Supplie... | 12593 | Industry News | Bosch Global Supplier Award | Isabellenhütte has received a Bosch Global Supplier Award and thus ranks globally among the best suppliers of Bosch, the supplier of technology and services. Isabellenhütte received the award in the category "Materials and components". From its roughly 35,000 suppliers, Bosch singled out 49 suppliers from 14 countries for an award. This is the 19th time that the Bosch Group has rewarded outstanding performance by its suppliers – notably as concerns quality, costs, sustainability, and innovation. "This special award recognizes Isabellenhütte as an important development partner for Bosch and is a great tribute to all employees who work daily to continuously improve our processes and the quality of our products. We will continue to focus our strategic orientation on customer orientation and innovation as well as absolute reliability and competitiveness," emphasizes Thilo Gleisberg, CTO at Isabellenhütte. | 17.10.2025 15:00:00 | Oct | news_2025-11-01_10.jpg | \images\news_2025-11-01_10.jpg | https://www.isabellenhuette.com/news/bosch-global-supplier-award-2025 | isabellenhuette.com |
| Reflow-suitable Package for SiC Devices in High-Power Applications | High-power applications such as electric vehicle c... | 12612 | Product Release | Reflow-suitable Package for SiC Devices in High-Power Applications | High-power applications such as electric vehicle charging, battery energy storage systems, and commercial, construction and agricultural vehicles (CAVs) are driving the demand for higher system-level power density and efficiency to meet increasing performance expectations. At the same time, these requirements introduce new design challenges, including reliable operation under harsh environmental conditions, robustness against transient overloads, and optimized overall system performance. To address these challenges, Infineon Technologies has launched the CoolSiC™ MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package. The devices support higher DC-link voltages and enable improved thermal performance, reduced system size and enhanced reliability. The package technology supports reflow soldering at 260 °C for up to three cycles and enables reliable operation with junction temperatures up to 200 °C. This 1400 V voltage class provides additional margin for faster switching and simplifies protection measures against overvoltage. This eliminates the need for power derating and contributes to overall system robustness. The CoolSiC MOSFETs 1400 V G2 in the TO-247PLUS-4 Reflow package are available in R<sub>DS(on)</sub> classes from 6 to 29 mΩ and suitable for applications where high power density is crucial. Infineon also offers CoolSiC MOSFETs 1400 V in a TO-247-4 package with high creepage. R<sub>DS(on)</sub> classes for this portfolio range from 11 to 38 mΩ. | 17.10.2025 07:30:00 | Oct | news_2025-11-15_9.jpg | \images\news_2025-11-15_9.jpg | https://www.infineon.com/market-news/2025/INFGIP202510-010 | infineon.com |
| Common Mode Choke for Power Line Noise Attenuation | Bourns released its Model SRF1709 Common Mode Chok... | 12619 | Product Release | Common Mode Choke for Power Line Noise Attenuation | Bourns released its Model SRF1709 Common Mode Choke, featuring a ferrite toroid core for low radiation making it an effective power line noise attenuation solution. This choke provides an inductance of 3.5 mH with a current rating of 2.5 A and an operating temperature range from –40 °C to +85 °C. It is designed to provide effective EMI suppression from both incoming and outgoing paths within the system, making suitable for consumer, industrial and other electronic application designs. | 15.10.2025 14:30:00 | Oct | news_2025-11-15_16.jpg | \images\news_2025-11-15_16.jpg | https://www.bourns.com/news/press-releases/pr/2025/10/15/bourns-releases-high-inductance-common-mode-choke-as-effective-power-line-noise-attenuation-solution | bourns.com |
| Long-term Contract for green Electricity Supply | Infineon Technologies has concluded Power Purchase... | 12588 | Industry News | Long-term Contract for green Electricity Supply | Infineon Technologies has concluded Power Purchase Agreements (PPA) with PNE and Statkraft for green electricity. Over the next ten years, Infineon will purchase green electricity from PNE AG’s Schlenzer and Kittlitz III wind farms in Brandenburg in Germany to supply its sites in Dresden, Regensburg, Warstein and Neubiberg near Munich. Seven turbines in the PNE AG wind farms offer a total capacity of 24 MW and a contracted electricity volume of 550 GWh. Statkraft will additionally supply German locations with renewable electricity from solar parks in Spain with a total volume of 220 GWh over the next five years. Infineon aims to switch its global operations to 100 % green electricity this year and become CO<sub>2</sub>-neutral for Scope 1 and 2 emissions by 2030. Infineon has been using green electricity in Germany and Europe since the 2021 fiscal year. By concluding Power Purchase Agreements for specific wind and solar power plants in Brandenburg and Spain, the company is now securing its long-term green electricity requirements and supporting the expansion of renewable energies. | 15.10.2025 10:00:00 | Oct | news_2025-11-01_5.jpg | \images\news_2025-11-01_5.jpg | https://www.infineon.com/press-release/2025/INFXX202510-006 | infineon.com |
| 100 V automotive-qualified Transistors | Infineon launched the CoolGaN™ automotive tr... | 12597 | Product Release | 100 V automotive-qualified Transistors | Infineon launched the CoolGaN™ automotive transistor 100 V G1 family for production and has started supplying samples of its pre-production product range qualified for automotive applications in accordance with AEC-Q101, including high-voltage (HV) CoolGaN automotive transistors and bidirectional switches. Particularly with the shift from 12 V to 48 V systems in software-defined vehicles, GaN- based power conversion systems allow for improved performance but also enable advanced features such as steer-by-wire and real-time chassis control, improving ride comfort and handling. Infineon’s family of 100 V CoolGaN transistors can be used for applications such as zone control & main DC/DC converters, high-performance auxiliary systems, and Class D Audio amplifiers. | 15.10.2025 09:30:00 | Oct | news_2025-11-01_14.jpg | \images\news_2025-11-01_14.jpg | https://www.infineon.com/market-news/2025/INFPSS202510-007 | infineon.com |
| Vertical GaN Sample Prototypes – already in 2025! | Vertical Semiconductor (Vertical), a semiconductor... | 12606 | Industry News | Vertical GaN Sample Prototypes – already in 2025! | Vertical Semiconductor (Vertical), a semiconductor company spun out of the Massachusetts Institute of Technology (MIT), received $11 million in seed funding led by Playground Global to help accelerate development of vertical GaN transistors. Additional investors include JIMCO Technology Fund, milemark•capital, and Shin-Etsu Chemical. The company’s technology is said to reduce energy loss, cut heat, and simplify infrastructure, improving efficiency by up to 30% and enabling a 50% smaller power footprint in AI data center racks. Vertical Semiconductor has demonstrated its vertical GaN technology on 8-inch wafers using standard silicon CMOS semiconductor manufacturing methods, enabling seamless integration with existing process technology and making it ready for real-world deployment for devices from 100 V to 1.2 kV. With a prototype in development and commercial milestones ahead, the company plans to start early sampling for its first prototype packaged devices by the end of the year and a fully integrated solution in 2026. | 15.10.2025 08:00:00 | Oct | news_2025-11-15_3.png | \images\news_2025-11-15_3.png | https://www.verticalsemi.com/news/vertical-semiconductor-raises-11-million-to-deliver-the-next-wave-of-power-for-ai-chips-and-data-centers | verticalsemi.com |
| Digital Power Joint Lab | GigaDevice has launched a Digital Power Joint Lab ... | 12585 | Industry News | Digital Power Joint Lab | GigaDevice has launched a Digital Power Joint Lab in collaboration with Navitas Semiconductor. By combining GigaDevice’s GD32MCU expertise with Navitas’ advantages in high-frequency, high-speed, and highly integrated GaN technologies, and its GeneSiC™ technology leveraging ‘trench-assisted planar’ technology, the collaboration aims to deliver intelligent and high-efficiency digital power solutions for emerging markets such as AI data centers, photovoltaic inverters, energy storage systems, charging infrastructure, and electric vehicles. Before its official launch, the lab achieved several important technological milestones, including 4.5 kW and 12 kW server power supply solutions and a 500 W single-stage PV micro-inverter. The lab will focus on developing comprehensive system-level reference designs and application-specific solutions to enable smarter, greener, and more energy-efficient power systems across data centers, renewable energy, and electric mobility. | 15.10.2025 07:00:00 | Oct | news_2025-11-01_2.jpg | \images\news_2025-11-01_2.jpg | https://www.gigadevice.com/about/news-and-event/news/gigadevice-and-navitas-unveil-digital-power-joint-lab | gigadevice.com |
| Gate Driver simplifies SiC and IGBT Designs | Littelfuse released the IX4352NEAU automotive-qual... | 12598 | Product Release | Gate Driver simplifies SiC and IGBT Designs | Littelfuse released the IX4352NEAU automotive-qualified low-side gate driver designed to meet the growing demands of SiC MOSFET and IGBT control in electric vehicle (EV) powertrain and DC/DC converter applications. According to the company the IX4352NEAU is "the first AEC-Q100-qualified low-side gate driver to offer an integrated and adjustable negative gate drive bias, eliminating the need for an external negative voltage rail or the costly DC/DC converters typically required to suppress parasitic turn-on of high-speed power devices". It offers an adjustable negative gate drive bias (down to -10 V) which Improves dv/dt immunity, suppresses parasitic turn-on, and ensures faster turn-off of SiC MOSFETs and IGBTs. Furthermore, it offers 9 A peak source and sink drive capability (separate pins), integrated protections and 3.3 V TTL/CMOS-compatible inputs. The devices are AEC-Q100 qualified. | 14.10.2025 10:30:00 | Oct | news_2025-11-01_15.jpg | \images\news_2025-11-01_15.jpg | https://www.littelfuse.com/company/news-and-events/in-the-news/newspages-articles/press-releases/2025/new-littelfuse-gate-driver-simplifies-sic-and-igbt-designs-with-integrated-adjustable-negative-bias | littelfuse.com |
| Web-Based Tools for Power Design | Analog Devices launched ADI Power Studio, a compre... | 12586 | Industry News | Web-Based Tools for Power Design | Analog Devices launched ADI Power Studio, a comprehensive family of products that offers modeling, component recommendations and efficiency analysis with simulation. In addition, ADI is introducing two web-based tools with a modernized user experience under the Power Studio umbrella: ADI Power Studio Planner and ADI Power Studio Designer. These new tools, together with the full ADI Power Studio portfolio, including LTspice®, SIMPLIS®, LTpowerCAD®, LTpowerPlanner®, EE-Sim®, LTpowerPlay® and LTpowerAnalyzer™, streamline the entire power system design process. The Power Studio tools support engineers from initial concept through measurement and evaluation, empowering engineers to design with confidence and efficiency. ADI Power Studio Planner is a web-based tool for system-level power tree planning, which gives engineers an interactive view of their system architecture. ADI Power Studio Designer is also a web-based tool, however, for IC-level power supply design. It provides component recommendations, performance estimates, and tailored efficiency analysis. These tools represent the first phase of ADI’s vision to deliver a fully connected power design workflow for customers. | 14.10.2025 08:00:00 | Oct | news_2025-11-01_3.png | \images\news_2025-11-01_3.png | https://www.analog.com/en/newsroom/press-releases/2025/10-14-2025-adi-launches-adi-power-studio-new-web-based-tools.html | analog.com |
| GaN Partnership | Cambridge GaN Devices (CGD), a fabless semiconduct... | 12592 | Industry News | GaN Partnership | Cambridge GaN Devices (CGD), a fabless semiconductor company, is working with GlobalFoundries (GF), a semiconductor manufacturer. The partnership follows CGD’s fabless strategy, expanding the supply chain for the company’s ICeGaN® power devices. CGD’s single-chip technology runs with standard Si MOSFET drivers and is built using a standard Si CMOS wafer fab process. This means that there is no need for a specialist process in the wafer fab. ICeGaN IP is design rather than process-based so is fab agnostic meaning it is easily transferrable to new foundries. Furthermore, the CGD design flow has been built on years of experience in GaN technology and enables fab process porting through a proven methodology. Advanced machine learning algorithms are applied to proprietary test chip characterisation data to refine the models. | 13.10.2025 14:00:00 | Oct | news_2025-11-01_9.jpg | \images\news_2025-11-01_9.jpg | https://camgandevices.com/en/p/cgd-partners-with-globalfoundries-to-supply-single-chip-reliable-and-efficient-icegan-power-devices/ | camgandevices.com |
| 1700 V GaN Technology for Next-Generation 800 VDC AI Data Centers | Power Integrations outlined the benefits of its Po... | 12601 | Product Release | 1700 V GaN Technology for Next-Generation 800 V<sub>DC</sub> AI Data Centers | Power Integrations outlined the benefits of its PowiGaN™ gallium-nitride technology for next-generation AI data centers. The capabilities of 1250 V and 1700 V PowiGaN technology for 800 V<sub>DC</sub> power architectures are explained in a white paper. This paper details the performance advantages of Power Integrations’ 1250 V PowiGaN HEMTs, illustrating their field-proven reliability and their ability to meet the power-density and efficiency requirements (>98 %) of the 800 V<sub>DC</sub> architecture. Further, the paper demonstrates that a single 1250 V PowiGaN switch delivers greater power density and efficiency compared to stacked 650 V GaN FETs and competing 1200 V SiC devices. | 13.10.2025 13:30:00 | Oct | news_2025-11-01_18.jpg | \images\news_2025-11-01_18.jpg | https://investors.power.com/news/news-details/2025/Power-Integrations-Details-1250-V-and-1700-V-PowiGaN-Technology-for-Next-Generation-800-VDC-AI-Data-Centers/default.aspx | power.com |
| 800 V Direct Current AI Data Center Power Architecture with GaN Devices | Renesas Electronics supports efficient power conve... | 12600 | Product Release | 800 V Direct Current AI Data Center Power Architecture with GaN Devices | Renesas Electronics supports efficient power conversion and distribution for the 800 V Direct Current power architecture announced by NVIDIA. Renesas’ GaN based power solutions are especially suited for the task, supporting dense DC/DC power conversion with operating voltages of 48 V to as high as 400 V, with the option to stack up to 800 V. Based on the LLC Direct Current Transformer (LLC DCX) topology, these converters achieve up to 98 percent efficiency. For the AC/DC front-end, Renesas uses bi-directional GaN switches to simplify rectifier designs and increase power density. Renesas REXFET MOSFETs, drivers and controllers complement the BOM of the DC/DC converters. | 13.10.2025 12:30:00 | Oct | news_2025-11-01_17.jpg | \images\news_2025-11-01_17.jpg | https://www.renesas.com/en/about/newsroom/renesas-powers-800-volt-direct-current-ai-data-center-architecture-next-generation-power | renesas.com |
| White Paper on Power Solutions for Next-Generation 800 VDC Architecture | ROHM has released a white paper detailing power so... | 12590 | Industry News | White Paper on Power Solutions for Next-Generation 800 V<sub>DC</sub> Architecture | ROHM has released a white paper detailing power solutions for AI data centers based on the 800 V<sub>DC</sub> architecture. The paper outlines power strategies that support large-scale 800 V<sub>DC</sub> power distribution across AI infrastructure. Included in the white paper are ROHM’s power solutions, supported by thermal design simulations, board-level design strategies, and real-world implementation examples. Key highlights of the white paper are rising rack power consumption, the shift to 800 V<sub>DC</sub>, the redefined power conversion, the essential role of SiC and GaN, optimized conversion topologies as well as breakthrough device technologies. | 13.10.2025 12:00:00 | Oct | news_2025-11-01_7.jpg | \images\news_2025-11-01_7.jpg | https://www.rohm.com/news-detail?news-title=2025-10-14_news_white-paper&defaultGroupId=false | rohm.com |
| Power-Management Solutions for scalable AI Infrastructures | Texas Instruments (TI) debuted design resources an... | 12599 | Product Release | Power-Management Solutions for scalable AI Infrastructures | Texas Instruments (TI) debuted design resources and power-management chips to help companies meet growing artificial intelligence (AI) computing demands and scale power-management architectures from 12 V to 48 V to 800 V<sub>DC</sub>. A typical example is a reference design for a 30 kW AI server power-supply unit featuring a three-phase, three-level flying capacitor power factor correction converter paired with dual delta-delta three-phase inductor-inductor-capacitor converters. Another example is a Gallium-nitride intermediate bus converter capable of delivering up to 1. 6kW of output power in a quarter-brick (58.4 mm by 36.8 mm) form factor based on TI’s LMM104RM0 converter module offering over 97.5 % input-to-output power-conversion efficiency and the possibility for active current sharing between multiple modules. | 13.10.2025 11:30:00 | Oct | news_2025-11-01_16.jpg | \images\news_2025-11-01_16.jpg | https://www.ti.com/about-ti/newsroom/news-releases/2025/tis-new-power-management-solutions-enable-scalable-ai-infrastructures.html | ti.com |
| 800 VDC Power Architecture for AI Data Centers | To address the challenge that future AI factory da... | 12594 | Product Release | 800 V<sub>DC</sub> Power Architecture for AI Data Centers | To address the challenge that future AI factory data centers will require megawatt-scale rack power delivery systems, EPC has developed a low-profile GaN-based, 6 kW 800 V-to-12.5 V converter based on an Input Series Output Parallel (ISOP) topology. This solution provides a higher power density than previous solutions as it occupies under 5,000 mm² and 8 mm in height, making it well-suited for space-constrained AI boards.It efficiently converts 800 V<sub>DC</sub> to 12.5 V<sub>DC</sub> close to the load, reducing bussing losses and improving system-level efficiency. By moving from AC directly to 800 V<sub>DC</sub> at the rack level, and then stepping down to 12.5 V at the board, EPC’s GaN-based solution eliminates unnecessary conversion stages and enables the scalability, simplicity, and energy optimization demanded by tomorrow’s AI data centers. | 13.10.2025 06:30:00 | Oct | news_2025-11-01_11.jpg | \images\news_2025-11-01_11.jpg | https://epc-co.com/epc/about-epc/events-and-news/news/artmid/1627/articleid/3241/epc-800-vdc-power-architecture-for-ai-data-centers | epc-co.com |
| Devices for 800 VDC Power Architecture | Alpha and Omega Semiconductor (AOS) announced supp... | 12611 | Product Release | Devices for 800 V<sub>DC</sub> Power Architecture | Alpha and Omega Semiconductor (AOS) announced support for the power requirements of the 800 V<sub>DC</sub> architecture announced by NVIDIA. The shift from traditional 54 V power distribution to an 800 V<sub>DC</sub> system is a fundamental change in data center design, aimed at overcoming the physical limits of existing infrastructure. This paradigm shift requires advanced power semiconductors, particularly Silicon Carbide (SiC) and Gallium Nitride (GaN), to handle the higher voltages and frequencies with maximum efficiency. In terms of High-Voltage Conversion AOS’ SiC devices, including the Gen3 AOM020V120X3 or topside cooled AOGT020V120X2Q, fit either the power sidecar configuration or the single-step conversion of 13.8 kV AC grid power directly to 800 V<sub>DC</sub> at the data center perimeter. This simplifies the power chain and enhances overall system efficiency. In High-Density DC/DC Conversion within the racks, AOS’ 650V GaN FETs, like the upcoming AOGT035V65GA1, and the 100 V GaN FETs like AOFG018V10GA1 provide the required density essential for converting the 800 V<sub>DC</sub> power to the lower voltages needed by GPUs. Their high-frequency switching capabilities allow for smaller, lighter converters, freeing up valuable space. Furthermore, AOS offers multi-rail 16-phase controllers for the 54 V to 12 V and further downstream conversion stages to the AI SoC. | 13.10.2025 06:30:00 | Oct | news_2025-11-15_8.jpg | \images\news_2025-11-15_8.jpg | https://www.aosmd.com/news/alpha-and-omega-semiconductor-supports-800-vdc-power-architecture-next-generation-ai-factories | aosmd.com |
| Schottky Barrier Diode combining low VF and IR | ROHM has developed a Schottky barrier diode that o... | 12602 | Product Release | Schottky Barrier Diode combining low V<sub>F</sub> and I<sub>R</sub> | ROHM has developed a Schottky barrier diode that overcomes the traditional V<sub>F</sub> / I<sub>R</sub> trade-off. This way, it delivers high reliability protection. The RBE01VYM6AFH represents the concept of leveraging the low-V<sub>F</sub> characteristics of rectification SBDs for protection purposes. By adopting a proprietary architecture, ROHM has achieved low I<sub>R</sub> that is typically difficult to realize with low V<sub>F</sub> designs. As a result, even under harsh environmental conditions, the device meets market requirements by delivering V<sub>F</sub> of less than 300 mV (at I<sub>F</sub>=7.5 mA even at Ta = -40 °C), and an I<sub>R</sub> of less than 20 mA (at V<sub>R</sub> = 3 V even at Ta = 125 °C). These exceptional characteristics not only prevent circuit damage caused by high photovoltaic voltage generated when powered OFF, but also significantly reduce the risk of thermal runaway and malfunction during operation. The AEC-Q101 qualified diode is housed in a compact flat-lead SOD-323HE package (2.5 mm × 1.4 mm) that offers both space efficiency and excellent mountability. | 12.10.2025 14:30:00 | Oct | news_2025-11-01_19.jpg | \images\news_2025-11-01_19.jpg | https://www.rohm.com/news-detail?news-title=2025-10-23_news_sbd&defaultGroupId=false | rohm.com |
| Supporting Wide Bandgap R&D | The Microtest Group, a manufacturer of test system... | 12596 | Product Release | Supporting Wide Bandgap R&D | The Microtest Group, a manufacturer of test systems and testing of chips on packages and silicon wafers, launched two turnkey platforms for power device characterization: Quasar<sup>200</sup> and Pulsar<sup>600</sup>. Developed by ipTEST, Microtest’s UK subsidiary, the two platforms are claimed to "set a new benchmark in precision testing". Quasar<sup>200</sup> and Pulsar<sup>600</sup> are designed for academic researchers and engineers developing new semiconductor products. With a plug-and-play approach, they simplify experimental workflows by eliminating the need for custom equipment and reducing manual operations such as soldering and complex test setups. This enables users to obtain accurate, publication-ready results with traceable precision. They speed up datasheet generation, facilitate correlation with production testers, and ensure safe validation of next-generation devices. Quasar<sup>200</sup> is suitable for evaluating Si, GaN, and SiC devices. Its counterpart, Pulsar<sup>600</sup>, extends these capabilities to ultra-high current applications, well-suited for testing SiC inverters and automotive systems, supporting short-circuit tests up to 1,000 A<sub>DC</sub> and more than 10,000 A<sub>AC</sub>. Both platforms offer up to ±0.1% measurement accuracy across all voltage and current waveforms, with typical parasitic inductance below 30 nH in AC tests. UKAS (United Kingdom Accreditation Service)-traceable calibration and comprehensive audit logs ensure reliability, consistency, and compliance from lab benches to production lines. | 11.10.2025 08:30:00 | Oct | news_2025-11-01_13.jpg | \images\news_2025-11-01_13.jpg | https://www.microtest.net/the-microtest-group-simplifies-wbg-semiconductor-testing-for-labs-and-engineers-introducing-the-plug-and-play-quasar200-and-pulsar600/ | microtest.net |
| DC Power Analyzer | The IT2705 DC Power Analyzer is a highly integrate... | 12583 | Product Release | DC Power Analyzer | The IT2705 DC Power Analyzer is a highly integrated modular DC power analyzer designed for dynamic power consumption measurement, battery simulation, and power characterization. It combines DC power, electronic loads and arbitrary waveform generator with an intuitive GUI, supports Oscilloscope Sampling and Data Logging function, allowing for the creation of complex testing without the need for secondary development. Four current ranges with seamless auto-ranging enable accurate analysis of transient current changes from low-power sleep mode to active operation. Oscilloscope sampling rate up to 200 kHz ensures precise capture of microsecond-level parameter variations. It can be applied for testing IoT devices, chips, automotive electronics, smart wearable devices,etc, helping engineers deeply analyze dynamic waveforms, instant responses, and key electrical characteristics, improving testing efficiency and accuracy. | 10.10.2025 16:30:00 | Oct | news_2025-10-15_20.png | \images\news_2025-10-15_20.png | https://www.itechate.com/en/news/IT2705.html | itechate.com |